KR910002925A - 저금속 이온 함량의 노볼락 수지의 제조방법 - Google Patents
저금속 이온 함량의 노볼락 수지의 제조방법 Download PDFInfo
- Publication number
- KR910002925A KR910002925A KR1019900010629A KR900010629A KR910002925A KR 910002925 A KR910002925 A KR 910002925A KR 1019900010629 A KR1019900010629 A KR 1019900010629A KR 900010629 A KR900010629 A KR 900010629A KR 910002925 A KR910002925 A KR 910002925A
- Authority
- KR
- South Korea
- Prior art keywords
- acid
- weight
- concentration
- metal ion
- ion content
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
- C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
- C08G8/10—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with phenol
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Phenolic Resins Or Amino Resins (AREA)
- Processes Of Treating Macromolecular Substances (AREA)
- Materials For Photolithography (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (10)
- 통상의 노볼락 수지를 약 25 내지 50중량% 농도로 유기 용매 또는 용매 혼합물에 용해시키고, 수지 용액을산성, 바람직하게는 착물-형성 화합물과 1회 또는 반복적으로 접촉시켜 수지 용액의 금속 이온 함량을 감소시킴을 특징으로 하여, 감소된 금속 이온 함량의 노볼락 수지의 제조방법.
- 제1항에 있어서, 산성, 바람직하게는 착물, 형성화합물을 약 0,01 내지 20중량%농도로 물에 용해시키는 방법.
- 제1항에 있어서, 액체-액체 추출 형태로 접촉을 수행하는 방법.
- 제3항에 있어서, 단일-단계 또는 다-단계 교차-류 또는 역류 처리로 접촉을 수행하는 방법.
- 제1항에 있어서, 약 30중량% 농도로 노볼락 수지용액을 사용하는 방법.
- 제2항에 있어서, 약 0.05 내지 3중량% 농도로 산성, 바람직하게는 착물-형성 화합물 용액을 사용하는 방법.
- 제1항에 있어서, 산성, 바람직하게는 착물-형성화합물이 하나 이상의 활성 수소를 함유하며 기타 활성 수소원자 또는 극성 잔기와 추가의 원자가 결합을 형성할 수 있는 유기 화합물을 포함하는 방법.
- 제7항에 있어서, 사용된 유기 화합물이 그의 분자중에 카복실, 하이드록실, 옥소, 아미노 또는 에스테르 그룹 같은 착물-형성 치환제를 갖는 저분자량 카복실산을 포함하는 방법.
- 제8항에 있어서, 사용된 유기 화합물이 포름산, 아세트산, 옥살산, 글리콜산, 락트산, 타르타르산, 및 시트르산중에서 선택된 물질을 함유하는 방법.
- ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3923426A DE3923426A1 (de) | 1989-07-15 | 1989-07-15 | Verfahren zur herstellung von novolak-harzen mit geringem metallionengehalt |
DE3923426 | 1989-07-15 | ||
DEP39234266 | 1989-07-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910002925A true KR910002925A (ko) | 1991-02-26 |
KR0163182B1 KR0163182B1 (ko) | 1999-01-15 |
Family
ID=6385103
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900010629A KR0163182B1 (ko) | 1989-07-15 | 1990-07-13 | 저금속 이온 함량의 노볼락 수지의 제조방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5073622A (ko) |
EP (1) | EP0409017B1 (ko) |
JP (1) | JP3221492B2 (ko) |
KR (1) | KR0163182B1 (ko) |
DE (2) | DE3923426A1 (ko) |
HK (1) | HK8697A (ko) |
Families Citing this family (47)
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US6121217A (en) | 1990-11-05 | 2000-09-19 | Ekc Technology, Inc. | Alkanolamine semiconductor process residue removal composition and process |
US6110881A (en) * | 1990-11-05 | 2000-08-29 | Ekc Technology, Inc. | Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials |
US6000411A (en) * | 1990-11-05 | 1999-12-14 | Ekc Technology, Inc. | Cleaning compositions for removing etching residue and method of using |
US5279771A (en) | 1990-11-05 | 1994-01-18 | Ekc Technology, Inc. | Stripping compositions comprising hydroxylamine and alkanolamine |
US20040018949A1 (en) * | 1990-11-05 | 2004-01-29 | Wai Mun Lee | Semiconductor process residue removal composition and process |
US6242400B1 (en) | 1990-11-05 | 2001-06-05 | Ekc Technology, Inc. | Method of stripping resists from substrates using hydroxylamine and alkanolamine |
US7205265B2 (en) | 1990-11-05 | 2007-04-17 | Ekc Technology, Inc. | Cleaning compositions and methods of use thereof |
US5580949A (en) * | 1991-12-18 | 1996-12-03 | Hoechst Celanese Corporation | Metal ion reduction in novolak resins and photoresists |
JP3630422B2 (ja) * | 1991-12-18 | 2005-03-16 | クラリアント・ファイナンス・(ビーブイアイ)・リミテッド | ノボラック樹脂中の金属イオンの低減 |
KR100242920B1 (ko) * | 1992-03-06 | 2000-03-02 | 잰대머 | 저수준의 금속이온을 갖는 포토레지스트(rhotoresists having a low level of metal ions) |
