KR900008765A - 단일 트랜지스터 메모리 셀과 함께 사용하는 고속차동 센스 증폭기 - Google Patents

단일 트랜지스터 메모리 셀과 함께 사용하는 고속차동 센스 증폭기

Info

Publication number
KR900008765A
KR900008765A KR1019890016949A KR890016949A KR900008765A KR 900008765 A KR900008765 A KR 900008765A KR 1019890016949 A KR1019890016949 A KR 1019890016949A KR 890016949 A KR890016949 A KR 890016949A KR 900008765 A KR900008765 A KR 900008765A
Authority
KR
South Korea
Prior art keywords
memory cells
sense amplifier
speed differential
single transistor
differential sense
Prior art date
Application number
KR1019890016949A
Other languages
English (en)
Other versions
KR0139101B1 (ko
Inventor
에이.엠 애민 알라엘딘
에모토 베르나드
Original Assignee
내쇼날 세미컨덕터 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 내쇼날 세미컨덕터 코포레이션 filed Critical 내쇼날 세미컨덕터 코포레이션
Publication of KR900008765A publication Critical patent/KR900008765A/ko
Application granted granted Critical
Publication of KR0139101B1 publication Critical patent/KR0139101B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
KR1019890016949A 1988-11-23 1989-11-22 단일 트랜지스터 메모리 셀과 함께 사용하는 고속차동 센스 증폭기 KR0139101B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US27636388A 1988-11-23 1988-11-23
US276,363 1994-07-18

Publications (2)

Publication Number Publication Date
KR900008765A true KR900008765A (ko) 1990-06-03
KR0139101B1 KR0139101B1 (ko) 1998-06-01

Family

ID=23056356

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1019890010821A KR0137768B1 (ko) 1988-11-23 1989-07-29 단일 트랜지스터 메모리 셀과 함께 사용하는 고속 자동 센스 증폭기
KR1019890016949A KR0139101B1 (ko) 1988-11-23 1989-11-22 단일 트랜지스터 메모리 셀과 함께 사용하는 고속차동 센스 증폭기

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR1019890010821A KR0137768B1 (ko) 1988-11-23 1989-07-29 단일 트랜지스터 메모리 셀과 함께 사용하는 고속 자동 센스 증폭기

Country Status (6)

Country Link
US (1) US5117394A (ko)
EP (1) EP0370432B1 (ko)
JP (1) JPH02252196A (ko)
KR (2) KR0137768B1 (ko)
CA (1) CA1325474C (ko)
DE (1) DE68915954T2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100295301B1 (ko) * 1997-06-18 2001-07-12 가네꼬 히사시 데이터비트의파괴없이입/출력마스킹기능을갖는반도체메모리장치

