IT1185731B - Sistema metallico di tenuta marginale,a due livelli,per un dispositivo semicondutore - Google Patents

Sistema metallico di tenuta marginale,a due livelli,per un dispositivo semicondutore

Info

Publication number
IT1185731B
IT1185731B IT22911/85A IT2291185A IT1185731B IT 1185731 B IT1185731 B IT 1185731B IT 22911/85 A IT22911/85 A IT 22911/85A IT 2291185 A IT2291185 A IT 2291185A IT 1185731 B IT1185731 B IT 1185731B
Authority
IT
Italy
Prior art keywords
levels
seal
metal system
semiconductive device
semiconductive
Prior art date
Application number
IT22911/85A
Other languages
English (en)
Other versions
IT8522911A0 (it
Inventor
Robert Andrew Dwyer
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT8522911A0 publication Critical patent/IT8522911A0/it
Application granted granted Critical
Publication of IT1185731B publication Critical patent/IT1185731B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528Geometry or layout of the interconnection structure
    • H01L23/5286Arrangements of power or ground buses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
IT22911/85A 1984-12-07 1985-11-20 Sistema metallico di tenuta marginale,a due livelli,per un dispositivo semicondutore IT1185731B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US67958984A 1984-12-07 1984-12-07

Publications (2)

Publication Number Publication Date
IT8522911A0 IT8522911A0 (it) 1985-11-20
IT1185731B true IT1185731B (it) 1987-11-12

Family

ID=24727510

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22911/85A IT1185731B (it) 1984-12-07 1985-11-20 Sistema metallico di tenuta marginale,a due livelli,per un dispositivo semicondutore

Country Status (5)

Country Link
JP (1) JPH0758709B2 (it)
KR (1) KR940009351B1 (it)
DE (1) DE3542654C2 (it)
GB (1) GB2168532B (it)
IT (1) IT1185731B (it)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50114170A (it) * 1974-02-15 1975-09-06
DE2603747A1 (de) * 1976-01-31 1977-08-04 Licentia Gmbh Integrierte schaltungsanordnung
JPS5513136A (en) * 1978-07-17 1980-01-30 Tdk Corp Liquid atomizer
US4364078A (en) * 1978-08-15 1982-12-14 Synertek Edge barrier of polysilicon and metal for integrated circuit chips
DE3137914A1 (de) * 1981-09-23 1983-04-07 Siemens AG, 1000 Berlin und 8000 München Anordnung zur kompensation von korrosionseffekten inintegrierten halbleiterschaltkreisen
DE3220250A1 (de) * 1982-05-28 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement mit planarstruktur
JPS5955037A (ja) * 1982-09-24 1984-03-29 Hitachi Ltd 半導体装置
JPS5980936A (ja) * 1983-08-31 1984-05-10 Hitachi Ltd 電子部品

Also Published As

Publication number Publication date
GB2168532B (en) 1988-10-05
DE3542654C2 (de) 1995-12-14
JPS61137347A (ja) 1986-06-25
KR940009351B1 (ko) 1994-10-07
JPH0758709B2 (ja) 1995-06-21
IT8522911A0 (it) 1985-11-20
GB2168532A (en) 1986-06-18
KR860005439A (ko) 1986-07-23
DE3542654A1 (de) 1986-06-12
GB8530031D0 (en) 1986-01-15

Similar Documents

Publication Publication Date Title
IT1138764B (it) Dispositivo per interramento o dissotterramento di condotte subacquee
ES510918A0 (es) Instalacion de reactor.
IT8548208A0 (it) Sistema di riferimento inerziale
AR228513A1 (es) Dispositivo de perforacion
BR8202512A (pt) Dispositivo de vedacao
RO89084A (ro) Combina miniera pentru lucrari miniere de inaintare
ATE8881T1 (de) Enkephalinase enzyme inhibierende verbindungen.
IT8224830A0 (it) Dispositivo per scavalcare giunti di dilatazione.
DE3228583A1 (de) Abdichteinrichtung
IT8267145A0 (it) Valvola di scarico particolarmente per scalpelli da roccia
NO821387L (no) Tetningsanordning for kuleventil.
IT8224537A0 (it) Chiusura ermetica per cuscinetti arotolamento.
IT1119367B (it) Sistema di perforazione per trivellazioni
NO861717L (no) Paavirkningsorgan for en underjordisk anordning.
NO822883L (no) Heisemekanisme for borerigg.
BR8203681A (pt) Dispositivo de perfuracao para sondagem
IT8520960A0 (it) Dispositivo di polverizzazione per detonazione.
NO165563C (no) Tetningsanordning.
NO153635C (no) Sikringsanordning for vannfoerende husholdningsapparater.
ES518662A0 (es) Procedimiento para la formacion de un dispositivo semiconductor.
IT8222152A0 (it) Dispositivo per la trasmissione disegnali.
IT8220051A0 (it) Dispositivo di fissaggio.
DK411782A (da) Tappehane for oel
IT1185731B (it) Sistema metallico di tenuta marginale,a due livelli,per un dispositivo semicondutore
IT8221483A0 (it) Struttura di guarnizione per valvola bidirezionale.

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971125