KR910700210A - 조절된 이론치와 입자크기로된 회티탄석 화합물의 준-마이크론 세라믹 분발 제조방법 - Google Patents

조절된 이론치와 입자크기로된 회티탄석 화합물의 준-마이크론 세라믹 분발 제조방법

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KR910700210A
KR910700210A KR1019900701729A KR900701729A KR910700210A KR 910700210 A KR910700210 A KR 910700210A KR 1019900701729 A KR1019900701729 A KR 1019900701729A KR 900701729 A KR900701729 A KR 900701729A KR 910700210 A KR910700210 A KR 910700210A
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powder
lead
compound
titanate
microns
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윌리암 제이. 다우손
스코트 엘. 스와쯔
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폴 티. 산틸리
바텔 메모리알 인스티튜트
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Abstract

내용 없음.

Description

조절된 이론치와 입자크기로된 회티탄석 화합물의 준―마이크론 세라믹 분말 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 공침 pH와 PZT 분말의 응집크기의 관계로 보여준다.
제4도는 결정체 PZT 분말의 x―선 회절(XRD)패턴을 보여준다.

Claims (45)

  1. 우수한 전기적 특성과 다음의 일반식으로된 회티탄석 화합물로 구성된 고형용액인 단결정의 화학적 균일분말
    ABO3
    여기서 회티탄석 화합물은 지르코산 티탄산납, 티탄산바륨, 지르콘산 티탄산납 란타늄, 티탄산납, 지르콘산납 또는 니오브산납 마그네슘과 종 도판트나 고형 치환물의 0―50%를 포함하는 그룹중에서 선택하고, 또한 지르콘산 티탄산납을 선택할 경우 회티탄석이 다음의 일반식으로 되고,
    Pb(Zr1-XTiX)O3
    여기서 x값이 (1) 0 내지 0.44, (2)0.44 내지 0.55 또한 총 도판트와 고형용액 치환레벨이 0 내지 50몰%, (3) 0.55 내지 1.00, 또한 x의 값이 (1) 또는 (3)인 경우 총도판트와 고형 치환 레벨이 13 내지 50몰%이다.
  2. 제1항에 있어서, 화합물이 지르콘산 티탄산납이고 분말의 소결 온도가 약 1100℃ 이하인 것으로된 분말.
  3. 제1항에 있어서, 화합물이 티탄산 바륨이고 분말의 소결 온도가 1200℃ 이하인 것으로된 분말.
  4. 제1항에 있어서, 분말이 티탄산 바륨이고 이것의 평균 입자 크기가 약 1.0 마아크론 이하인 것으로된 분말.
  5. 제1항에 있어서, 분말이 지르콘산 티탄산납이고 이것의 평균 입자 크기가 약 20 마이크론 이하인 것으로된 분말.
  6. 제1항에 있어서, 분말이 지르콘산 티탄산납이고 회티탄석 화합물에 있는 납의 성분을 Ba, Sr 또는 Ca중에서 선택된 최소한 한원소와 대체하는 것으로된 분말.
