KR930005081B1 - 반도체장치 - Google Patents
반도체장치 Download PDFInfo
- Publication number
- KR930005081B1 KR930005081B1 KR1019900005484A KR900005484A KR930005081B1 KR 930005081 B1 KR930005081 B1 KR 930005081B1 KR 1019900005484 A KR1019900005484 A KR 1019900005484A KR 900005484 A KR900005484 A KR 900005484A KR 930005081 B1 KR930005081 B1 KR 930005081B1
- Authority
- KR
- South Korea
- Prior art keywords
- insulating layer
- silicon
- layer
- silicon oxide
- hole
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 46
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 35
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 33
- 239000010703 silicon Substances 0.000 claims description 33
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 21
- 238000009792 diffusion process Methods 0.000 claims description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 17
- 238000009413 insulation Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 114
- 238000000034 method Methods 0.000 description 17
- 239000011229 interlayer Substances 0.000 description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 11
- 229910052698 phosphorus Inorganic materials 0.000 description 11
- 239000011574 phosphorus Substances 0.000 description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 9
- 229910052796 boron Inorganic materials 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- 229910001385 heavy metal Inorganic materials 0.000 description 7
- 239000005380 borophosphosilicate glass Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1099265A JP2659798B2 (ja) | 1989-04-19 | 1989-04-19 | 半導体装置 |
| JP1-99265 | 1989-04-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR900017200A KR900017200A (ko) | 1990-11-15 |
| KR930005081B1 true KR930005081B1 (ko) | 1993-06-15 |
Family
ID=14242866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019900005484A KR930005081B1 (ko) | 1989-04-19 | 1990-04-19 | 반도체장치 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2659798B2 (ja) |
| KR (1) | KR930005081B1 (ja) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57136366A (en) * | 1982-01-11 | 1982-08-23 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS604258A (ja) * | 1983-06-23 | 1985-01-10 | Nec Corp | 半導体装置の構造 |
| JPS60123061A (ja) * | 1983-12-07 | 1985-07-01 | Matsushita Electronics Corp | 半導体装置 |
-
1989
- 1989-04-19 JP JP1099265A patent/JP2659798B2/ja not_active Expired - Fee Related
-
1990
- 1990-04-19 KR KR1019900005484A patent/KR930005081B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR900017200A (ko) | 1990-11-15 |
| JP2659798B2 (ja) | 1997-09-30 |
| JPH02278769A (ja) | 1990-11-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20030530 Year of fee payment: 11 |
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| LAPS | Lapse due to unpaid annual fee |