KR920000677B1 - 열처리 장치 - Google Patents

열처리 장치 Download PDF

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Publication number
KR920000677B1
KR920000677B1 KR1019870013714A KR870013714A KR920000677B1 KR 920000677 B1 KR920000677 B1 KR 920000677B1 KR 1019870013714 A KR1019870013714 A KR 1019870013714A KR 870013714 A KR870013714 A KR 870013714A KR 920000677 B1 KR920000677 B1 KR 920000677B1
Authority
KR
South Korea
Prior art keywords
terminal
substrate
thermocouple
furnace
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019870013714A
Other languages
English (en)
Korean (ko)
Other versions
KR880008425A (ko
Inventor
겡이찌 데라우찌
다께오 오까모도
Original Assignee
다이닛뽕 스크린 세이조오 가부시기가이샤
이시다 도꾸지로
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 다이닛뽕 스크린 세이조오 가부시기가이샤, 이시다 도꾸지로 filed Critical 다이닛뽕 스크린 세이조오 가부시기가이샤
Publication of KR880008425A publication Critical patent/KR880008425A/ko
Application granted granted Critical
Publication of KR920000677B1 publication Critical patent/KR920000677B1/ko
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Chamber type furnaces specially adapted for treating semiconductor wafers

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Control Of Resistance Heating (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1019870013714A 1986-12-11 1987-12-02 열처리 장치 Expired KR920000677B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61296131A JPH0693438B2 (ja) 1986-12-11 1986-12-11 基板温度測定装置
JP61-296131 1986-12-11
JP86-296131 1986-12-11

Publications (2)

Publication Number Publication Date
KR880008425A KR880008425A (ko) 1988-08-31
KR920000677B1 true KR920000677B1 (ko) 1992-01-20

Family

ID=17829543

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870013714A Expired KR920000677B1 (ko) 1986-12-11 1987-12-02 열처리 장치

Country Status (4)

Country Link
US (1) US4820907A (enExample)
JP (1) JPH0693438B2 (enExample)
KR (1) KR920000677B1 (enExample)
DE (1) DE3741436A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01185437A (ja) * 1988-01-20 1989-07-25 Horiba Ltd 真空チャンバの試料加熱装置
JPH0623935B2 (ja) * 1988-02-09 1994-03-30 大日本スクリーン製造株式会社 再現性を高めた熱処理制御方法
DE4007123A1 (de) * 1990-03-07 1991-09-12 Siegfried Dipl Ing Dr Straemke Plasma-behandlungsvorrichtung
JP2704309B2 (ja) * 1990-06-12 1998-01-26 大日本スクリーン製造株式会社 基板処理装置及び基板の熱処理方法
JP2780866B2 (ja) * 1990-10-11 1998-07-30 大日本スクリーン製造 株式会社 光照射加熱基板の温度測定装置
AU692212B2 (en) * 1993-12-17 1998-06-04 Roger S. Cubicciotti Nucleotide-directed assembly of bimolecular and multimolecular drugs and devices
US5471033A (en) * 1994-04-15 1995-11-28 International Business Machines Corporation Process and apparatus for contamination-free processing of semiconductor parts
DE4431608C5 (de) * 1994-09-06 2004-02-05 Aichelin Gmbh Verfahren und Vorrichtung zum Wärmebehandeln metallischer Werkstücke
DE19547601A1 (de) * 1995-12-20 1997-06-26 Sel Alcatel Ag Vorrichtung zum Sintern von porösen Schichten
US5881208A (en) * 1995-12-20 1999-03-09 Sematech, Inc. Heater and temperature sensor array for rapid thermal processing thermal core
US5820266A (en) * 1996-12-10 1998-10-13 Fedak; Tibor J. Travelling thermocouple method & apparatus
JP4739544B2 (ja) * 2001-02-21 2011-08-03 株式会社アルバック インライン式熱処理装置用温度測定装置
US7299148B2 (en) * 2004-07-10 2007-11-20 Onwafer Technologies, Inc. Methods and apparatus for low distortion parameter measurements
JP2006352145A (ja) * 2006-07-06 2006-12-28 Hitachi Kokusai Electric Inc 熱処理装置およびその装置に用いられる温度検出ユニット、半導体装置の製造方法
JP2008139067A (ja) * 2006-11-30 2008-06-19 Dainippon Screen Mfg Co Ltd 温度測定用基板および温度測定システム
PL235229B1 (pl) * 2017-09-29 2020-06-15 Amp Spolka Z Ograniczona Odpowiedzialnoscia Przyłącze termoparowe do pieca próżniowego
WO2025126089A1 (ja) * 2023-12-12 2025-06-19 ニデック エスブイプローブ ピーティーイー リミテッド 測定治具

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2969471A (en) * 1959-10-30 1961-01-24 Wilhelm A Schneider Crystal temperature control device
US3883715A (en) * 1973-12-03 1975-05-13 Sybron Corp Controlled environment module
JPS5925142B2 (ja) * 1977-01-19 1984-06-14 株式会社日立製作所 熱処理装置
US4586006A (en) * 1984-06-25 1986-04-29 Frequency And Time Systems, Inc. Crystal oscillator assembly
US4593258A (en) * 1985-02-13 1986-06-03 Gerald Block Energy conserving apparatus for regulating temperature of monitored device
JPH0741151Y2 (ja) * 1985-02-19 1995-09-20 東芝機械株式会社 マスクガラス等の温度測定機構
US4684783A (en) * 1985-11-06 1987-08-04 Sawtek, Inc. Environmental control apparatus for electrical circuit elements
JP3090787B2 (ja) * 1992-07-16 2000-09-25 富士通株式会社 半導体装置の製造方法
JPH06267813A (ja) * 1993-03-10 1994-09-22 Hitachi Ltd 露光パターン形成装置

Also Published As

Publication number Publication date
JPS63148623A (ja) 1988-06-21
KR880008425A (ko) 1988-08-31
DE3741436C2 (enExample) 1989-12-21
JPH0693438B2 (ja) 1994-11-16
US4820907A (en) 1989-04-11
DE3741436A1 (de) 1988-06-23

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