KR910017671A - Sideol spacer manufacturing method - Google Patents
Sideol spacer manufacturing method Download PDFInfo
- Publication number
- KR910017671A KR910017671A KR1019900002821A KR900002821A KR910017671A KR 910017671 A KR910017671 A KR 910017671A KR 1019900002821 A KR1019900002821 A KR 1019900002821A KR 900002821 A KR900002821 A KR 900002821A KR 910017671 A KR910017671 A KR 910017671A
- Authority
- KR
- South Korea
- Prior art keywords
- gate
- sideol
- spacer manufacturing
- injecting
- source
- Prior art date
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- Drying Of Semiconductors (AREA)
Abstract
내용 없음No content
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제 2도는 본 발명에 따른 사이드올 스페이서 제조공정도.2 is a process diagram for manufacturing a sideol spacer according to the present invention.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900002821A KR910017671A (en) | 1990-03-05 | 1990-03-05 | Sideol spacer manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900002821A KR910017671A (en) | 1990-03-05 | 1990-03-05 | Sideol spacer manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
KR910017671A true KR910017671A (en) | 1991-11-05 |
Family
ID=67468498
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900002821A KR910017671A (en) | 1990-03-05 | 1990-03-05 | Sideol spacer manufacturing method |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR910017671A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100419747B1 (en) * | 1996-05-22 | 2004-07-07 | 주식회사 하이닉스반도체 | Method for forming high voltage transistor to compensate for sidewall of gate oxide layer and avoid side attack in source/drain implantation process |
-
1990
- 1990-03-05 KR KR1019900002821A patent/KR910017671A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100419747B1 (en) * | 1996-05-22 | 2004-07-07 | 주식회사 하이닉스반도체 | Method for forming high voltage transistor to compensate for sidewall of gate oxide layer and avoid side attack in source/drain implantation process |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |