KR920015611A - CMOS manufacturing method - Google Patents

CMOS manufacturing method Download PDF

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Publication number
KR920015611A
KR920015611A KR1019910000709A KR910000709A KR920015611A KR 920015611 A KR920015611 A KR 920015611A KR 1019910000709 A KR1019910000709 A KR 1019910000709A KR 910000709 A KR910000709 A KR 910000709A KR 920015611 A KR920015611 A KR 920015611A
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KR
South Korea
Prior art keywords
oxide film
forming
field oxide
polysilicon film
film
Prior art date
Application number
KR1019910000709A
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Korean (ko)
Other versions
KR0166795B1 (en
Inventor
김남용
이원기
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019910000709A priority Critical patent/KR0166795B1/en
Publication of KR920015611A publication Critical patent/KR920015611A/en
Application granted granted Critical
Publication of KR0166795B1 publication Critical patent/KR0166795B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음No content

Description

씨모스 제조방법CMOS manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본발명의 제조공정 단면도.3 is a cross-sectional view of the manufacturing process of the present invention.

Claims (1)

통상의 방법으로 기판상의 일부분에 필드산화막을 형성하는 단계, 상기 필드산화막상에 트랜지스터를 형성하기 위한 폴리실리콘막을 형성하는 단계, 전체적으로 게이트 산화막과 폴리실리콘막을 차례로 증착한 다음 포토/에치공정을 거쳐 기판과 상기 필드산화막위의 폴리실리콘막상에 게이트폴리실리콘막을 형성하는 단계, 기판과 상기 필드산화막위의 폴리실리콘막상에 포토공정 및 소오스/드레인용 이온주입을 실시하여 서로 다른형의 트랜지스터를 형성하는 단계가 차례로 포함됨을 특징으로 하는 씨모스 제조방법.Forming a field oxide film on a portion of the substrate by a conventional method, forming a polysilicon film for forming a transistor on the field oxide film, depositing a gate oxide film and a polysilicon film as a whole, and then performing a photo / etch process And forming a gate polysilicon film on the polysilicon film on the field oxide film, and performing photo-processing and source / drain ion implantation on the substrate and the polysilicon film on the field oxide film to form different types of transistors. CMOS production method characterized in that it is included in sequence. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910000709A 1991-01-17 1991-01-17 Method for manufacturing cmos transistor KR0166795B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910000709A KR0166795B1 (en) 1991-01-17 1991-01-17 Method for manufacturing cmos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910000709A KR0166795B1 (en) 1991-01-17 1991-01-17 Method for manufacturing cmos transistor

Publications (2)

Publication Number Publication Date
KR920015611A true KR920015611A (en) 1992-08-27
KR0166795B1 KR0166795B1 (en) 1999-01-15

Family

ID=19309945

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910000709A KR0166795B1 (en) 1991-01-17 1991-01-17 Method for manufacturing cmos transistor

Country Status (1)

Country Link
KR (1) KR0166795B1 (en)

Also Published As

Publication number Publication date
KR0166795B1 (en) 1999-01-15

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