KR900013818A - 고주파 플라즈마 발생용 알루미늄 전극 및 플라즈마 발생방법 - Google Patents

고주파 플라즈마 발생용 알루미늄 전극 및 플라즈마 발생방법 Download PDF

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Publication number
KR900013818A
KR900013818A KR1019900001723A KR900001723A KR900013818A KR 900013818 A KR900013818 A KR 900013818A KR 1019900001723 A KR1019900001723 A KR 1019900001723A KR 900001723 A KR900001723 A KR 900001723A KR 900013818 A KR900013818 A KR 900013818A
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South Korea
Prior art keywords
electrode
plasma generation
high frequency
plasma
microns
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KR1019900001723A
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English (en)
Inventor
테루오 미야시타
코이치 이토
Original Assignee
무가야마 시게키
니뽄 게이킨조쿠 가부시기가이샤
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Application filed by 무가야마 시게키, 니뽄 게이킨조쿠 가부시기가이샤 filed Critical 무가야마 시게키
Publication of KR900013818A publication Critical patent/KR900013818A/ko

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

내용 없음

Description

고주파 플라즈마 발생용 알루미늄 전극 및 플라즈마 발생방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (5)

  1. 고주파 플라즈마 발생용 전극에 있어서, 전극의 쌍이 감소된 압력처리 챔버내에 상호 면하게 떨어져서 평행하게 설치되고, 그 사이에 단파전류가 플라즈마를 발생하도록 인가되며, 상기 전극은 알루미늄 또는 알루미늄 합금에서 선택된 물질과, 그 물질상에 크롬산 양극산화 표면 필름층으로 이루어진 것을 특징으로 하는 고주파 플라즈마 발생용 전극.
  2. 제1항에 있어서, 상기 층은 5―15마이크론의 두께를 가지는 것을 특징으로 하는 고주파 플라즈마 발생용 전극.
  3. 제1항에 있어서, 상기 물질을 적어도 99.99중량%의 순도를 가지는 고순도 알류미늄이거나 상기 고순도 알루미늄에서 제조한 알루미늄 합금이고, 2마이크론을 넘지 않는 직경을 가지는 어렵게 양극산화할 수 있는 입자를 포함하는 것을 특징으로 하는 고주파 플라즈마 발생용 전극.
  4. 플라즈마 발생방법에 있어서, 알루미늄 또는 알루미늄 합금으로 베이스와 상기 베이스상에 크롬산 양극산화 표면 필름층으로 이루어진 상호 면하게 떨어져서 편행한 전극쌍 사이에 감소된 압력하의 플라즈마 발생단파 전류를 인가하는 공정으로 이루어진 것을 특징으로 하는 플라즈마 발생방법.
  5. 제4항에 있어서, 상기 표면필름층은 약 5―15마이크론의 두께를 가지는 것을 특징으로 하는 플라즈마 발생방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900001723A 1989-02-14 1990-02-13 고주파 플라즈마 발생용 알루미늄 전극 및 플라즈마 발생방법 KR900013818A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1-32710 1989-02-14
JP1032710A JPH02213480A (ja) 1989-02-14 1989-02-14 高周波プラズマ発生用アルミニウム電極

Publications (1)

Publication Number Publication Date
KR900013818A true KR900013818A (ko) 1990-09-06

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900001723A KR900013818A (ko) 1989-02-14 1990-02-13 고주파 플라즈마 발생용 알루미늄 전극 및 플라즈마 발생방법

Country Status (4)

Country Link
US (1) US5039388A (ko)
EP (1) EP0383550A3 (ko)
JP (1) JPH02213480A (ko)
KR (1) KR900013818A (ko)

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KR100299569B1 (ko) * 1994-02-03 2001-12-01 히가시 데쓰로 알루미늄부재의표면처리방법및플라즈마처리장치

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US6242111B1 (en) 1992-09-17 2001-06-05 Applied Materials, Inc. Anodized aluminum susceptor for forming integrated circuit structures and method of making anodized aluminum susceptor
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US5756222A (en) 1994-08-15 1998-05-26 Applied Materials, Inc. Corrosion-resistant aluminum article for semiconductor processing equipment
KR100473691B1 (ko) * 1994-11-16 2005-04-14 가부시키가이샤 고베 세이코쇼 Al또는Al합금제진공챔버부재
US6060397A (en) * 1995-07-14 2000-05-09 Applied Materials, Inc. Gas chemistry for improved in-situ cleaning of residue for a CVD apparatus
JPH0992641A (ja) * 1995-09-22 1997-04-04 Mitsubishi Electric Corp プラズマエッチング装置
US6143124A (en) 1997-08-22 2000-11-07 Micron Technology, Inc. Apparatus and method for generating a plasma from an electromagnetic field having a lissajous pattern
KR100397860B1 (ko) * 1997-09-22 2003-12-18 카가쿠기쥬쯔죠 킨조쿠자이료 기쥬쯔켄큐죠 반응성이온에칭법및그장치
US6395128B2 (en) 1998-02-19 2002-05-28 Micron Technology, Inc. RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition
US6112697A (en) * 1998-02-19 2000-09-05 Micron Technology, Inc. RF powered plasma enhanced chemical vapor deposition reactor and methods
US6699375B1 (en) 2000-06-29 2004-03-02 Applied Materials, Inc. Method of extending process kit consumable recycling life
US6562684B1 (en) 2000-08-30 2003-05-13 Micron Technology, Inc. Methods of forming dielectric materials
KR100375984B1 (ko) * 2001-03-06 2003-03-15 삼성전자주식회사 플레이트 어셈블리 및 이를 갖는 가공 장치
JP2002343787A (ja) * 2001-05-17 2002-11-29 Research Institute Of Innovative Technology For The Earth プラズマ処理装置およびそのクリーニング方法
US7033447B2 (en) 2002-02-08 2006-04-25 Applied Materials, Inc. Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus
US7048814B2 (en) * 2002-02-08 2006-05-23 Applied Materials, Inc. Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus
US6659331B2 (en) * 2002-02-26 2003-12-09 Applied Materials, Inc Plasma-resistant, welded aluminum structures for use in semiconductor apparatus
US6565984B1 (en) * 2002-05-28 2003-05-20 Applied Materials Inc. Clean aluminum alloy for semiconductor processing equipment
KR100476136B1 (ko) * 2002-12-02 2005-03-10 주식회사 셈테크놀러지 대기압 플라즈마를 이용한 표면처리장치
US20050252529A1 (en) * 2004-05-12 2005-11-17 Ridgeway Robert G Low temperature CVD chamber cleaning using dilute NF3
RU2324014C2 (ru) * 2006-06-05 2008-05-10 Анатолий Иванович Мамаев Способ получения покрытий на деталях из металлов и сплавов в режиме компрессионного микродугового оксидирования и устройство для его осуществления
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US9039791B2 (en) 2012-05-25 2015-05-26 Basf Se Use of a reaction product of carboxylic acids with aliphatic polyamines for improving or boosting the separation of water from fuel oils
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KR101909453B1 (ko) * 2016-07-05 2018-10-18 에이비엠 주식회사 상부 전극 및 이를 구비한 공정챔버 및 공정챔버에 의해 제조되는 기판

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100299569B1 (ko) * 1994-02-03 2001-12-01 히가시 데쓰로 알루미늄부재의표면처리방법및플라즈마처리장치

Also Published As

Publication number Publication date
US5039388A (en) 1991-08-13
EP0383550A3 (en) 1991-08-21
JPH02213480A (ja) 1990-08-24
EP0383550A2 (en) 1990-08-22

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