  7. 제1항에 있어서, 분말이 지르콘산 티탄산납이고 회티탄석 화합물에 있는 납, 지르코늄 또는 티타늄 성분을 니오븀, 탄탈륨, 프라세오디뮴, 네오디뮴, 프로메륨, 사마륨, 에우로퓸, 가돌리늄, 테르븀, 디스프로슘, 홀븀, 에르븀, 튜륨, 이테르븀, 투테륨, 세륨, 이트륨, 안티몬, 크로뮴, 우라늄, 철, 니켈, 코발트, 아연, 칼륨, 스칸륨, 인듐, 토륨, 텅스텐, 비스무트, 바나듐, 또한 망간중에서 선택한 최소한 한원소와 대체하는 것으로된 분말.
  8. 제1항에 있어서, 분말이 지르콘산 티탄산납이고 분말의 1차결정체 크기분포가 약 0.20 마이크론 내지 약 0.60 마이크론의 범위이며 2차 입자크기 분포는 약 0.4 마이크론 내지 약 2.0 마이크론 범위인 것으로된 분말.
  9. 제1항의 지르콘산 티탄산납 분말의 소결체를 포함하는 압전 변환기.
  10. 제1항의 지르콘산 티탄산납 분말의 소결체를 포함하는 압전 여파기.
  11. 제1항에 있어서, 회티탄석 화합물의 납성분을 La와 Mg중에서 선택된 성분과 대체하는 것으로된 분말.
  12. 제11항의 지르콘산 티탄산납 분말의 소결체를 포함하는 전자 광학장치.
  13. 제1항에 있어서, ABO3화합물이 티탄산 바륨이고 바륨 및 티탄늄 성분을 0 이나 Sr, Pb, Sn, Mg, Ni, Zn, Co, Nd, Zr, Nd, Bi, Sm 또한 La 중에서 하나나 그이상의 원소로 대체하는 것으로된 분말.
  14. 제13항에 따른 분말로 만든 다층 세라믹 축전기.
  15. 제13항에 따른 분말로 만든 입자기처층 축전기.
  16. 제13항에 따른 분말로 만든 PTCR 축전기.
  17. 제1항에 있어서, ABO3화합물이 니오브산 납 마그네슘이고 마그네슘과 니오븀을 0 이나 또는 Ni, Fe, Mn, Zn, Ta, W, Sn, Ti 또한 Zr 중 하나 혹은 그이상의 원소로 부분적 치환하는 것으로된 분말.
  18. 제17항에 따른 분말로 만든 다층 세라믹 축전기.
  19. 제17항에 따른 분말로 만든 전기왜곡성 작동기.
  20. 제17항에 따른 분말로 만든 전자광항장치.
  21. 제1항에 있어서, ABO3화합물이 니오브산 납아연이고 아연과 니오븀을 0 이나 또는 Ni, Mg, Fe, Mn, Ta, W, Sn, Ti 또한 Zr 중의 하나 혹은 그이상의 원소로 부분적 치환하고 또는 납은 0이나 또는 Sr, Ca, Ba 또는 La 중에서 하나나 그이상의 원소로 부분적 치환하는 것으로된 분말.
  22. 제21항에 따른 분말로 만든 다층 세라믹 축전기.
  23. 제21항에 따른 분말로 만든 전기 왜곡성 작동기.
  24. 제1항에 있어서, ABO3화합물이 티탄산납이고 납은 0 이나 또는 Ca, Sm, Nd, La, Ba 또는 Sr 중 하나나 그이상의 원소로 부분치환 하며 또한 Ti는 0이나 또는 W, Ni, Co, Fe, Mn, Sn, Zr, Nb 또는 Ta중에서 하나 혹은 그이상의 원소로 부분치환하는 것으로된 분말.
  25. 제24항에 따른 분말로 만든 압전 변환기 기소나 수중 청음기 기소.
  26. 제1항에 있어서, ABO3화합물이 티탄산납 란타늄 지르코늄 Pb1-xLaxZr1-yTiyO3이고 x값의 범위는 0 내지 0.20 이며 y값의 범위는 0.20 내지 0.44인 것으로된 분말.
  27. 제26항에 따른 분말로 만든 전자광학장치.
