KR910017672A - 모스패트 제조방법 - Google Patents
모스패트 제조방법 Download PDFInfo
- Publication number
- KR910017672A KR910017672A KR1019900002998A KR900002998A KR910017672A KR 910017672 A KR910017672 A KR 910017672A KR 1019900002998 A KR1019900002998 A KR 1019900002998A KR 900002998 A KR900002998 A KR 900002998A KR 910017672 A KR910017672 A KR 910017672A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide film
- deposited
- mosfet manufacturing
- film
- polysilicon
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 150000004767 nitrides Chemical class 0.000 claims 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- 229920005591 polysilicon Polymers 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 2도는 본 발명의 공정순서를 나타낸 단면도.
Claims (1)
- 기판(1)에 패드산화막(2)과 질화막(3)을 디포지션하고 이 질화막(3)을 패터닝하며, 상기 패드산화막(2)위에 열산화막(4)을 형성 후 n-이온을 주입하고 이어 질화막(3)을 제거하여 게이트 산화막(5)을 형성한 후 폴리실리콘(6)을 디포지션하며, 상기 폴리실리콘(6) 패턴 후 저온산화막(7)을 디포지션하고 측벽(7a)을 형성한 다음 n+이온을 주입하여 소오스/드레인을 형성함을 특징으로 하는 모스패트 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900002998A KR0161840B1 (ko) | 1990-03-07 | 1990-03-07 | 모스패트 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900002998A KR0161840B1 (ko) | 1990-03-07 | 1990-03-07 | 모스패트 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR910017672A true KR910017672A (ko) | 1991-11-05 |
| KR0161840B1 KR0161840B1 (ko) | 1998-12-01 |
Family
ID=19296741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019900002998A KR0161840B1 (ko) | 1990-03-07 | 1990-03-07 | 모스패트 제조방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0161840B1 (ko) |
-
1990
- 1990-03-07 KR KR1019900002998A patent/KR0161840B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR0161840B1 (ko) | 1998-12-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20090727 Year of fee payment: 12 |
|
| LAPS | Lapse due to unpaid annual fee |