KR920013773A - S / D device manufacturing method using selective epitaxy - Google Patents

S / D device manufacturing method using selective epitaxy Download PDF

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Publication number
KR920013773A
KR920013773A KR1019900022472A KR900022472A KR920013773A KR 920013773 A KR920013773 A KR 920013773A KR 1019900022472 A KR1019900022472 A KR 1019900022472A KR 900022472 A KR900022472 A KR 900022472A KR 920013773 A KR920013773 A KR 920013773A
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KR
South Korea
Prior art keywords
selective epitaxy
device manufacturing
epitaxy
regions
oxide film
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Application number
KR1019900022472A
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Korean (ko)
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KR940004263B1 (en
Inventor
신형선
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문정환
금성일렉트론 주식회사
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Priority to KR1019900022472A priority Critical patent/KR940004263B1/en
Publication of KR920013773A publication Critical patent/KR920013773A/en
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Publication of KR940004263B1 publication Critical patent/KR940004263B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

내용 없음No content

Description

선택 에피택시를 이용한 S/D소자 제조방법S / D device manufacturing method using selective epitaxy

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 따른 S/D소자 제조 공정도2 is a process chart of manufacturing S / D device according to the present invention

Claims (1)

게이트 옥사이드(Gate Oxide)다결정 실리콘 산화막으로 구성된 게이트를 패터닝(Patterning)하고, 10-18㎝-3정도의 n영역을 임플랜드(Implant)로 형성하고, 산화막을 이용하여 싸이드웰(Side Wall)을 형성하고,RTP를 이용한 선택에피택시로10-16㎝-3정도의 n-영역을 배어실리콘(Bare Silicon)이 오픈된 S/D부분에만 형성하고, 산화막을 이용하여 싸이드웰을 형성한 다음에 10-20㎝-3정도의 n+영역을 임플랜테이션(Zmplantation)하여 형성하고 n영역과 만나도록하여 구성된 것을 특징으로 하는 선택 에피텍시를 이용한 S/D소자 제조방법.Gate oxide Patterned gates made of polycrystalline silicon oxide film, n-regions of about 10 -18 cm -3 are formed with implants, and sidewalls are formed using oxide films. After forming n-regions of about 10 -16 cm -3 by selective epitaxy using RTP, only the S / D portions in which bare silicon is opened are formed, and a side well is formed using an oxide film. 10 -20 ㎝ -3 degrees of the n + implantation zone (Zmplantation) to form and process for producing S / D device using the selected epitaxy, characterized in that is configured so as to meet with the region n. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900022472A 1990-12-29 1990-12-29 Manufacturing method of semiconductor using selective epitexy KR940004263B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900022472A KR940004263B1 (en) 1990-12-29 1990-12-29 Manufacturing method of semiconductor using selective epitexy

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900022472A KR940004263B1 (en) 1990-12-29 1990-12-29 Manufacturing method of semiconductor using selective epitexy

Publications (2)

Publication Number Publication Date
KR920013773A true KR920013773A (en) 1992-07-29
KR940004263B1 KR940004263B1 (en) 1994-05-19

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ID=19308974

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900022472A KR940004263B1 (en) 1990-12-29 1990-12-29 Manufacturing method of semiconductor using selective epitexy

Country Status (1)

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KR (1) KR940004263B1 (en)

Also Published As

Publication number Publication date
KR940004263B1 (en) 1994-05-19

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