KR920007801A - 화학흡착 단분자 누적막 및 그의 제조방법 - Google Patents

화학흡착 단분자 누적막 및 그의 제조방법 Download PDF

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KR920007801A
KR920007801A KR1019910018799A KR910018799A KR920007801A KR 920007801 A KR920007801 A KR 920007801A KR 1019910018799 A KR1019910018799 A KR 1019910018799A KR 910018799 A KR910018799 A KR 910018799A KR 920007801 A KR920007801 A KR 920007801A
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chemisorption
monomolecular film
gas
chlorosilane
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KR950004153B1 (ko
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카즈후미 오가와
노리히사 미노
마모루 소가
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다니이 아끼오
마쯔시다덴기산교 가부시기가이샤
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Priority claimed from JP3024025A external-priority patent/JP2501248B2/ja
Priority claimed from JP3024026A external-priority patent/JPH089510B2/ja
Priority claimed from JP3008321A external-priority patent/JPH0791402B2/ja
Priority claimed from JP3038137A external-priority patent/JPH0798026B2/ja
Application filed by 다니이 아끼오, 마쯔시다덴기산교 가부시기가이샤 filed Critical 다니이 아끼오
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Abstract

내용 없음

Description

화학흡착 단분자 누적막 및 그의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도(a) 내지 제1도(d)는 본 발명의 제1실시예에 있어서의 유기단분자막의 누적방법의 공정을 도시한 개략단면도.
제2도는 본 발명의 제2실시예에 있어서의 유기단분자막의 누적을 도시한 개략단면도.
제3도 내지 제5도는 본 발명의 제3실시예에 있어서의 유기단분자막의 누적방법의 공정을 도시한 개략단면도.
* 도면의 주요 부분에 대한 부호의 설명
1 : 기체 1' : 거울유리표면
2,12 : 수산기 3 : 클로로실란단분자막
4,13 : 실록산단분자막 5,12,14:불소를 함유하는 화학흡착 단분자막
11: 백미러

Claims (10)

  1. 기체표면에 화학결합으로 형성된 실록산계 단분자막과, 이 실록산계 단분자막상에 형성된 화학흡착단분자막으로 이루어진 화학흡착 단분자누적막.
  2. 제l항에 있어서, 상기 화합흡착 단분자막이 불소를 함유하는 것을 특징으로 하는 화학흡착 단분자누적막.
  3. 제1항에 있어서, 상기 기체표면과 실록산계 단분자막이 화학흡착 공유결합으로 형성되고, 실록산계단분자막과 화학흡착 단분자막이 화학흡착 공유결합으로 형성되는 것을 특징으로 하는 화학흡착 단분자누적막.
  4. 제1항에 있어서, 상기 기체가 금속, 세라믹 및 플라스틱으로 이루어진 군으로부터 선택된 부재인 것을 특징으로 하는 화학흡착 단분자누적막.
  5. 표면에 수산기를 함유하는 기체를, 분자중에 클로로실릴기를 함유하는 물질을 포함한 비수계 용매에 접촉시키는 공정과, 상기 기체를 비수계 유기용매를 사용하여 세정해서 반응하지 않고 기체에 남아있던 상기 물질을 제거하는 공정과, 일단부에 각각 클로실란기를 가지는 직쇄형상의 탄화수소분자로 이루어진 클로로실란계 계면활성제를, 상기 단분자막 형성공정후에 상기 기체상에 화학흡착시켜 단분자흡착막을·누적하는 공정을 포함하는 것을 특징으로 하는 화학흡착 단분자누적막의 제조방법.
  6. 제5항에 있어서, 상기 기체가 금속 및 세라믹으로 이루어진 군으로부터 선택된 부재인 것을 특징으로 하는 화학흡착 단분자누적막의 제조방법.
  7. 제5항에 있어서, 상기 기체가, 미리 표면을 산소를 포함하는 플라즈마분위기중에서 처리해서 친수화한 플라스틱 기체인 것을 특징으로 하는 화학흡착 단분자누적막의 제조방법.
  8. 제5항에 있어서, 상기 분자중에 클로로실릴기를 함유하는 SlC14, SiHC13, SiH2Cl2및 C1-(SiCl2O)nSiCI3(n은 정수)로 이루어진 군으로부터 선택된 부재인 것을 특징으로 하는 화학흡착 단분자누적막의제조방법.
  9. 제5항에 있어서, 상기 클로로실란계 계면활성제의 탄화수소사슬이 부분적으로 -CF2-기로 치환되어 있는 것을 특징으로 하는 화학흡착 단분자누적막의 제조방법.
  10. 제 5 항 또는 제 9 항에 있어서, 상기 클로로실란계 계면활성제가, CF3-(CF2)n-(R)m-SiXPC13-P(n은 0 또는 정수, R은 알킬기 또는 C=C, C≡C, 실리콘원자 또는 산소원자를 포함하는 치환기, m은 0 또는 1, X는 수소원자 또는 알킬기, 알콕시기, 불소를 함유한 알킬기 및 불소를 함유한 알콕시기로 이루어진군으로부터 선택된 치환기, P는 0,1 또는 2)인 것을 특징으로 하는 화학흡착 단분자누적막의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910018799A 1990-10-25 1991-10-25 화학흡착 단분자 누적막 및 그의 제조방법 KR950004153B1 (ko)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
JP90-289128 1990-10-25
JP28912890 1990-10-25
JP90-405754 1990-12-25
JP40575490 1990-12-25
JP3024025A JP2501248B2 (ja) 1991-01-23 1991-01-23 単分子コ―ティング物体及びその製造方法
JP3024026A JPH089510B2 (ja) 1991-01-23 1991-01-23 防汚性窯業製品およびその製造方法
JP91-24025 1991-01-23
JP91-24026 1991-01-23
JP91-8321 1991-01-28
JP3008321A JPH0791402B2 (ja) 1991-01-28 1991-01-28 高分子組成物の製造方法
JP91-38137 1991-02-06
JP3038137A JPH0798026B2 (ja) 1991-02-06 1991-02-06 調理器具およびその製造方法

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KR920007801A true KR920007801A (ko) 1992-05-27
KR950004153B1 KR950004153B1 (ko) 1995-04-27

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DE69122212D1 (de) 1996-10-24
CA2054094C (en) 1999-12-21
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