KR910002033B1 - 메모리 셀의 센스앰프 구동회로 - Google Patents

메모리 셀의 센스앰프 구동회로 Download PDF

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Publication number
KR910002033B1
KR910002033B1 KR1019880008607A KR880008607A KR910002033B1 KR 910002033 B1 KR910002033 B1 KR 910002033B1 KR 1019880008607 A KR1019880008607 A KR 1019880008607A KR 880008607 A KR880008607 A KR 880008607A KR 910002033 B1 KR910002033 B1 KR 910002033B1
Authority
KR
South Korea
Prior art keywords
mos
sensing
mos transistor
transistor
restore
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019880008607A
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English (en)
Korean (ko)
Other versions
KR900002323A (ko
Inventor
서승모
Original Assignee
삼성전자 주식회사
강진구
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사, 강진구 filed Critical 삼성전자 주식회사
Priority to KR1019880008607A priority Critical patent/KR910002033B1/ko
Priority to FR8906746A priority patent/FR2634047B1/fr
Priority to JP1129029A priority patent/JPH0752585B2/ja
Priority to NL8901303A priority patent/NL193008C/nl
Priority to DE3916972A priority patent/DE3916972A1/de
Priority to US07/358,679 priority patent/US5140199A/en
Priority to GB8913761A priority patent/GB2220810B/en
Publication of KR900002323A publication Critical patent/KR900002323A/ko
Application granted granted Critical
Publication of KR910002033B1 publication Critical patent/KR910002033B1/ko
Priority to HK97101556A priority patent/HK1000029A1/xx
Expired legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
KR1019880008607A 1988-07-11 1988-07-11 메모리 셀의 센스앰프 구동회로 Expired KR910002033B1 (ko)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1019880008607A KR910002033B1 (ko) 1988-07-11 1988-07-11 메모리 셀의 센스앰프 구동회로
FR8906746A FR2634047B1 (fr) 1988-07-11 1989-05-23 Pilote d'amplificateur de lecture pour dispositif a memoire
NL8901303A NL193008C (nl) 1988-07-11 1989-05-24 Waarneem-versterkeraandrijfelement voor een geheugeninrichting.
DE3916972A DE3916972A1 (de) 1988-07-11 1989-05-24 Leseverstaerkertreiber fuer speichervorrichtung
JP1129029A JPH0752585B2 (ja) 1988-07-11 1989-05-24 記憶素子内の読取増幅駆動部
US07/358,679 US5140199A (en) 1988-07-11 1989-05-30 Sense amplifier driver for memory device having reduced power dissipation
GB8913761A GB2220810B (en) 1988-07-11 1989-06-15 Sense amplifier driver for memory device
HK97101556A HK1000029A1 (en) 1988-07-11 1997-07-14 Sense amplifier driver for memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880008607A KR910002033B1 (ko) 1988-07-11 1988-07-11 메모리 셀의 센스앰프 구동회로

Publications (2)

Publication Number Publication Date
KR900002323A KR900002323A (ko) 1990-02-28
KR910002033B1 true KR910002033B1 (ko) 1991-03-30

Family

ID=19275985

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880008607A Expired KR910002033B1 (ko) 1988-07-11 1988-07-11 메모리 셀의 센스앰프 구동회로

Country Status (8)

