HK8697A - Method for the production of novolak resins with low content of metal-ions - Google Patents

Method for the production of novolak resins with low content of metal-ions

Info

Publication number
HK8697A
HK8697A HK8697A HK8697A HK8697A HK 8697 A HK8697 A HK 8697A HK 8697 A HK8697 A HK 8697A HK 8697 A HK8697 A HK 8697A HK 8697 A HK8697 A HK 8697A
Authority
HK
Hong Kong
Prior art keywords
ions
production
metal
low content
novolak resins
Prior art date
Application number
HK8697A
Other languages
English (en)
Inventor
Wojtech Dr Dipl-Chem Bernhard
Niederstaette Dr Dipl-Phys Walter
Thamm Dr Dipl Chem Horst-Dieter
Original Assignee
Hoechst Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoechst Ag filed Critical Hoechst Ag
Publication of HK8697A publication Critical patent/HK8697A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • C08G8/10—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with phenol
HK8697A 1989-07-15 1997-01-23 Method for the production of novolak resins with low content of metal-ions HK8697A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3923426A DE3923426A1 (de) 1989-07-15 1989-07-15 Verfahren zur herstellung von novolak-harzen mit geringem metallionengehalt

Publications (1)

Publication Number Publication Date
HK8697A true HK8697A (en) 1997-01-31

Family

ID=6385103

Family Applications (1)

Application Number Title Priority Date Filing Date
HK8697A HK8697A (en) 1989-07-15 1997-01-23 Method for the production of novolak resins with low content of metal-ions

Country Status (6)

Country Link
US (1) US5073622A (xx)
EP (1) EP0409017B1 (xx)
JP (1) JP3221492B2 (xx)
KR (1) KR0163182B1 (xx)
DE (2) DE3923426A1 (xx)
HK (1) HK8697A (xx)

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US20040018949A1 (en) * 1990-11-05 2004-01-29 Wai Mun Lee Semiconductor process residue removal composition and process
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US6121217A (en) 1990-11-05 2000-09-19 Ekc Technology, Inc. Alkanolamine semiconductor process residue removal composition and process
US5279771A (en) 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
US6000411A (en) * 1990-11-05 1999-12-14 Ekc Technology, Inc. Cleaning compositions for removing etching residue and method of using
US6242400B1 (en) 1990-11-05 2001-06-05 Ekc Technology, Inc. Method of stripping resists from substrates using hydroxylamine and alkanolamine
US7205265B2 (en) 1990-11-05 2007-04-17 Ekc Technology, Inc. Cleaning compositions and methods of use thereof
SG48902A1 (en) * 1991-12-18 1998-05-18 Hoechst Celanese Corp Metal ion reduction in novolak resins
US5580949A (en) * 1991-12-18 1996-12-03 Hoechst Celanese Corporation Metal ion reduction in novolak resins and photoresists
WO1993018437A1 (en) * 1992-03-06 1993-09-16 Hoechst Celanese Corporation Photoresists having a low level of metal ions
US5300628A (en) * 1992-06-29 1994-04-05 Ocg Microelectronic Materials, Inc. Selected chelate resins and their use to remove multivalent metal impurities from resist components
US5830990A (en) * 1992-07-10 1998-11-03 Clariant Finance (Bvi) Limited Low metals perfluorooctanoic acid and top anti-reflective coatings for photoresists
SG52770A1 (en) * 1992-07-10 1998-09-28 Hoechst Celanese Corp Metal ion reduction in top anti-reflective coatings for photoresists
WO1994012912A1 (en) * 1992-11-25 1994-06-09 Hoechst Celanese Corporation Metal ion reduction in bottom anti-reflective coatings for photoresists
US5476750A (en) * 1992-12-29 1995-12-19 Hoechst Celanese Corporation Metal ion reduction in the raw materials and using a Lewis base to control molecular weight of novolak resin to be used in positive photoresists
US5374500A (en) * 1993-04-02 1994-12-20 International Business Machines Corporation Positive photoresist composition containing photoacid generator and use thereof
US7144849B2 (en) * 1993-06-21 2006-12-05 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials
US5443736A (en) * 1993-10-20 1995-08-22 Shipley Company Inc. Purification process
US5525315A (en) * 1993-12-07 1996-06-11 Shipley Company, L.L.C. Process for removing heavy metal ions with a chelating cation exchange resin
JPH07271020A (ja) * 1994-03-18 1995-10-20 Internatl Business Mach Corp <Ibm> ブラックマトリックス形成用感光性組成物、カラーフィルター基板及びそれを用いた液晶表示装置
US5686561A (en) * 1994-08-23 1997-11-11 Hoechst Celanese Corporation Metal ion reduction in novolak resin solution using an anion exchange resin
US5837417A (en) * 1994-12-30 1998-11-17 Clariant Finance (Bvi) Limited Quinone diazide compositions containing low metals p-cresol oligomers and process of producing the composition
US5521052A (en) * 1994-12-30 1996-05-28 Hoechst Celanese Corporation Metal ion reduction in novolak resin using an ion exchange catalyst in a polar solvent and photoresists compositions therefrom
US5614352A (en) * 1994-12-30 1997-03-25 Hoechst Celanese Corporation Metal ion reduction in novolak resins solution in PGMEA by chelating ion exchange resin
US5612304A (en) * 1995-07-07 1997-03-18 Olin Microelectronic Chemicals, Inc. Redox reagent-containing post-etch residue cleaning composition
US5618655A (en) * 1995-07-17 1997-04-08 Olin Corporation Process of reducing trace levels of metal impurities from resist components
US5623042A (en) * 1995-07-19 1997-04-22 Olin Corporation Process for reducing trace levels of metallic impurities in cyclized polyisoprene resin
US5693749A (en) * 1995-09-20 1997-12-02 Hoechst Celanese Corporation Fractionation of phenol formaldehyde condensate and photoresist compositions produced therefrom
US5750031A (en) * 1995-09-26 1998-05-12 Clariant Finance (Bvi) Limited Process for producing surfactant having a low metal ion level and developer produced therefrom
US5656413A (en) * 1995-09-28 1997-08-12 Hoechst Celanese Corporation Low metal ion containing 4,4'-[1-[4-[1-(4-Hydroxyphenyl)-1-methylethyl]phenyl]ethylidene]bisphe nol and photoresist compositions therefrom
US5962183A (en) * 1995-11-27 1999-10-05 Clariant Finance (Bvi) Limited Metal ion reduction in photoresist compositions by chelating ion exchange resin
US5665517A (en) * 1996-01-11 1997-09-09 Hoechst Celanese Corporation Acidic ion exchange resin as a catalyst to synthesize a novolak resin and photoresist composition therefrom
US5910559A (en) * 1996-12-18 1999-06-08 Clariant Finance (Bvi) Limited Fractionated novolak resin from cresol-formaldehyde reaction mixture and photoresist composition therefrom
US5936071A (en) * 1998-02-02 1999-08-10 Clariant Finance (Bvi) Limited Process for making a photoactive compound and photoresist therefrom
DE19809998A1 (de) * 1998-03-09 1999-09-16 Buna Sow Leuna Olefinverb Gmbh Verfahren zur Abtrennung organischer Metallsalze aus einer Polymerlösung
US5955570A (en) * 1998-07-01 1999-09-21 Clariant International Ltd. Trace metal ion reduction by Ion Exchange Pack
JP2002097219A (ja) * 2000-09-21 2002-04-02 Sumitomo Chem Co Ltd 金属含量の低減されたポリ（メタ）アクリレート類の製造方法
US20060172231A1 (en) * 2002-08-08 2006-08-03 Fujifilm Electronic Materials U.S.A., Inc Use of an oxidizer to improve trace metals removal from photoresist and photoresist components
JP2005075767A (ja) * 2003-08-29 2005-03-24 Idemitsu Kosan Co Ltd フォトレジスト基材及びその精製方法、並びにフォトレジスト組成物
EP1734032A4 (en) * 2004-04-05 2008-04-02 Idemitsu Kosan Co CALIX RESININCINAR COMPOUNDS, PHOTORESIST BASE MATERIALS AND COMPOSITIONS THEREOF
JP4727958B2 (ja) * 2004-08-19 2011-07-20 旭有機材工業株式会社 ノボラック型フェノール樹脂の製造方法
UA91036C2 (ru) * 2004-12-08 2010-06-25 Филип Моррис Продактс С.А. Упаковка с откидной крышкой, открывающейся в сторону, и звуковой индикацией открытия и/или закрытия
JP5092445B2 (ja) * 2007-02-21 2012-12-05 Ｊｓｒ株式会社 ナフトールノボラックおよびその誘導体の製造方法
US8586698B2 (en) * 2008-06-12 2013-11-19 Hitachi Chemical Company, Ltd. Manufacturing method for phenolic novolac resin and resin-coated sand
TWI633096B (zh) * 2013-11-29 2018-08-21 三菱瓦斯化學股份有限公司 化合物或樹脂之精製方法
SG11201706660WA (en) * 2015-03-13 2017-09-28 Mitsubishi Gas Chemical Co Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin
KR101993923B1 (ko) 2018-10-10 2019-06-28 주식회사 제이피에스 코일 포장용 밴드의 결속을 위한 용접 시스템

