KR920013500A - 하이브리드 다층 회로의 비아 캐패시터 구조물 - Google Patents

하이브리드 다층 회로의 비아 캐패시터 구조물 Download PDF

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KR920013500A
KR920013500A KR1019910023098A KR910023098A KR920013500A KR 920013500 A KR920013500 A KR 920013500A KR 1019910023098 A KR1019910023098 A KR 1019910023098A KR 910023098 A KR910023098 A KR 910023098A KR 920013500 A KR920013500 A KR 920013500A
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dielectric
capacitor structure
insulating layers
conductive
conductive means
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KR1019910023098A
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KR950010022B1 (ko
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디. 스미스 할
에프. 맥 클래나한 로버트
에이. 샤피로 앤드류
펠쯔만 조지
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완다 케이. 덴슨-로우
휴우즈 에어크라프트 캄파니
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/02—Mountings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0183—Dielectric layers
    • H05K2201/0187—Dielectric layers with regions of different dielectrics in the same layer, e.g. in a printed capacitor for locally changing the dielectric properties
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
    • H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13—Energy storage using capacitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S174/00—Electricity: conductors and insulators
    • Y10S174/13—High voltage cable, e.g. above 10kv, corona prevention
    • Y10S174/33—Method of cable manufacture, assembly, repair, or splicing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/916—Narrow band gap semiconductor material, <<1ev
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/928—Active solid-state devices, e.g. transistors, solid-state diodes with shorted PN or schottky junction other than emitter junction

Abstract

내용 없음

Description

하이브리드 다층 회로의 비아 캐패시터 구조물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 내지 제3도는 본 발명에 따른 비아 캐패시터 구조물의 예시적인 예를 개략적으로 도시한 단면도, 제7도는 제1도의 캐패시터 구조물을 개략적으로 도시한 부분 분해도로서 캐패시터 구조물의 부품을 도시한 도면.

Claims (9)

  1. 다수의 절연층을 갖고 있는 하이브리드 다층 회로내에 캐패시터 구조물에 있어서, 절연층들 중 하나의 층내에 형성된 비아 내의 유전 비아 충진부, 상기 유전 비아 층진부 위에 놓인 제1도전 수단 및 상기 유전 비아 충진부하부에 놓인 제2 도전 수단을 포함하는 것을 특징으로 하는 캐패시터 구조물.
  2. 제1항에 있어서, 상기 제1및 제2도전 수단 중 한 수단이 도전 트레이스를 포함하는 것을 특징으로 하는 캐패시터 구조물.
  3. 제1항에 있어서, 상기 제1 및 제2도전 수단 중 한 수단이 도전 비아 충진부를 포함하는 것을 특징으로 하는 캐패시터 구조물.
  4. 다수의 절연층을 갖고 있는 하이브리드 다층 회로내의 캐패시터 구조물에 있어서, 하이브리드의 제1 절연층 내에 형성된 비아 내의 제1 유전 비아 충진부, 제2절연층의 비아 내에 형성된 제2 유전 비아 충진부, 상기 제1및 제2절연층 사이에 최소한 1개의 절연층 각각의 유전 영역 및 상기 유전 비아 충진부의 상.하부에 놓인 도전 수단을 포함하는 것을 특징으로 하는 캐패시터 구조물.
  5. 다수의 절연층을 갖고 있는 하이브리드 다충 회로 내의 캐패시터 구조물에 있어서, 인접한 절연층 제1그룹 내의 제1 비아의 제1 그룹의 유전비아 충진부, 인접한 절연층의 제2그룹 내의 제2 비아의 제2 그룹의 유전비아 충진부, 인접한 절연층의 상기 제1 그룹과 인접한 절연층의 상기 제2그룹 사이의 최소한 1개의 절연체 각각의 유전 영역 및 상기 유전 비아 충진부의 상. 하부에 놓인 도전 수단을 포함하는 것을 특징으로 하는 캐패시터 구조물.
  6. 다수의 절연층을 갖고 있는 하이브리드 다충 회로 내의 캐패시터 구조물에 있어서, 각각의 인접한 절연층내에 형성된 각각의 비아 내의 1개 이상의 축 상으로 정렬된 유전 비아 충진부, 상기 1개 이상의 축 상으로 정렬된 유전 비아 충진부 위에 배치된 제1도전 수단 및 상기 1개 이상의 유전 비아 충진부 하부에 배치된 제2도전 수단을 포함하는 것을 특징으로 하는 캐패시터 구조물.
  7. 제6항에 있어서, 상기 제1및 제2도전 수단 중 1개 또는 모두가 도전 비아 충진부를 포함하는 것을 특징으로 하는 캐패시터 구조물.
  8. 제6항에 있어서, 상기 제1및 제2도전 수단 중 1개 또는 모두가 도체 트레이스를 포함하는 것을 특징으로 하는 캐패시터 구조물.
  9. 다수의 절연층을 갖고 있는 하이브리드 다충 회로 내의 캐패시터 구조물에 있어서, 다수의 유전 비아 충진부, 상기 유전비아 충진부의 상. 하부에 놓이고 비아 캐패시터를 형성하기 위해 충진부와 함께 동작하는 다수의 도전 소자 및 하이브리드이 제조 후에 접속부를 형성 할 수 있어서 상기 비아 캐패시터가 요구된 바와 같이 접속되거나 짧아질 수 있는 하이브리드의 영역에 상기 도전 소자 중 한 선택된 소자를 전기적으로 접속하기 위한 다수의 도전 비아 충진부.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910023098A 1990-12-17 1991-12-16 하이브리드 다층 회로의 비아 캐패시터 구조물 KR950010022B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US628,784 1990-12-17
US07/628,784 US5055966A (en) 1990-12-17 1990-12-17 Via capacitors within multi-layer, 3 dimensional structures/substrates

Publications (2)

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KR920013500A true KR920013500A (ko) 1992-07-29
KR950010022B1 KR950010022B1 (ko) 1995-09-04

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US (1) US5055966A (ko)
EP (1) EP0491542B1 (ko)
JP (1) JP2874120B2 (ko)
KR (1) KR950010022B1 (ko)
CA (1) CA2056740C (ko)
DE (1) DE69108365T2 (ko)
DK (1) DK0491542T3 (ko)
ES (1) ES2069837T3 (ko)
MX (1) MX9102574A (ko)

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Publication number Publication date
EP0491542B1 (en) 1995-03-22
US5055966A (en) 1991-10-08
JP2874120B2 (ja) 1999-03-24
EP0491542A1 (en) 1992-06-24
CA2056740C (en) 1996-09-03
MX9102574A (es) 1992-06-01
KR950010022B1 (ko) 1995-09-04
DE69108365T2 (de) 1995-10-05
DE69108365D1 (de) 1995-04-27
ES2069837T3 (es) 1995-05-16
CA2056740A1 (en) 1992-06-18
JPH04299889A (ja) 1992-10-23
DK0491542T3 (da) 1995-06-06

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