KR910007101B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR910007101B1
KR910007101B1 KR1019830002968A KR830002968A KR910007101B1 KR 910007101 B1 KR910007101 B1 KR 910007101B1 KR 1019830002968 A KR1019830002968 A KR 1019830002968A KR 830002968 A KR830002968 A KR 830002968A KR 910007101 B1 KR910007101 B1 KR 910007101B1
Authority
KR
South Korea
Prior art keywords
film
substrate
wiring layer
semiconductor device
protective electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019830002968A
Other languages
English (en)
Korean (ko)
Other versions
KR840005921A (ko
Inventor
도오루 이나바
Original Assignee
가부시기가이샤 히다찌세이사꾸쇼
미쓰다 가쓰시게
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시기가이샤 히다찌세이사꾸쇼, 미쓰다 가쓰시게 filed Critical 가부시기가이샤 히다찌세이사꾸쇼
Publication of KR840005921A publication Critical patent/KR840005921A/ko
Application granted granted Critical
Publication of KR910007101B1 publication Critical patent/KR910007101B1/ko
Expired legal-status Critical Current

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Classifications

    • H10P14/60—
    • H10W42/00—
    • H10W20/47—
    • H10W20/48—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
KR1019830002968A 1982-09-24 1983-06-30 반도체 장치 Expired KR910007101B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP57164839A JPS5955037A (ja) 1982-09-24 1982-09-24 半導体装置
JP?57-164839 1982-09-24
JP164839 1982-09-24

Publications (2)

Publication Number Publication Date
KR840005921A KR840005921A (ko) 1984-11-19
KR910007101B1 true KR910007101B1 (ko) 1991-09-18

Family

ID=15800899

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019830002968A Expired KR910007101B1 (ko) 1982-09-24 1983-06-30 반도체 장치

Country Status (7)

Country Link
US (1) US4841354A (cg-RX-API-DMAC10.html)
JP (1) JPS5955037A (cg-RX-API-DMAC10.html)
KR (1) KR910007101B1 (cg-RX-API-DMAC10.html)
DE (1) DE3331624C2 (cg-RX-API-DMAC10.html)
FR (1) FR2533750B1 (cg-RX-API-DMAC10.html)
GB (1) GB2128025B (cg-RX-API-DMAC10.html)
IT (1) IT1168293B (cg-RX-API-DMAC10.html)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60138940A (ja) * 1983-12-27 1985-07-23 Toshiba Corp 半導体装置の製造方法
IT1185731B (it) * 1984-12-07 1987-11-12 Rca Corp Sistema metallico di tenuta marginale,a due livelli,per un dispositivo semicondutore
US4656055A (en) * 1984-12-07 1987-04-07 Rca Corporation Double level metal edge seal for a semiconductor device
US5111276A (en) * 1985-03-19 1992-05-05 National Semiconductor Corp. Thick bus metallization interconnect structure to reduce bus area
JPS61283160A (ja) * 1985-06-10 1986-12-13 Mitsubishi Electric Corp 半導体記憶装置
JPH0715970B2 (ja) * 1985-09-26 1995-02-22 富士通株式会社 半導体装置の製造方法
JPS62194644A (ja) * 1986-02-20 1987-08-27 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2557898B2 (ja) * 1987-07-31 1996-11-27 株式会社東芝 半導体装置
JPH077783B2 (ja) * 1988-03-18 1995-01-30 株式会社東芝 電気的接続部に銅もしくは銅合金製金属細線を配置する半導体装置
US5187558A (en) * 1989-05-08 1993-02-16 Mitsubishi Denki Kabushiki Kaisha Stress reduction structure for a resin sealed semiconductor device
US5216280A (en) * 1989-12-02 1993-06-01 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device having pads at periphery of semiconductor chip
SE465193B (sv) * 1989-12-06 1991-08-05 Ericsson Telefon Ab L M Foer hoegspaenning avsedd ic-krets
JP3144817B2 (ja) * 1990-03-23 2001-03-12 株式会社東芝 半導体装置
JPH04256371A (ja) * 1991-02-08 1992-09-11 Toyota Autom Loom Works Ltd 半導体装置及びその製造方法
US5252382A (en) * 1991-09-03 1993-10-12 Cornell Research Foundation, Inc. Interconnect structures having patterned interfaces to minimize stress migration and related electromigration damages
US5430325A (en) * 1992-06-30 1995-07-04 Rohm Co. Ltd. Semiconductor chip having dummy pattern
US5306945A (en) * 1992-10-27 1994-04-26 Micron Semiconductor, Inc. Feature for a semiconductor device to reduce mobile ion contamination
US5439731A (en) * 1994-03-11 1995-08-08 Cornell Research Goundation, Inc. Interconnect structures containing blocked segments to minimize stress migration and electromigration damage
JP3504421B2 (ja) * 1996-03-12 2004-03-08 株式会社ルネサステクノロジ 半導体装置
TW448524B (en) * 1997-01-17 2001-08-01 Seiko Epson Corp Electronic component, semiconductor device, manufacturing method therefor, circuit board and electronic equipment
US6137155A (en) * 1997-12-31 2000-10-24 Intel Corporation Planar guard ring
US6562674B1 (en) * 1999-07-06 2003-05-13 Matsushita Electronics Corporation Semiconductor integrated circuit device and method of producing the same
US6614118B1 (en) * 1999-12-15 2003-09-02 Intel Corporation Structures to mechanically stabilize isolated top-level metal lines
DE10126955A1 (de) * 2001-06-01 2002-12-05 Philips Corp Intellectual Pty Integrierte Schaltung mit energieabsorbierender Struktur
JP4501715B2 (ja) * 2005-02-16 2010-07-14 セイコーエプソン株式会社 Ｍｅｍｓ素子およびｍｅｍｓ素子の製造方法
DE102007020263B4 (de) 2007-04-30 2013-12-12 Infineon Technologies Ag Verkrallungsstruktur
US9076821B2 (en) * 2007-04-30 2015-07-07 Infineon Technologies Ag Anchoring structure and intermeshing structure
US20110079908A1 (en) * 2009-10-06 2011-04-07 Unisem Advanced Technologies Sdn. Bhd. Stress buffer to protect device features
DE112013006871T5 (de) * 2013-03-27 2015-12-10 Toyota Jidosha Kabushiki Kaisha Vertikale Halbleitervorrichtung

