KR910020871A - 반도체 소자용 전극, 전극을 갖춘 반도체장치 및 그 제조방법 - Google Patents

반도체 소자용 전극, 전극을 갖춘 반도체장치 및 그 제조방법 Download PDF

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KR910020871A
KR910020871A KR1019910008246A KR910008246A KR910020871A KR 910020871 A KR910020871 A KR 910020871A KR 1019910008246 A KR1019910008246 A KR 1019910008246A KR 910008246 A KR910008246 A KR 910008246A KR 910020871 A KR910020871 A KR 910020871A
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electrode
length
contact hole
semiconductor device
semiconductor
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KR1019910008246A
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KR950000207B1 (ko
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오오사무 이께다
요시오 나까무라
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야마지 게이조오
캐논 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)

Abstract

내용 없음

Description

반도체 소자용 전극, 전극을 갖춘 반도체장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도A는 내지 제1E도는 본 발명에 따른 반도체용 전극의 구조를 예시하는 개략도, 제2도 내지 제5도는 본 발명에 따른 반도체 장치의 준비를 위하여 적합한 준비장치를 예시하는 계략도.

Claims (9)

  1. 실질적으로 사각형기둥의 형상인 반도체소자의 반도체영역에 직접 접속되는 반도체 소자용 전극이 상기 전극에서 반도체 영역과 접촉하는 표면의 한변의 길이가 L, 다른변의 길이는 W 및 상기 표면에 실질적으로 수직으로 가로지르는 방향으로의 길이가 H로서 정의될 때, 상기 L, W, H는 L ＞ H ＞W의 관계를 만족하는 것을 특징으로 하는 반도체 소자용전극.
  2. 제1항에 있어서, 상기 전극이 단결정질 Aℓ을 포함하는 것을 특징으로 하는 반도체 소자용전극.
  3. 제1항에 있어서, 상기 전극이 주로 Aℓ으로 구성되는 도체를 포함하는 것을 특징으로 하는 반도체 소자용전극.
  4. 반도체 기판의 주표면상에 형성된 반도체소자 및 상기 주표면상에 제공되는 절연막의 접촉홀을 통하여 접속되는 전극을 포함하며, 상기 접촉홀은 실질적으로 사각형의 개구를 가지며 상기 전극에서 반도체영역과 접촉하는 표면의 한변의 길이가, L, 다른변의 길이는 W 및 상기 표면에 실질적으로 수직으로 가로지르는 방향으로의 길이가 H로서 정의될 때, 상기 L, W, H는 L ＞ H ＞W의 관계를 만족하는 것을 특징으로 하는 반도체장치.
  5. 제4항에 있어서, 상기 접촉홀내의 전극이 단결정질 Aℓ을 포함하는 것을 특징으로 하는 반도체장치.
  6. 제4항에 있어서, 상기 접촉홀내의 전극이 주로 Aℓ으로 구성되는 도체를 포함하는 것을 특징으로 하는 반도체 장치.
  7. 반도체기판의 주표면상에 형성된 반도체소자 및 상기 주표면상에 제공되는 절연막의 접촉홀을 통하여 접속되는 전극을 포함하는 반도체 장치를 준비하기 위한 방법에 있어서, 상기 접촉홀에 개구의 한변의 길이가 L, 다른변의 길이는 W 및 상기 표면에 실질적으로 수직으로 가로지르는 방향으로의 길이가 H로서 정의될때, 상기 L, W, H는 L ＞ H ＞W의 관계를 만족하는 접촉홀을 형성하는 단계; 및 적어도 알킬알루미늄 수소화물 및 수소의 개스를 활용하는 CVD법에 의하여 상기 접촉홀내에 Aℓ또는 주로 Aℓ으로 구성된 도체를 침전시키는 단계를 포함하는 것을 특징으로 하는 반도체장치를 준비하기 위한 방법.
  8. 제7항에 있어서, 상기 알킬알루미늄 수소화물이 디메틸알루미늄 수소화물인 것을 특징으로 하는 반도체장치를 준비하기 위한 방법.
  9. 제7항에 있어서, 상기 접촉홀을 형성하는 단계에 있어서, 전자증여 표면이 상기 홀내에서 노출되고 또한 상기 침전의 단계에서 상기 Aℓ또는 주로 Aℓ으로 구성되는 도체가 상기 전자증여 표면상에 표면반응을 통하여 선택적으로 코팅되는 것을 특징으로 하는 반도체장치를 준비하기 위한 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019910008246A 1990-05-31 1991-05-22 반도체소자용 전극, 전극을 갖춘 반도체장치 및 그 제조방법 KR950000207B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2-143732 1990-05-31
JP2143732A JPH0437067A (ja) 1990-05-31 1990-05-31 半導体素子用電極及び該電極を有する半導体装置及びその製造方法
JP90-143732 1990-05-31

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KR910020871A true KR910020871A (ko) 1991-12-20
KR950000207B1 KR950000207B1 (ko) 1995-01-11

