KR920010596B1 - Npn 트랜지스터의 래치전압을 이용한 정전내력향상 래터럴 pnp 트랜지스터 - Google Patents

Npn 트랜지스터의 래치전압을 이용한 정전내력향상 래터럴 pnp 트랜지스터 Download PDF

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Publication number
KR920010596B1
KR920010596B1 KR1019890018743A KR890018743A KR920010596B1 KR 920010596 B1 KR920010596 B1 KR 920010596B1 KR 1019890018743 A KR1019890018743 A KR 1019890018743A KR 890018743 A KR890018743 A KR 890018743A KR 920010596 B1 KR920010596 B1 KR 920010596B1
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KR
South Korea
Prior art keywords
emitter
collector
transistor
pnp transistor
base
Prior art date
Application number
KR1019890018743A
Other languages
English (en)
Korean (ko)
Other versions
KR910013586A (ko
Inventor
이호진
Original Assignee
삼성전자 주식회사
김광호
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사, 김광호 filed Critical 삼성전자 주식회사
Priority to KR1019890018743A priority Critical patent/KR920010596B1/ko
Priority to TW079110351A priority patent/TW198136B/zh
Priority to JP2402505A priority patent/JP2597753B2/ja
Priority to DE4040070A priority patent/DE4040070C2/de
Priority to CN90109971A priority patent/CN1020027C/zh
Publication of KR910013586A publication Critical patent/KR910013586A/ko
Priority to US07/860,271 priority patent/US5237198A/en
Application granted granted Critical
Publication of KR920010596B1 publication Critical patent/KR920010596B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019890018743A 1989-12-16 1989-12-16 Npn 트랜지스터의 래치전압을 이용한 정전내력향상 래터럴 pnp 트랜지스터 KR920010596B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1019890018743A KR920010596B1 (ko) 1989-12-16 1989-12-16 Npn 트랜지스터의 래치전압을 이용한 정전내력향상 래터럴 pnp 트랜지스터
TW079110351A TW198136B (ja) 1989-12-16 1990-12-08
JP2402505A JP2597753B2 (ja) 1989-12-16 1990-12-14 Ｎｐｎトランジスターのラッチ電圧を利用した静電耐力向上ラテラルｐｎｐトランジスター
DE4040070A DE4040070C2 (de) 1989-12-16 1990-12-14 PNP-Transistor mit einem Schutzelement zum Schutz vor statischer Elektrizität
CN90109971A CN1020027C (zh) 1989-12-16 1990-12-15 一种利用npn晶体管锁闩电压的横向pnp晶体管
US07/860,271 US5237198A (en) 1989-12-16 1992-04-01 Lateral PNP transistor using a latch voltage of NPN transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890018743A KR920010596B1 (ko) 1989-12-16 1989-12-16 Npn 트랜지스터의 래치전압을 이용한 정전내력향상 래터럴 pnp 트랜지스터

Publications (2)

Publication Number Publication Date
KR910013586A KR910013586A (ko) 1991-08-08
KR920010596B1 true KR920010596B1 (ko) 1992-12-10

Family

ID=19293038

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890018743A KR920010596B1 (ko) 1989-12-16 1989-12-16 Npn 트랜지스터의 래치전압을 이용한 정전내력향상 래터럴 pnp 트랜지스터

Country Status (5)

Country Link
JP (1) JP2597753B2 (ja)
KR (1) KR920010596B1 (ja)
CN (1) CN1020027C (ja)
DE (1) DE4040070C2 (ja)
TW (1) TW198136B (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10343681B4 (de) * 2003-09-18 2007-08-09 Atmel Germany Gmbh Halbleiterstruktur und deren Verwendung, insbesondere zum Begrenzen von Überspannungen
CN102280484B (zh) * 2011-08-06 2015-06-03 深圳市稳先微电子有限公司 一种栅源和栅漏过压保护的晶体管功率器件及其制造方法
JP6077692B1 (ja) * 2016-03-04 2017-02-08 伸興化成株式会社 リサイクル可能な合成樹脂タイル及びその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4291319A (en) * 1976-05-19 1981-09-22 National Semiconductor Corporation Open base bipolar transistor protective device
JPS6068721A (ja) * 1983-09-22 1985-04-19 Fujitsu Ltd Ｅｃｌ回路
JPS60253257A (ja) * 1984-05-29 1985-12-13 Sanyo Electric Co Ltd 半導体集積回路装置
JPS6364058A (ja) * 1986-09-05 1988-03-22 Canon Inc 画像形成装置

Also Published As

Publication number Publication date
CN1020027C (zh) 1993-03-03
KR910013586A (ko) 1991-08-08
DE4040070A1 (de) 1991-06-20
JPH0483374A (ja) 1992-03-17
TW198136B (ja) 1993-01-11
DE4040070C2 (de) 1997-01-23
CN1052573A (zh) 1991-06-26
JP2597753B2 (ja) 1997-04-09

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