US5300628A (en) * | 1992-06-29 | 1994-04-05 | Ocg Microelectronic Materials, Inc. | Selected chelate resins and their use to remove multivalent metal impurities from resist components |
SG52770A1 (en) * | 1992-07-10 | 1998-09-28 | Hoechst Celanese Corp | Metal ion reduction in top anti-reflective coatings for photoresists |
US5830990A (en) * | 1992-07-10 | 1998-11-03 | Clariant Finance (Bvi) Limited | Low metals perfluorooctanoic acid and top anti-reflective coatings for photoresists |
WO1994012912A1 (en) * | 1992-11-25 | 1994-06-09 | Hoechst Celanese Corporation | Metal ion reduction in bottom anti-reflective coatings for photoresists |
US5476750A (en) * | 1992-12-29 | 1995-12-19 | Hoechst Celanese Corporation | Metal ion reduction in the raw materials and using a Lewis base to control molecular weight of novolak resin to be used in positive photoresists |
US5374500A (en) * | 1993-04-02 | 1994-12-20 | International Business Machines Corporation | Positive photoresist composition containing photoacid generator and use thereof |
US7144849B2 (en) * | 1993-06-21 | 2006-12-05 | Ekc Technology, Inc. | Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials |
US5443736A (en) * | 1993-10-20 | 1995-08-22 | Shipley Company Inc. | Purification process |
US5525315A (en) * | 1993-12-07 | 1996-06-11 | Shipley Company, L.L.C. | Process for removing heavy metal ions with a chelating cation exchange resin |
JPH07271020A (ja) * | 1994-03-18 | 1995-10-20 | Internatl Business Mach Corp <Ibm> | ブラックマトリックス形成用感光性組成物、カラーフィルター基板及びそれを用いた液晶表示装置 |
US5686561A (en) * | 1994-08-23 | 1997-11-11 | Hoechst Celanese Corporation | Metal ion reduction in novolak resin solution using an anion exchange resin |
US5837417A (en) * | 1994-12-30 | 1998-11-17 | Clariant Finance (Bvi) Limited | Quinone diazide compositions containing low metals p-cresol oligomers and process of producing the composition |
US5614352A (en) * | 1994-12-30 | 1997-03-25 | Hoechst Celanese Corporation | Metal ion reduction in novolak resins solution in PGMEA by chelating ion exchange resin |
US5521052A (en) * | 1994-12-30 | 1996-05-28 | Hoechst Celanese Corporation | Metal ion reduction in novolak resin using an ion exchange catalyst in a polar solvent and photoresists compositions therefrom |
US5612304A (en) * | 1995-07-07 | 1997-03-18 | Olin Microelectronic Chemicals, Inc. | Redox reagent-containing post-etch residue cleaning composition |
US5618655A (en) * | 1995-07-17 | 1997-04-08 | Olin Corporation | Process of reducing trace levels of metal impurities from resist components |
US5623042A (en) * | 1995-07-19 | 1997-04-22 | Olin Corporation | Process for reducing trace levels of metallic impurities in cyclized polyisoprene resin |
US5693749A (en) * | 1995-09-20 | 1997-12-02 | Hoechst Celanese Corporation | Fractionation of phenol formaldehyde condensate and photoresist compositions produced therefrom |
US5750031A (en) * | 1995-09-26 | 1998-05-12 | Clariant Finance (Bvi) Limited | Process for producing surfactant having a low metal ion level and developer produced therefrom |
US5656413A (en) * | 1995-09-28 | 1997-08-12 | Hoechst Celanese Corporation | Low metal ion containing 4,4'-[1-[4-[1-(4-Hydroxyphenyl)-1-methylethyl]phenyl]ethylidene]bisphe nol and photoresist compositions therefrom |
US5962183A (en) * | 1995-11-27 | 1999-10-05 | Clariant Finance (Bvi) Limited | Metal ion reduction in photoresist compositions by chelating ion exchange resin |
US5665517A (en) * | 1996-01-11 | 1997-09-09 | Hoechst Celanese Corporation | Acidic ion exchange resin as a catalyst to synthesize a novolak resin and photoresist composition therefrom |
US5910559A (en) * | 1996-12-18 | 1999-06-08 | Clariant Finance (Bvi) Limited | Fractionated novolak resin from cresol-formaldehyde reaction mixture and photoresist composition therefrom |
