KR900010947A - 반도체 장치의 제조방법 - Google Patents

반도체 장치의 제조방법

Info

Publication number
KR900010947A
KR900010947A KR1019880016531A KR880016531A KR900010947A KR 900010947 A KR900010947 A KR 900010947A KR 1019880016531 A KR1019880016531 A KR 1019880016531A KR 880016531 A KR880016531 A KR 880016531A KR 900010947 A KR900010947 A KR 900010947A
Authority
KR
South Korea
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
KR1019880016531A
Other languages
English (en)
Other versions
KR910008978B1 (ko
Inventor
김병렬
최수한
Original Assignee
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사 filed Critical 삼성전자 주식회사
Priority to KR1019880016531A priority Critical patent/KR910008978B1/ko
Publication of KR900010947A publication Critical patent/KR900010947A/ko
Application granted granted Critical
Publication of KR910008978B1 publication Critical patent/KR910008978B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
KR1019880016531A 1988-12-12 1988-12-12 반도체 장치의 제조방법 KR910008978B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019880016531A KR910008978B1 (ko) 1988-12-12 1988-12-12 반도체 장치의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880016531A KR910008978B1 (ko) 1988-12-12 1988-12-12 반도체 장치의 제조방법

Publications (2)

Publication Number Publication Date
KR900010947A true KR900010947A (ko) 1990-07-11
KR910008978B1 KR910008978B1 (ko) 1991-10-26

Family

ID=19280067

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880016531A KR910008978B1 (ko) 1988-12-12 1988-12-12 반도체 장치의 제조방법

Country Status (1)

Country Link
KR (1) KR910008978B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100908824B1 (ko) * 2006-12-27 2009-07-21 주식회사 하이닉스반도체 비휘발성 메모리 소자 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100908824B1 (ko) * 2006-12-27 2009-07-21 주식회사 하이닉스반도체 비휘발성 메모리 소자 제조방법

Also Published As

Publication number Publication date
KR910008978B1 (ko) 1991-10-26

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Legal Events

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