KR930003554B1 - 과전류 방지형 다이오드 - Google Patents

과전류 방지형 다이오드 Download PDF

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Publication number
KR930003554B1
KR930003554B1 KR1019890015081A KR890015081A KR930003554B1 KR 930003554 B1 KR930003554 B1 KR 930003554B1 KR 1019890015081 A KR1019890015081 A KR 1019890015081A KR 890015081 A KR890015081 A KR 890015081A KR 930003554 B1 KR930003554 B1 KR 930003554B1
Authority
KR
South Korea
Prior art keywords
diode
chip
lead
bonding
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019890015081A
Other languages
English (en)
Korean (ko)
Other versions
KR900007113A (ko
Inventor
요시오 구리따
가쯔히로 다까미
겐지 다나까
유지 고스미
Original Assignee
로옴 가부시끼가이샤
사또 겐이찌로
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 로옴 가부시끼가이샤, 사또 겐이찌로 filed Critical 로옴 가부시끼가이샤
Publication of KR900007113A publication Critical patent/KR900007113A/ko
Application granted granted Critical
Publication of KR930003554B1 publication Critical patent/KR930003554B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02—Details
    • H01H85/04—Fuses, i.e. expendable parts of the protective device, e.g. cartridges
    • H01H85/041—Fuses, i.e. expendable parts of the protective device, e.g. cartridges characterised by the type
    • H01H85/0411—Miniature fuses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/0013—Means for preventing damage, e.g. by ambient influences to the fuse
    • H01H85/0021—Means for preventing damage, e.g. by ambient influences to the fuse water or dustproof devices
    • H01H2085/0034—Means for preventing damage, e.g. by ambient influences to the fuse water or dustproof devices with molded casings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02—Details
    • H01H85/0241—Structural association of a fuse and another component or apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Fuses (AREA)
KR1019890015081A 1983-10-20 1989-10-20 과전류 방지형 다이오드 Expired - Fee Related KR930003554B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63-137016(U) 1983-10-20
JP63-137016 1988-10-20
JP1988137016U JPH0627959Y2 (ja) 1988-10-20 1988-10-20 ダイオード

Publications (2)

Publication Number Publication Date
KR900007113A KR900007113A (ko) 1990-05-09
KR930003554B1 true KR930003554B1 (ko) 1993-05-06

Family

ID=15188855

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890015081A Expired - Fee Related KR930003554B1 (ko) 1983-10-20 1989-10-20 과전류 방지형 다이오드

Country Status (5)