  28. a. 하프늄, 지르코늄, 티타늄, 니오븀, 탄탈륨, 우라늄, 철, 안티몸, 란타늄, 비스무트, 토륨, 인듐, 니켈, 망간, 네오디븀, 사마륨, 코발트, 텅스테 또한 주석, 바나듐, 디스프로슘, 프라세오븀, 이트리움, 프로메륨, 에우로퓸, 세튬, 이테르븀, 루테륨, 스칸듐, 가돌리늄, 테르븀, 홀븀, 에르븀, 툴륨, 그로븀, 칼륨 또한 리륨중 선택된 하나나 그이상의 원소를 함유하는 1차 산성용액을 제조하고, b. 1차용액과 혼합할 때 충분한 농도의 수산화물이 들어있는 2차 염기성 용액을 제조하여 예비결정된 pH 값으로 만들고, c. 1차 산성용액을 2차 염기성 용액에 첨가하여 사실상 순수한 수산화 혼합물을 침전시키고, d. 침전물을 세척하여 분말의 잡 또는 다른 구성원소를 용해한 수산화물과 염 불순물을 제거하고, e. 세척된 침전물의 수성 슬러리를 제조하고 여기에 바륨, 스트 론륨, 칼슘, 마그네슘, 납, 아연 이트륨, 마그네슘, 망간, 코발트, 아연 또한 니켈중 선택된 하나나 그이상의 원소의 산화물 혹은 수산화물을 첨가하고, f. 높은 온도의 압력에서 충분한 시간동안 슬러리를 수화열처리하여 분말을 형성하고 또한, g. 이 분말을 건조시키는 것으로 되고 납, 지르코늄 또한 티타늄을 선택할 경우 회티탄석의 일반식이 다음과 같은 것으로된 회티탄석 구조 ABO3의 결정체 세라믹 분말 제조방법.
    Pb(Zr1-xTix)O3
    여기서 x의 값은 (1) 0 내지 0.44, (2)0.44 내지 0.55 또한 총 도판트와 고체용액 치환레벨이 13%이상이고, (3) 0.55 내지 1.00이고, 또한 x의 값이 (1) 또는 (3)인 경우 총도판트와 고체 치환 레벨이 0 내지 50몰%이다.
  29. 제28항에 있어서, 망간, 니켈 또는 코발트를 단계(a)에서 선택할때 수산화암모늄을 선택하기 않은 것을 조건으로 할때 단계(b)의 수산화물을 수산화나트륨, 수산화암모늄, 또한 수산화칼륨 중에서 선택하는 것으로된 방법.
  30. 제28항에 있어서, 또한 pH값을 조절하여 분말의 평균 입자 크기를 선택하는 단계로 포함하는 방법.
  31. 제28항에 있어서, 단계(c)의 pH값을 조절하여 원소를 거의 완전히 함유하는 것으로된 방법.
  32. 제28항에 있어서, 1차 산성용액을 2차 염기성 용액에 첨가하여 약 4 내지 12범위의 예비결정된 pH에서 침전물을 형성하는 것으로된 방법.
  33. 제28항에 있어서, 단계(e)의 화합물을 약 10 내지 13 범위의 예비결정된 pH에서 세척된 침전물의 수성슬러리에 첨가하는 것으로된 방법.
  34. 제28항에 있어서, 침전물을 증류수로 세척하는 것으로된 방법.
  35. 제28항에 있어서, 분말이 지르콘산 티탄산납이고 1차 결정체 크기가 약 0.4 마이크론 이하이고 2차 입자 크기는 약 2마이크론 이하인 것으로된 방법.
  36. 제28항에 있어서, 분말이 지르콘산 티탄산납이고 1차 결정체 크기가 약 0.20 마이크론 내지 0.60 마이크론 범위이고 또한 2차 입자크기는 약 0.4마이크론 내지 2.0 마이크론 범위인 것으로된 방법.
  37. 제28항에 있어서, 단계(a)에서 선택된 지르콘산 티탄산납 원소가 La이고 또한 분말 생성물의 13 내지 50몰%을 구성하는 것으로된 방법.
  38. 제28항의 방법으로 수득한 분말.
  39. 제31항의 방법으로 수득한 분말.