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5237534A (en) * 1989-04-27 1993-08-17 Kabushiki Kaisha Toshiba Data sense circuit for a semiconductor nonvolatile memory device
IT1246241B (it) * 1990-02-23 1994-11-17 Sgs Thomson Microelectronics Circuito per la lettura dell'informazione contenuta in celle di memoria non volatili
FR2665792B1 (fr) * 1990-08-08 1993-06-11 Sgs Thomson Microelectronics Memoire integree pourvue de moyens de test ameliores.
DE69026828T2 (de) * 1990-12-13 1996-10-02 Sgs Thomson Microelectronics Verbesserte Abfühlschaltung für Speicheranordnungen, wie nichtflüchtige Speicher, mit verbesserter Abfühlunterscheidung
JP2723695B2 (ja) * 1991-07-02 1998-03-09 シャープ株式会社 半導体記憶装置
DE69224125T2 (de) * 1991-09-26 1998-08-27 St Microelectronics Srl Leseverstärker
US5245574A (en) * 1991-12-23 1993-09-14 Intel Corporation Apparatus for increasing the speed of operation of non-volatile memory arrays
FR2690751B1 (fr) * 1992-04-30 1994-06-17 Sgs Thomson Microelectronics Procede et circuit de detection de fuites de courant dans une ligne de bit.
JPH0612860A (ja) * 1992-06-29 1994-01-21 Toshiba Corp 半導体記憶装置
US5349302A (en) * 1993-05-13 1994-09-20 Honeywell Inc. Sense amplifier input stage for single array memory
EP0714546B1 (en) * 1993-05-28 2000-02-02 Macronix International Co., Ltd. Erase and program verification circuit for non-volatile memory
US5414664A (en) * 1993-05-28 1995-05-09 Macronix International Co., Ltd. Flash EPROM with block erase flags for over-erase protection
US5463586A (en) * 1993-05-28 1995-10-31 Macronix International Co., Ltd. Erase and program verification circuit for non-volatile memory
US5521874A (en) * 1994-12-14 1996-05-28 Sun Microsystems, Inc. High speed differential to single ended sense amplifier
US5638322A (en) * 1995-07-19 1997-06-10 Cypress Semiconductor Corp. Apparatus and method for improving common mode noise rejection in pseudo-differential sense amplifiers
US5608681A (en) * 1996-01-22 1997-03-04 Lsi Logic Corporation Fast memory sense system
US5726934A (en) * 1996-04-09 1998-03-10 Information Storage Devices, Inc. Method and apparatus for analog reading values stored in floating gate structures
US5818764A (en) * 1997-02-06 1998-10-06 Macronix International Co., Ltd. Block-level wordline enablement to reduce negative wordline stress
US6021083A (en) * 1997-12-05 2000-02-01 Macronix International Co., Ltd. Block decoded wordline driver with positive and negative voltage modes
US5949728A (en) * 1997-12-12 1999-09-07 Scenix Semiconductor, Inc. High speed, noise immune, single ended sensing scheme for non-volatile memories
US6906951B2 (en) * 2001-06-14 2005-06-14 Multi Level Memory Technology Bit line reference circuits for binary and multiple-bit-per-cell memories
US7123537B2 (en) * 2002-03-15 2006-10-17 Macronix International Co., Ltd. Decoder arrangement of a memory cell array
KR100843947B1 (ko) * 2007-07-04 2008-07-03 주식회사 하이닉스반도체 1-트랜지스터형 디램

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS601712B2 (ja) * 1980-12-04 1985-01-17 株式会社東芝 半導体記憶装置
US4725984A (en) * 1984-02-21 1988-02-16 Seeq Technology, Inc. CMOS eprom sense amplifier
JPS60191499A (ja) * 1984-03-09 1985-09-28 Toshiba Corp ダイナミツク型ランダムアクセスメモリ
JPS613390A (ja) * 1984-06-15 1986-01-09 Hitachi Ltd 記憶装置
US4654831A (en) * 1985-04-11 1987-03-31 Advanced Micro Devices, Inc. High speed CMOS current sense amplifier
JPS62197996A (ja) * 1986-02-24 1987-09-01 Toshiba Corp 半導体メモリのセンスアンプ
US4903237A (en) * 1988-08-02 1990-02-20 Catalyst Semiconductor, Inc. Differential sense amplifier circuit for high speed ROMS, and flash memory devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100295301B1 (ko) * 1997-06-18 2001-07-12 가네꼬 히사시 데이터비트의파괴없이입/출력마스킹기능을갖는반도체메모리장치

Also Published As

Publication number Publication date
EP0370432A2 (en) 1990-05-30
CA1325474C (en) 1993-12-21
EP0370432B1 (en) 1994-06-08
JPH02252196A (ja) 1990-10-09
KR0139101B1 (ko) 1998-06-01
KR900003889A (ko) 1990-03-27
US5117394A (en) 1992-05-26
DE68915954T2 (de) 1994-12-22
EP0370432A3 (en) 1991-01-16
DE68915954D1 (de) 1994-07-14
KR0137768B1 (ko) 1998-06-01

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