Country Link
US (1) US4945398A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0364981B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPH0627959Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR930003554B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE68911644T2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69116976T2 (de) * 1990-10-18 1996-10-02 Sumitomo Electric Industries Schmelzleiter
US5172214A (en) * 1991-02-06 1992-12-15 Motorola, Inc. Leadless semiconductor device and method for making the same
US5225897A (en) * 1991-10-02 1993-07-06 Unitrode Corporation Molded package for semiconductor devices with leadframe locking structure
JP2850606B2 (ja) * 1991-11-25 1999-01-27 富士電機株式会社 トランジスタモジュール
US5528079A (en) * 1991-12-23 1996-06-18 Gi Corporation Hermetic surface mount package for a two terminal semiconductor device
FR2686737A1 (fr) * 1992-01-29 1993-07-30 Sgs Thomson Microelectronics Composant de protection semiconducteur auto-protege.
US5644281A (en) * 1992-04-07 1997-07-01 Rohm Co., Ltd. Electronic component incorporating solder fuse wire
JP3459291B2 (ja) * 1993-09-21 2003-10-20 ローム株式会社 半導体チップを備えた電子部品
JP3238803B2 (ja) * 1993-08-24 2001-12-17 ローム株式会社 面実装型有極性電子部品の基板実装構造
EP0646971B1 (de) * 1993-09-30 1997-03-12 Siemens Aktiengesellschaft Zweipoliges SMT-Miniatur-Gehäuse für Halbleiterbauelemente und Verfahren zu dessen Herstellung
JPH07230934A (ja) * 1994-02-18 1995-08-29 Rohm Co Ltd 電子部品及びその基板実装構造
JPH08242046A (ja) * 1995-03-03 1996-09-17 Rohm Co Ltd 温度ヒューズ付き半導体装置の構造
JP3175609B2 (ja) * 1996-11-19 2001-06-11 日本電気株式会社 チップ型電子部品
KR100251528B1 (ko) * 1997-10-22 2000-04-15 김덕중 복수개의 센스 소오스 패드를 구비한 센스 전계효과 트랜지스터
DE19752196C1 (de) * 1997-11-25 1999-02-11 Siemens Ag Halbleiterbauelement mit definiertem Verhalten bei einem Ausfall und Verfahren zur Herstellung eines solchen
JP3194429B2 (ja) 1998-06-02 2001-07-30 オムロン株式会社 過電流遮断構造
US6075288A (en) 1998-06-08 2000-06-13 Micron Technology, Inc. Semiconductor package having interlocking heat sinks and method of fabrication
JP3842444B2 (ja) * 1998-07-24 2006-11-08 富士通株式会社 半導体装置の製造方法
US6501634B1 (en) 1999-06-17 2002-12-31 Douglas P. Hubbell High voltage transient voltage surge suppression fuse link system
DE10007209A1 (de) 2000-02-17 2001-09-06 Bosch Gmbh Robert Halbleiter-Leistungsbauelement mit Schmelzsicherung
JP2001237358A (ja) * 2000-02-21 2001-08-31 Rohm Co Ltd パッケージ型二端子半導体装置の構造
US6507264B1 (en) 2000-08-28 2003-01-14 Littelfuse, Inc. Integral fuse for use in semiconductor packages
US6734536B2 (en) * 2001-01-12 2004-05-11 Rohm Co., Ltd. Surface-mounting semiconductor device and method of making the same
JP4433629B2 (ja) * 2001-03-13 2010-03-17 株式会社日立製作所 半導体装置及びその製造方法
CN103972264A (zh) * 2013-01-25 2014-08-06 财团法人工业技术研究院 可挠性电子装置
US20150380353A1 (en) * 2013-02-12 2015-12-31 Freescale Semiconductor, Inc. Method of fabricating an integrated circuit device, and an integrated circuit device therefrom
ITTO20150230A1 (it) * 2015-04-24 2016-10-24 St Microelectronics Srl Procedimento per produrre componenti elettronici, componente e prodotto informatico corrispondenti
JP6660278B2 (ja) * 2016-10-26 2020-03-11 三菱電機株式会社 樹脂封止型半導体装置
JP6804421B2 (ja) * 2017-10-06 2020-12-23 三菱電機株式会社 半導体装置
CN112420676A (zh) * 2020-11-14 2021-02-26 陕西航空电气有限责任公司 一种用于航空发电机的具有短路保护功能的旋转整流二极管
KR102706879B1 (ko) * 2021-12-24 2024-09-13 주식회사 유라코퍼레이션 Pcb기판

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3693048A (en) * 1970-10-19 1972-09-19 Gen Motors Corp Fail open semiconductors
US3839660A (en) * 1973-02-05 1974-10-01 Gen Motors Corp Power semiconductor device package
US3832606A (en) * 1973-02-15 1974-08-27 Gen Motors Corp Semiconductor diode package with protection fuse
JPS5393781A (en) * 1977-01-27 1978-08-17 Toshiba Corp Semiconductor device
DE3033323A1 (de) * 1979-09-11 1981-03-26 Rohm Co. Ltd., Kyoto Schutzvorrichtung fuer eine halbleitervorrichtung
US4574297A (en) * 1981-07-15 1986-03-04 Rohm Company Limited Encapsulated semiconductor with terminals having tabs to increase solder wetting
FR2525392A1 (fr) * 1982-04-19 1983-10-21 Inst Elektrodinamiki Akademii Transistor de puissance du type comportant un nombre n de structures fonctionnelles branchees en parallele
US4554574A (en) * 1983-08-04 1985-11-19 Associated Equipment Corporation Rectifier assembly for parallel connection of diodes
US4829403A (en) * 1987-01-20 1989-05-09 Harding Ade Yemi S K Packaging arrangement for energy dissipating devices
JP2593471B2 (ja) * 1987-03-11 1997-03-26 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
EP0364981A3 (en) 1991-01-16
JPH0627959Y2 (ja) 1994-07-27
KR900007113A (ko) 1990-05-09
US4945398A (en) 1990-07-31
EP0364981A2 (en) 1990-04-25
DE68911644D1 (de) 1994-02-03
DE68911644T2 (de) 1994-04-07
JPH0258345U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-04-26
EP0364981B1 (en) 1993-12-22

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