US5936071A (en) * | 1998-02-02 | 1999-08-10 | Clariant Finance (Bvi) Limited | Process for making a photoactive compound and photoresist therefrom |
DE19809998A1 (de) * | 1998-03-09 | 1999-09-16 | Buna Sow Leuna Olefinverb Gmbh | Verfahren zur Abtrennung organischer Metallsalze aus einer Polymerlösung |
US5955570A (en) * | 1998-07-01 | 1999-09-21 | Clariant International Ltd. | Trace metal ion reduction by Ion Exchange Pack |
JP2002097219A (ja) * | 2000-09-21 | 2002-04-02 | Sumitomo Chem Co Ltd | 金属含量の低減されたポリ(メタ)アクリレート類の製造方法 |
US20060172231A1 (en) * | 2002-08-08 | 2006-08-03 | Fujifilm Electronic Materials U.S.A., Inc | Use of an oxidizer to improve trace metals removal from photoresist and photoresist components |
JP2005075767A (ja) * | 2003-08-29 | 2005-03-24 | Idemitsu Kosan Co Ltd | フォトレジスト基材及びその精製方法、並びにフォトレジスト組成物 |
WO2005097725A1 (ja) * | 2004-04-05 | 2005-10-20 | Idemitsu Kosan Co., Ltd. | カリックスレゾルシナレン化合物、フォトレジスト基材及びその組成物 |
JP4727958B2 (ja) * | 2004-08-19 | 2011-07-20 | 旭有機材工業株式会社 | ノボラック型フェノール樹脂の製造方法 |
UA91036C2 (ru) * | 2004-12-08 | 2010-06-25 | Филип Моррис Продактс С.А. | Упаковка с откидной крышкой, открывающейся в сторону, и звуковой индикацией открытия и/или закрытия |
JP5092445B2 (ja) * | 2007-02-21 | 2012-12-05 | Jsr株式会社 | ナフトールノボラックおよびその誘導体の製造方法 |
EP2295482A4 (en) * | 2008-06-12 | 2013-11-27 | Hitachi Chemical Co Ltd | PROCESS FOR PRODUCING NOVOLAC PHENOLIC RESIN AND SAND COATED WITH RESIN |
KR20160091342A (ko) * | 2013-11-29 | 2016-08-02 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 화합물 또는 수지의 정제방법 |
US10577323B2 (en) * | 2015-03-13 | 2020-03-03 | Mitsubishi Gas Chemical Company, Inc. | Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin |
KR101993923B1 (ko) | 2018-10-10 | 2019-06-28 | 주식회사 제이피에스 | 코일 포장용 밴드의 결속을 위한 용접 시스템 |
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US3838102A (en) * | 1972-12-29 | 1974-09-24 | Gen Electric | Removal of metallic catalyst residue from polyphenylene ethers |
US4237265A (en) * | 1975-09-08 | 1980-12-02 | General Electric Company | Process for catalyst removal from polyphenylene ether reaction solutions |
US4965324A (en) * | 1985-01-11 | 1990-10-23 | The Dow Chemical Company | Substituted phenol-formaldehyde novolac resins containing reduced quantities of 2-functional components and epoxy novolac resins prepared therefrom |
DD247013B1 (de) * | 1986-03-03 | 1989-07-19 | Zwickau Lackharz | Verfahren zur herstellung geloester phenol-formaldehyd-harze nach dem einstufenverfahren mit niedrigem salzgehalt |
EP0251187A3 (en) * | 1986-06-27 | 1988-03-30 | Nippon Zeon Co., Ltd. | Method for purifying novolak resins useful as material for coating on a semiconductor substrate |
JPH0737486B2 (ja) * | 1986-11-18 | 1995-04-26 | 日本ゼオン株式会社 | 半導体基板塗布材料用ポリマ−の精製方法 |
JPH0680119B2 (ja) * | 1986-06-27 | 1994-10-12 | 日本ゼオン株式会社 | ノボラツク樹脂の精製方法 |
JP2536600B2 (ja) * | 1988-08-29 | 1996-09-18 | 日本合成ゴム株式会社 | ノボラック樹脂中の低核体の除去方法 |
-
1989
- 1989-07-15 DE DE3923426A patent/DE3923426A1/de not_active Withdrawn
-
1990
- 1990-07-07 DE DE59010064T patent/DE59010064D1/de not_active Expired - Fee Related
- 1990-07-07 EP EP90112985A patent/EP0409017B1/de not_active Expired - Lifetime
- 1990-07-10 US US07/550,692 patent/US5073622A/en not_active Expired - Lifetime
- 1990-07-13 JP JP18694690A patent/JP3221492B2/ja not_active Expired - Fee Related
- 1990-07-13 KR KR1019900010629A patent/KR0163182B1/ko not_active IP Right Cessation
-
1997
- 1997-01-23 HK HK8697A patent/HK8697A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR0163182B1 (ko) | 1999-01-15 |
HK8697A (en) | 1997-01-31 |
US5073622A (en) | 1991-12-17 |
EP0409017A3 (en) | 1992-04-22 |
JP3221492B2 (ja) | 2001-10-22 |
DE3923426A1 (de) | 1991-01-17 |
EP0409017A2 (de) | 1991-01-23 |
DE59010064D1 (de) | 1996-02-29 |
EP0409017B1 (de) | 1996-01-17 |
JPH0356523A (ja) | 1991-03-12 |
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