KR910016065A - 막형성 방법 및 막형성장치 - Google Patents

막형성 방법 및 막형성장치 Download PDF

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Publication number
KR910016065A
KR910016065A KR1019900002745A KR900002745A KR910016065A KR 910016065 A KR910016065 A KR 910016065A KR 1019900002745 A KR1019900002745 A KR 1019900002745A KR 900002745 A KR900002745 A KR 900002745A KR 910016065 A KR910016065 A KR 910016065A
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South Korea
Prior art keywords
gas
plasma
film
processed
reaction vessel
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KR1019900002745A
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English (en)
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KR0149168B1 (ko
Inventor
요시오 구마가이
카쓰야 오쿠무라
다카히꼬 모리야
신지 미야자키
스스무 다나카
Original Assignee
고다까 토시오
도오교오 에레구토론 가부시끼가이샤
아오이 죠이치
가부시끼가이샤 도오시바
후세 노보루
도오교오 에레구토론 사가미 가부시끼가이샤
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Priority claimed from JP1046889A external-priority patent/JP2740789B2/ja
Priority claimed from JP17736889A external-priority patent/JPH03224222A/ja
Application filed by 고다까 토시오, 도오교오 에레구토론 가부시끼가이샤, 아오이 죠이치, 가부시끼가이샤 도오시바, 후세 노보루, 도오교오 에레구토론 사가미 가부시끼가이샤 filed Critical 고다까 토시오
Publication of KR910016065A publication Critical patent/KR910016065A/ko
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Publication of KR0149168B1 publication Critical patent/KR0149168B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/917—Differential etching apparatus having a barrel reactor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/913—Diverse treatments performed in unitary chamber

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

내용 없음

Description

막형성 방법 및 막형성장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는, 본 발명방법의 1실시예를 설명하기 위한 막형성장치를 나타낸 도면, 제2도는, 제1도의 장치를 위해서 본 평면도, 제3도는, 본 발명에 의한 자연산화막의 제거의 원리를 설명하기 위한 설명도.

Claims (6)

  1. 막형성 방응용기내에 다수매의 피처리판을 수용하는 공정과, 에칭 가스를 공급하는 공정과, 상기 피처리판을 가열 상태에서, 상기 에칭 가스를 플라즈마화 하여, 피처리체의 표면의 자연 산화에 의한 막을 제거하는 공정과, 상기 가열 상태에서 에칭 가스의 공급 및 플라즈마화를 정지하여 상기 에칭 가스를 배기하는 공정과, 상기 반응용기를 대기에 개방하는 일없이 상기 반응용기내에 막형성 가스를 공급하는 공정과, 를 구비하는 막형성 방법.
  2. 반응용기배에 피처리체를 다수 수용하고, 이 피처리체군에 처리가스 및 반응가스를 사용하여 소정의 처리를 시행하는 막형성 장치에 있어서, 반응용기 외부의 배열 설치되어 처리가스를 플라즈마화 하는 플라즈마화 기구와, 이 플라즈마화 기구로 생성된 처리가스 플라즈마를 상기 반응용기내로 도입하는 플라즈마 수송관 과를 구비하는 것을 특징으로 한 막형성 장치.
  3. 처리가스 플라즈마화 기구에 의하여 플라즈마화된 에칭 가스에 의하여 피처리체의 표면층을 제거하는 공정과, 상기 반응용기내에 반응가스를 도입하여 상기 제거 처리된 상기 피처리체군에 막형성을 시행하는 것을 특징으로 하는 막형성 방법.
  4. 플라즈마화 기구에 의하여 플라즈마화한 처리가스와 반응가스에 의하여 피처리체에 막형성을 시행하는 것을 특징으로 하는 막형성 방법.
  5. 제4항에 있어서, 처리가스 플라즈마화 기구에 의하여 에칭 가스를 플라즈마화 한후, 이 플라즈마화한 에칭 가스에 의하여 피처리체군을 에칭하는 것인 막형성 방법.
  6. 제5항에 있어서, 처리가스 플라즈마화 기구에 의하여 에칭 가스를 플라즈마화 하는 공정과, 해당 플라즈마화한 에칭 가스에 의하여 반응용기내를 에칭 세정 하는 것인 막형성 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900002745A 1989-02-28 1990-02-28 막형성 방법 및 막형성장치 KR0149168B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP46889 1989-02-28
JP1046889A JP2740789B2 (ja) 1988-10-31 1989-02-28 処理方法
JP1-46889 1989-02-28
JP177368 1989-07-10
JP1-177368 1989-07-10
JP17736889A JPH03224222A (ja) 1988-10-31 1989-07-10 成膜方法

Publications (2)

Publication Number Publication Date
KR910016065A true KR910016065A (ko) 1991-09-30
KR0149168B1 KR0149168B1 (ko) 1998-12-01

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100360399B1 (ko) * 2000-03-07 2002-11-13 삼성전자 주식회사 반구형입자(ｈｓｇ)막을 구비한 반도체소자의 제조방법

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101155432B1 (ko) * 2009-08-18 2012-06-18 국제엘렉트릭코리아 주식회사 퍼니스형 반도체 설비

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100360399B1 (ko) * 2000-03-07 2002-11-13 삼성전자 주식회사 반구형입자(ｈｓｇ)막을 구비한 반도체소자의 제조방법
US6537876B2 (en) 2000-03-07 2003-03-25 Samsung Electronics Co., Ltd. Method of manufacturing a semiconductor capacitor having a hemispherical grain layer using a dry cleaning process

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