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Publication number Priority date Publication date Assignee Title
US3838102A (en) * 1972-12-29 1974-09-24 Gen Electric Removal of metallic catalyst residue from polyphenylene ethers
US4237265A (en) * 1975-09-08 1980-12-02 General Electric Company Process for catalyst removal from polyphenylene ether reaction solutions
US4965324A (en) * 1985-01-11 1990-10-23 The Dow Chemical Company Substituted phenol-formaldehyde novolac resins containing reduced quantities of 2-functional components and epoxy novolac resins prepared therefrom
DD247013B1 (de) * 1986-03-03 1989-07-19 Zwickau Lackharz Verfahren zur herstellung geloester phenol-formaldehyd-harze nach dem einstufenverfahren mit niedrigem salzgehalt
JPH0680119B2 (ja) * 1986-06-27 1994-10-12 日本ゼオン株式会社 ノボラツク樹脂の精製方法
JPH0737486B2 (ja) * 1986-11-18 1995-04-26 日本ゼオン株式会社 半導体基板塗布材料用ポリマ−の精製方法
EP0251187A3 (en) * 1986-06-27 1988-03-30 Nippon Zeon Co., Ltd. Method for purifying novolak resins useful as material for coating on a semiconductor substrate
JP2536600B2 (ja) * 1988-08-29 1996-09-18 日本合成ゴム株式会社 ノボラック樹脂中の低核体の除去方法

Also Published As

Publication number Publication date
KR910002925A (ko) 1991-02-26
EP0409017B1 (de) 1996-01-17
KR0163182B1 (ko) 1999-01-15
DE3923426A1 (de) 1991-01-17
EP0409017A2 (de) 1991-01-23
EP0409017A3 (en) 1992-04-22
DE59010064D1 (de) 1996-02-29
JP3221492B2 (ja) 2001-10-22
JPH0356523A (ja) 1991-03-12
US5073622A (en) 1991-12-17

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)