KR930011112A - How to Form Aluminum Wiring - Google Patents
How to Form Aluminum Wiring Download PDFInfo
- Publication number
- KR930011112A KR930011112A KR1019910019935A KR910019935A KR930011112A KR 930011112 A KR930011112 A KR 930011112A KR 1019910019935 A KR1019910019935 A KR 1019910019935A KR 910019935 A KR910019935 A KR 910019935A KR 930011112 A KR930011112 A KR 930011112A
- Authority
- KR
- South Korea
- Prior art keywords
- aluminum
- forming
- insulating layer
- layer
- wiring
- Prior art date
Links
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract 2
- 238000005530 etching Methods 0.000 claims abstract 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052760 oxygen Inorganic materials 0.000 claims abstract 2
- 239000001301 oxygen Substances 0.000 claims abstract 2
- 239000000758 substrate Substances 0.000 claims abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 반도체 제조 공정중 금속배선(Interconnection)에 관한 것으로 특히, 알루미늄을 국부 산화시키는 방식을 사용하는 알루미늄 배선 방법에 적당하도록 하는 반도체 제조 공정에 관한 것이다. 이를 위하여 본 발명에서는 알루미늄 배선 형성방법에 있어서, 반도체기판의 절연층 위에, 1차 메탈층으로 알루미늄을 증착시키고 금속배선이 형성될 부분에 PR을 입히고 나머지 부분에 산소를 이온주입하여 산화알루미늄(Al2O3)절연부를 형성하는단계(a)와, 그위에 절연층을 형성하고, 소정부분의 절연층을 식각하여 알루미늄 층위에 VIA홀을 만든 후 2차 메탈층을 형성하는 단계(b)를 포함하는 알루미늄 배선 형성 방법.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to metal interconnections during semiconductor manufacturing processes, and more particularly to semiconductor manufacturing processes suitable for aluminum wiring methods using a method of locally oxidizing aluminum. To this end, in the present invention, in the aluminum wiring forming method, aluminum is deposited on the insulating layer of the semiconductor substrate as a primary metal layer, PR is applied to a portion where the metal wiring is to be formed, and oxygen is ion-implanted into the remaining portion of the aluminum oxide (Al 2 O 3 ) forming an insulating part (a), forming an insulating layer thereon, etching a predetermined portion of the insulating layer to form a VIA hole on the aluminum layer, and then forming a secondary metal layer (b). Aluminum wiring formation method containing.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 본 발명의 금속 배선 공정도.2 is a metal wiring process diagram of the present invention.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910019935A KR950010038B1 (en) | 1991-11-11 | 1991-11-11 | Aluminium metalizing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910019935A KR950010038B1 (en) | 1991-11-11 | 1991-11-11 | Aluminium metalizing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR930011112A true KR930011112A (en) | 1993-06-23 |
| KR950010038B1 KR950010038B1 (en) | 1995-09-06 |
Family
ID=19322558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019910019935A KR950010038B1 (en) | 1991-11-11 | 1991-11-11 | Aluminium metalizing method |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR950010038B1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6268284B1 (en) * | 1998-10-07 | 2001-07-31 | Tokyo Electron Limited | In situ titanium aluminide deposit in high aspect ratio features |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100624461B1 (en) * | 2005-02-25 | 2006-09-19 | 삼성전자주식회사 | Nano wire and manfacturing methof for the same |
-
1991
- 1991-11-11 KR KR1019910019935A patent/KR950010038B1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6268284B1 (en) * | 1998-10-07 | 2001-07-31 | Tokyo Electron Limited | In situ titanium aluminide deposit in high aspect ratio features |
Also Published As
| Publication number | Publication date |
|---|---|
| KR950010038B1 (en) | 1995-09-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| AMND | Amendment | ||
| E601 | Decision to refuse application | ||
| J2X1 | Appeal (before the patent court) |
Free format text: APPEAL AGAINST DECISION TO DECLINE REFUSAL |
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| G160 | Decision to publish patent application | ||
| B701 | Decision to grant | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20100825 Year of fee payment: 16 |
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| LAPS | Lapse due to unpaid annual fee |