KR920004143A - 고열전도율 복합체 및 그 제조방법과 열전도복합층을 갖는 전자장치 - Google Patents

고열전도율 복합체 및 그 제조방법과 열전도복합층을 갖는 전자장치 Download PDF

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Publication number
KR920004143A
KR920004143A KR1019910014628A KR910014628A KR920004143A KR 920004143 A KR920004143 A KR 920004143A KR 1019910014628 A KR1019910014628 A KR 1019910014628A KR 910014628 A KR910014628 A KR 910014628A KR 920004143 A KR920004143 A KR 920004143A
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South Korea
Prior art keywords
metal substrate
composite
thermal conductivity
electronic device
high thermal
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KR1019910014628A
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English (en)
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수팬 에드워드씨.
에프. 돌로위 제이알 조세프
에이. 웨브 브래들리
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라리 윌리엄 에반스
더 스탠다드 오일 캄파니
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Publication of KR920004143A publication Critical patent/KR920004143A/ko

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732—Diamonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12014—All metal or with adjacent metals having metal particles
    • Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
    • Y10T428/12049—Nonmetal component
    • Y10T428/12056—Entirely inorganic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Manufacture Of Alloys Or Alloy Compounds (AREA)
  • Powder Metallurgy (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)

Abstract

내용 없음

Description

고열전도율 복합체 및 그 제조방법과 열전도복합층을 가는 전자장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (20)

  1. 금속기판; 및 다이아몬드 입자로 이루어지며, 상기 다이아몬드입자는 금소기판용의 보강부를 구성하고 1~50㎛범위의 입자크기를 갖는 고열전도율 복합체.
  2. 제1항에 있어서, 상기 다이아몬드 입자는 복합체의 약 5~80체적 퍼센트의 범위내인 고열전도율 복합체.
  3. 제1항에 있어서, 상기 다이아몬드 입자는 복합체의 약 10~30㎛ 범위내인 고열전도율 복합체.
  4. 제1항에 있어서, 상기 다이아몬드 입자는 약 1~10㎛ 범위내인 고열전도율 복합체.
  5. 제1항에 있어서, 상기 금속기판은 알루미늄의 고열전도율 복합체.
  6. 제1항에 있어서, 상기 금속기판은 마그네슘인 고열전도율 복합체.
  7. 제1항에 있어서, 상기 금속기판은 구리인 고열전도율 복합체.
  8. 제1항에 있어서, 상기 금속기판은 은인 고열전도율 복합체.
  9. 제1항에 있어서, 상기 금속기판은 Al,Ag,Cu,Mg 또는 이들의 합금으로 이루어진 군에서 선택되는 고열전도율 복합체.
  10. 1-50㎛의 입자크기를 갖는 다이아몬드 입자 5~80 체적 퍼센트를 금속분말과 혼합하여 분말 블렌드를 형성하고, 이블렌드를 가압하에 상승된 온도까지 가열하고 상기 분말을 강화하여 복합체를 형성하여 이루어 지는 고열전도율 다이아몬드/금속 복합체 제조방법.
  11. 제10항에 있어서, 상기 블렌드를 가압하에 금속기판을 용융시키기에 충분한 온도까지 가열하여 금속기판을 다이아몬드 입자들간의 공간부에 채우고, 이어서 온도를 낮추어 다이아몬드 입자 부근의 금속기판을 고화시키는 것을 더 포함하는 고열전도율 다이아몬드/금속 복합체 제조방법.
  12. 금속기판과 약 1~50㎛범위의 입자크기를 갖는 다이아몬드 입자로 이루어지는 열전도 복합층을 적어도 일면에 갖는 전자장치.
  13. 제12항에 있어서, 상기 복합층은 5~80체적 페센트의 다이아몬드 입자를 함유하는 전자장치.
  14. 제13항에 있어서, 상기 다이아몬드 입자는 1~40㎛의 입자범위를 갖는 전자장치.
  15. 제14항에 있어서, 상기 다이아몬드 입자는 10~30㎛의 입자범위를 갖는 전자장치.
  16. 제15항에 있어서, 상기 금속기판은 Al,Mg,Cu,,Ag 또는 이들의 합금으로 이루어지는 군에서 선택되는 전자 장치.
  17. 제15항에 있어서, 상기 금속기판은 Al인 전자장치.
  18. 제15항에 있어서, 상기 금속기판은 Mg인 전자장치.
  19. 제15항에 있어서, 상기 금속기판은 Cu인 전자장치.
  20. 제15항에 있어서, 상기 금속기판은 Ag인 전자장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910014628A 1990-08-27 1991-08-23 고열전도율 복합체 및 그 제조방법과 열전도복합층을 갖는 전자장치 KR920004143A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US573,609 1984-01-25
US07/573,609 US5045972A (en) 1990-08-27 1990-08-27 High thermal conductivity metal matrix composite

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KR920004143A true KR920004143A (ko) 1992-03-27

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US (1) US5045972A (ko)
EP (1) EP0475575A1 (ko)
JP (1) JPH04259305A (ko)
KR (1) KR920004143A (ko)
CA (1) CA2048005A1 (ko)

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US5045972A (en) 1991-09-03
CA2048005A1 (en) 1992-02-28
JPH04259305A (ja) 1992-09-14
EP0475575A1 (en) 1992-03-18

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