  40. a. 하프늄, 지르코늄, 티타늄, 니오븀, 탄탈륨, 우라늄, 철, 안티몬, 란타늄, 비스무트, 토륨, 인듐, 니켈, 망간, 네오디븀, 사마륨, 코발트, 텅스켄 또한 주석, 바나듐, 디스프로슘, 프라세오븀, 이트륨, 프로메륨, 에우로퓸, 세륨, 이테르븀, 루테륨, 스칸듐, 가돌리늄, 테르븀, 홀븀, 에르븀, 툴륨, 크로븀, 칼륨 또한 리튬중에서 선택한 원소의 하나나 그이상의 산성염을 수성용액을 용해시켜 원하는 회티탄석 이론치와 동등한 조성으로된 산성용액을 제조하고, b. (a)의 용액을 나트륨, 암모늄, 또한 칼륨의 수산화물이 들어있는 강하게 혼합된 염기성 용액에 천천히 첨가하고 한편 단계(a)의 성분인 망간, 니켈 도는 코바르를 선택할 때 암모늄을 사용하지 않으며, 그결과 4 내지 12의 pH값이 모든 원소가 수산화물 형태로 침전하는 범위에 도달하고 또한 이와 동등하거나 더 좁은 pH범위를 선택하여 원소를 단계(d)에서 첨가하고, c. 용액으로부터 침전물을 분리하고 정제수로 세척하며, d. 세척된 침전물을 물에 재분산하고 바륨, 스트론륨, 칼슘, 마그네슘, 납, 아연, 이트륨, 망간, 코발트, 아연과 니켈중에서 선택된 원소중 하나나 그이상의 산화물이나 수산화물과 각정비율로 혼합하여 원하는 이론치와 동등한 양의 혼합물을 수득하고 그리하여 균일한 슬러리를 만들고, e. 충분한 온도와 압력, 또한 충분한 시간동안 슬러리를 수화열 처리하여 회티탄석 슬러리로 만들고 또한, f. 회티탄석 슬러리를 냉각하고, 회티탄석을 분리하고 정제수로 세척한 후 건조시키고 납, 지르코늄, 또한 티타늄을 선택할 경우 회티탄석의 일반식이 다음과 같은 것으로된 회티탄석 구조 ABO3의 결정체 세라믹 분말 제조 방법.
    Pb(Zr1-xTix)O3
    여기서 x의 값은 (1) 0 내지 0.44, (2)0.44 내지 0.55 또한 총 도판트와 고체용액 치환레벨이 13%이상이고, (3)0.55 내지 1.00이고, 또한 x의 값이 (1) 또는 (3)인 경우 총도판트와 고체 치환 레벨이 0 내지 50몰%이다.
  41. 제40항에 있어서, 또한 pH값을 조절하여 원하는 크기의 입자를 제조하는 것으로된 방법.
  42. 제40항에 있어서, 침전물을 증류수로 세척하는 것으로된 방법.
  43. 제40항에 있어서, 분말이 지르코산 티탄산납이고 또한 1차 결정체 크기가 약 0.4 마이크론 이하이고 2차 결정체 크기가 약 2마이크론인 것으로된 방법.
  44. 제40항의 방법으로 수득한 분말.
  45. 제41항의 방법으로 수득한 분말.
    ※참고사항:최초출원 내용에 의하여 공개하는 것임.
KR1019900701729A 1988-12-09 1989-12-06 조절된 이론치와 입자크기로된 회티탄석 화합물의 준-마이크론 세라믹 분발 제조방법 KR910700210A (ko)

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PCT/US1989/005509 WO1990006291A1 (en) 1988-12-09 1989-12-06 Process for producing sub-micron ceramic powders of perovskite compounds

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FI912749A0 (fi) 1991-06-07
US5112433A (en) 1992-05-12
NO912150D0 (no) 1991-06-05
CA2004984A1 (en) 1990-06-09
AU643428B2 (en) 1993-11-18
CN1045762A (zh) 1990-10-03
DK106491D0 (da) 1991-06-04
WO1990006291A1 (en) 1990-06-14

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