Country Link
US (1) US5140199A (enExample)
JP (1) JPH0752585B2 (enExample)
KR (1) KR910002033B1 (enExample)
DE (1) DE3916972A1 (enExample)
FR (1) FR2634047B1 (enExample)
GB (1) GB2220810B (enExample)
HK (1) HK1000029A1 (enExample)
NL (1) NL193008C (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920001325B1 (ko) * 1989-06-10 1992-02-10 삼성전자 주식회사 메모리 소자내의 센스 앰프 드라이버
JP2789779B2 (ja) * 1990-04-14 1998-08-20 日本電気株式会社 メモリ装置
US5210450A (en) * 1990-04-16 1993-05-11 Tektronix, Inc. Active selectable digital delay circuit
FR2662844B1 (fr) * 1990-05-23 1993-11-26 Samsung Electronics Co Ltd Circuit d'attaque d'amplification de detection pour dispositif de memoire a semi-conducteurs.
KR920010346B1 (ko) * 1990-05-23 1992-11-27 삼성전자 주식회사 반도체 메모리의 센스앰프 구동회로
KR960002004B1 (ko) * 1991-02-19 1996-02-09 가부시키가이샤 도시바 기록검증 제어회로를 갖춘 전기적으로 소거 및 프로그램가능한 독출전용 기억장치
US5220221A (en) * 1992-03-06 1993-06-15 Micron Technology, Inc. Sense amplifier pulldown circuit for minimizing ground noise at high power supply voltages
US5394037A (en) * 1993-04-05 1995-02-28 Lattice Semiconductor Corporation Sense amplifiers and sensing methods
KR960009956B1 (ko) * 1994-02-16 1996-07-25 현대전자산업 주식회사 반도체 소자의 감지 증폭기
KR0122108B1 (ko) * 1994-06-10 1997-12-05 윤종용 반도체 메모리 장치의 비트라인 센싱회로 및 그 방법
US5528178A (en) * 1995-03-31 1996-06-18 International Business Machines Corporation Sense and hold amplifier
US5760626A (en) * 1996-04-01 1998-06-02 Motorola Inc. BICMOS latch circuit for latching differential signals
JP3228154B2 (ja) * 1996-10-18 2001-11-12 日本電気株式会社 半導体記憶装置
US6002634A (en) * 1997-11-14 1999-12-14 Ramtron International Corporation Sense amplifier latch driver circuit for a 1T/1C ferroelectric memory
US6195302B1 (en) 1999-02-05 2001-02-27 United Memories, Inc. Dual slope sense clock generator
KR100546333B1 (ko) * 2003-06-25 2006-01-26 삼성전자주식회사 감지 증폭기 드라이버 및 이를 구비하는 반도체 장치
RU2388077C1 (ru) * 2008-07-22 2010-04-27 Государственное образовательное учреждение высшего профессионального образования Московский технический университет связи и информатики Усилитель считывания сигналов с магнитных карт

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3943496A (en) * 1974-09-09 1976-03-09 Rockwell International Corporation Memory clocking system
JPS5429936A (en) * 1977-08-10 1979-03-06 Hitachi Ltd Pre-amplifier
US4295062A (en) * 1979-04-02 1981-10-13 National Semiconductor Corporation CMOS Schmitt trigger and oscillator
JPS58156226A (ja) * 1982-03-12 1983-09-17 Hitachi Ltd 遅延回路
US4508978A (en) * 1982-09-16 1985-04-02 Texas Instruments Incorporated Reduction of gate oxide breakdown for booted nodes in MOS integrated circuits
JPS6070592A (ja) * 1983-09-28 1985-04-22 Fujitsu Ltd メモリの書込回路
US4707626A (en) * 1984-07-26 1987-11-17 Texas Instruments Incorporated Internal time-out circuit for CMOS dynamic RAM
US4656612A (en) * 1984-11-19 1987-04-07 Inmos Corporation Dram current control technique
JPS61178796A (ja) * 1985-02-01 1986-08-11 Mitsubishi Electric Corp Ｉｃメモリ
US4694205A (en) * 1985-06-03 1987-09-15 Advanced Micro Devices, Inc. Midpoint sense amplification scheme for a CMOS DRAM
US4638187A (en) * 1985-10-01 1987-01-20 Vtc Incorporated CMOS output buffer providing high drive current with minimum output signal distortion
US4649295A (en) * 1986-01-13 1987-03-10 Motorola, Inc. BIMOS logic gate
US4749882A (en) * 1986-07-25 1988-06-07 Digital Equipment Corporation Apparatus and method for applying rapid transient signals to components on a printed circuit board
US4771195A (en) * 1986-08-29 1988-09-13 Texas Instruments Incorporated Integrated circuit to reduce switching noise
JP2557411B2 (ja) * 1986-10-01 1996-11-27 株式会社東芝 半導体集積回路
JPS63275223A (ja) * 1987-05-06 1988-11-11 Nec Corp 出力バツフア−回路
US4829199A (en) * 1987-07-13 1989-05-09 Ncr Corporation Driver circuit providing load and time adaptive current
US4855623A (en) * 1987-11-05 1989-08-08 Texas Instruments Incorporated Output buffer having programmable drive current

Also Published As

Publication number Publication date
DE3916972A1 (de) 1990-01-18
FR2634047A1 (fr) 1990-01-12
FR2634047B1 (fr) 1993-04-09
NL193008B (nl) 1998-03-02
DE3916972C2 (enExample) 1991-02-14
KR900002323A (ko) 1990-02-28
GB8913761D0 (en) 1989-08-02
GB2220810A (en) 1990-01-17
JPH0261892A (ja) 1990-03-01
NL8901303A (nl) 1990-02-01
HK1000029A1 (en) 1997-10-09
NL193008C (nl) 1998-07-03
GB2220810B (en) 1992-07-15
JPH0752585B2 (ja) 1995-06-05
US5140199A (en) 1992-08-18

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