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US (2) US5233224A (ko)
EP (1) EP0463731A1 (ko)
JP (1) JPH0437067A (ko)
KR (1) KR950000207B1 (ko)
CN (2) CN1027946C (ko)
MY (1) MY108561A (ko)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04309248A (ja) * 1991-04-08 1992-10-30 Nec Corp 半導体装置
US5580808A (en) * 1992-07-30 1996-12-03 Canon Kabushiki Kaisha Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam
JP3334911B2 (ja) * 1992-07-31 2002-10-15 キヤノン株式会社 パターン形成方法
KR970001883B1 (ko) * 1992-12-30 1997-02-18 삼성전자 주식회사 반도체장치 및 그 제조방법
US5571751A (en) * 1994-05-09 1996-11-05 National Semiconductor Corporation Interconnect structures for integrated circuits
US5464794A (en) * 1994-05-11 1995-11-07 United Microelectronics Corporation Method of forming contact openings having concavo-concave shape
EP0703611B1 (en) * 1994-08-31 2007-05-02 Texas Instruments Incorporated Method for insulating metal leads using a low dielectric constant material, and structures formed therewith
US6069370A (en) * 1997-03-26 2000-05-30 Nec Corporation Field-effect transistor and fabrication method thereof and image display apparatus
US6054769A (en) * 1997-01-17 2000-04-25 Texas Instruments Incorporated Low capacitance interconnect structures in integrated circuits having an adhesion and protective overlayer for low dielectric materials
US5818111A (en) * 1997-03-21 1998-10-06 Texas Instruments Incorporated Low capacitance interconnect structures in integrated circuits using a stack of low dielectric materials
US6332835B1 (en) 1997-11-20 2001-12-25 Canon Kabushiki Kaisha Polishing apparatus with transfer arm for moving polished object without drying it
US6965165B2 (en) 1998-12-21 2005-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's
US7381642B2 (en) 2004-09-23 2008-06-03 Megica Corporation Top layers of metal for integrated circuits
US7405149B1 (en) * 1998-12-21 2008-07-29 Megica Corporation Post passivation method for semiconductor chip or wafer
US7335556B2 (en) * 2004-06-14 2008-02-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
DE102005041099A1 (de) * 2005-08-30 2007-03-29 Osram Opto Semiconductors Gmbh LED-Chip mit Glasbeschichtung und planarer Aufbau- und Verbindungstechnik
JP2008060532A (ja) * 2006-08-04 2008-03-13 Seiko Epson Corp 半導体装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3847687A (en) * 1972-11-15 1974-11-12 Motorola Inc Methods of forming self aligned transistor structure having polycrystalline contacts
JPS5459080A (en) * 1977-10-19 1979-05-12 Nec Corp Semiconductor device
GB2038883B (en) 1978-11-09 1982-12-08 Standard Telephones Cables Ltd Metallizing semiconductor devices
US4438450A (en) * 1979-11-30 1984-03-20 Bell Telephone Laboratories, Incorporated Solid state device with conductors having chain-shaped grain structure
JPS58176937A (ja) 1982-04-09 1983-10-17 Fujitsu Ltd 微細パタ−ン
US4515654A (en) * 1982-07-06 1985-05-07 General Electric Company Method for making semiconductor devices utilizing eutectic masks
US4673960A (en) * 1982-12-09 1987-06-16 Cornell Research Foundation, Inc. Fabrication of metal lines for semiconductor devices
JPS62123716A (ja) 1985-11-22 1987-06-05 Nec Corp 半導体装置の製造方法
US4920070A (en) * 1987-02-19 1990-04-24 Fujitsu Limited Method for forming wirings for a semiconductor device by filling very narrow via holes
KR910006164B1 (ko) * 1987-03-18 1991-08-16 가부시키가이샤 도시바 박막형성방법과 그 장치
US4878770A (en) * 1987-09-09 1989-11-07 Analog Devices, Inc. IC chips with self-aligned thin film resistors
JPH01198475A (ja) 1988-02-02 1989-08-10 Anelva Corp 薄膜作製方法
US5001081A (en) * 1988-01-19 1991-03-19 National Semiconductor Corp. Method of manufacturing a polysilicon emitter and a polysilicon gate using the same etch of polysilicon on a thin gate oxide
US5468989A (en) * 1988-06-02 1995-11-21 Hitachi, Ltd. Semiconductor integrated circuit device having an improved vertical bipolar transistor structure
JPH0623429B2 (ja) 1988-07-28 1994-03-30 日電アネルバ株式会社 シリコン基板上にアルミニウムの平滑な薄膜を作製する方法とそれを用いた光学的反射鏡
JPH02185026A (ja) * 1989-01-11 1990-07-19 Nec Corp Ａｌ薄膜の選択的形成方法
US5072288A (en) * 1989-02-21 1991-12-10 Cornell Research Foundation, Inc. Microdynamic release structure
EP0390606A3 (en) * 1989-03-31 1991-10-09 Canon Kabushiki Kaisha Semiconductor device having transistor improved in emitter region and/or base electrode
JP2721023B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法

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Publication number Publication date
US5233224A (en) 1993-08-03
JPH0437067A (ja) 1992-02-07
KR950000207B1 (ko) 1995-01-11
MY108561A (en) 1996-10-31
CN1027946C (zh) 1995-03-15
CN1037301C (zh) 1998-02-04
CN1106163A (zh) 1995-08-02
US6218223B1 (en) 2001-04-17
EP0463731A1 (en) 1992-01-02
CN1056954A (zh) 1991-12-11

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