KR910017671A - Sideol spacer manufacturing method - Google Patents

Sideol spacer manufacturing method Download PDF

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Publication number
KR910017671A
KR910017671A KR1019900002821A KR900002821A KR910017671A KR 910017671 A KR910017671 A KR 910017671A KR 1019900002821 A KR1019900002821 A KR 1019900002821A KR 900002821 A KR900002821 A KR 900002821A KR 910017671 A KR910017671 A KR 910017671A
Authority
KR
South Korea
Prior art keywords
gate
sideol
spacer manufacturing
injecting
source
Prior art date
Application number
KR1019900002821A
Other languages
Korean (ko)
Inventor
김남종
신봉조
김기홍
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019900002821A priority Critical patent/KR910017671A/en
Publication of KR910017671A publication Critical patent/KR910017671A/en

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Abstract

내용 없음No content

Description

사이드올 스페이서 제조방법Sideol spacer manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 2도는 본 발명에 따른 사이드올 스페이서 제조공정도.2 is a process diagram for manufacturing a sideol spacer according to the present invention.

Claims (1)

실리콘 웨이퍼⑴위의 게이트 옥사이드⑵와 게이트 폴리⑶를 순차 중 킨후 SF6+Freon115+CHF3를 혼합한 가스를 주입하는 공정과, 혼합가스를 주입한 후 게이트 폴리를 식각하여 게이트(G)를 형성하는 동시에 게이트벽면에 혼합가스에 의한 폴리머(P)를 형성하고 그 다음에 소오스/드레인 이온주입하여 소오스/드레인(S/D)을 형성하는 공정을 포함하여 이루어진 것을 특징으로 하는 사이드올 스페이서 제조방법.A process of injecting a gas mixed with SF 6 + Freon 115 + CHF 3 after sequentially filling the gate oxide ⑵ and the gate poly ⑴ on the silicon wafer 게이트 and etching the gate poly after injecting the mixed gas to form a gate G And forming a polymer (P) by a mixed gas on the gate wall and then source / drain ion implantation to form a source / drain (S / D). . ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900002821A 1990-03-05 1990-03-05 Sideol spacer manufacturing method KR910017671A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900002821A KR910017671A (en) 1990-03-05 1990-03-05 Sideol spacer manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900002821A KR910017671A (en) 1990-03-05 1990-03-05 Sideol spacer manufacturing method

Publications (1)

Publication Number Publication Date
KR910017671A true KR910017671A (en) 1991-11-05

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ID=67468498

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900002821A KR910017671A (en) 1990-03-05 1990-03-05 Sideol spacer manufacturing method

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KR (1) KR910017671A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100419747B1 (en) * 1996-05-22 2004-07-07 주식회사 하이닉스반도체 Method for forming high voltage transistor to compensate for sidewall of gate oxide layer and avoid side attack in source/drain implantation process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100419747B1 (en) * 1996-05-22 2004-07-07 주식회사 하이닉스반도체 Method for forming high voltage transistor to compensate for sidewall of gate oxide layer and avoid side attack in source/drain implantation process

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E902 Notification of reason for refusal
E601 Decision to refuse application