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1424544A (fr) * 1964-12-03 1966-01-15 Csf Procédé de passivation des éléments semiconducteurs
JPS492798B1 (cg-RX-API-DMAC10.html) * 1969-04-16 1974-01-22
GB1249812A (en) * 1969-05-29 1971-10-13 Ferranti Ltd Improvements relating to semiconductor devices
GB1251456A (cg-RX-API-DMAC10.html) * 1969-06-12 1971-10-27
US3751292A (en) * 1971-08-20 1973-08-07 Motorola Inc Multilayer metallization system
JPS4835778A (cg-RX-API-DMAC10.html) * 1971-09-09 1973-05-26
US4001870A (en) * 1972-08-18 1977-01-04 Hitachi, Ltd. Isolating protective film for semiconductor devices and method for making the same
JPS5421073B2 (cg-RX-API-DMAC10.html) * 1974-04-15 1979-07-27
US3997964A (en) * 1974-09-30 1976-12-21 General Electric Company Premature breakage resistant semiconductor wafer and method for the manufacture thereof
US3985597A (en) * 1975-05-01 1976-10-12 International Business Machines Corporation Process for forming passivated metal interconnection system with a planar surface
DE2603747A1 (de) * 1976-01-31 1977-08-04 Licentia Gmbh Integrierte schaltungsanordnung
JPS56140648A (en) * 1980-04-04 1981-11-04 Hitachi Ltd Semiconductor integrated circuit device
JPS5745259A (en) * 1980-09-01 1982-03-15 Hitachi Ltd Resin sealing type semiconductor device
IT1153991B (it) * 1980-10-29 1987-01-21 Rca Corp Metodo per creare una struttura a metallizzazione dielettrico
JPS57113235A (en) * 1980-12-29 1982-07-14 Nec Corp Semiconductor device
DE3137914A1 (de) * 1981-09-23 1983-04-07 Siemens AG, 1000 Berlin und 8000 München Anordnung zur kompensation von korrosionseffekten inintegrierten halbleiterschaltkreisen
JPS5913364A (ja) * 1982-07-14 1984-01-24 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
DE3331624A1 (de) 1984-03-29
IT8322982A0 (it) 1983-09-23
DE3331624C2 (de) 1994-01-20
GB2128025A (en) 1984-04-18
KR840005921A (ko) 1984-11-19
US4841354A (en) 1989-06-20
GB8324765D0 (en) 1983-10-19
JPH0373136B2 (cg-RX-API-DMAC10.html) 1991-11-20
GB2128025B (en) 1986-05-21
FR2533750A1 (fr) 1984-03-30
JPS5955037A (ja) 1984-03-29
IT8322982A1 (it) 1985-03-23
IT1168293B (it) 1987-05-20
FR2533750B1 (fr) 1986-01-24

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