KR900007682B1 - 반도체기판의 단차부 매립방법 - Google Patents

반도체기판의 단차부 매립방법 Download PDF

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Publication number
KR900007682B1
KR900007682B1 KR1019870010355A KR870010355A KR900007682B1 KR 900007682 B1 KR900007682 B1 KR 900007682B1 KR 1019870010355 A KR1019870010355 A KR 1019870010355A KR 870010355 A KR870010355 A KR 870010355A KR 900007682 B1 KR900007682 B1 KR 900007682B1
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KR
South Korea
Prior art keywords
film
stepped portion
layer
sio
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019870010355A
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English (en)
Korean (ko)
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KR880004562A (ko
Inventor
겐슈 후세
겐지 다데이와
이찌로오 나까오
히데아끼 시모다
Original Assignee
마쯔시다덴기산교 가부시기가이샤
다니이 아끼오
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 마쯔시다덴기산교 가부시기가이샤, 다니이 아끼오 filed Critical 마쯔시다덴기산교 가부시기가이샤
Publication of KR880004562A publication Critical patent/KR880004562A/ko
Application granted granted Critical
Publication of KR900007682B1 publication Critical patent/KR900007682B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1019870010355A 1986-09-19 1987-09-18 반도체기판의 단차부 매립방법 Expired KR900007682B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP223058 1986-09-19
JP61-223058 1986-09-19
JP61223058A JPS6377122A (ja) 1986-09-19 1986-09-19 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR880004562A KR880004562A (ko) 1988-06-07
KR900007682B1 true KR900007682B1 (ko) 1990-10-18

Family

ID=16792172

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870010355A Expired KR900007682B1 (ko) 1986-09-19 1987-09-18 반도체기판의 단차부 매립방법

Country Status (3)

Country Link
US (1) US4764483A (enExample)
JP (1) JPS6377122A (enExample)
KR (1) KR900007682B1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63202067A (ja) * 1987-02-17 1988-08-22 Mitsubishi Electric Corp 半導体装置の製造方法
US4810669A (en) * 1987-07-07 1989-03-07 Oki Electric Industry Co., Ltd. Method of fabricating a semiconductor device
JP2820187B2 (ja) * 1992-04-16 1998-11-05 三星電子 株式会社 半導体装置の製造方法
KR0121297B1 (en) * 1992-04-16 1997-11-15 Fujitsu Ltd Semiconductor device and process of producing the same
JPH09167753A (ja) * 1995-08-14 1997-06-24 Toshiba Corp 半導体基板の表面の平坦化方法とその装置
US5863828A (en) * 1996-09-25 1999-01-26 National Semiconductor Corporation Trench planarization technique
US6440644B1 (en) 1997-10-15 2002-08-27 Kabushiki Kaisha Toshiba Planarization method and system using variable exposure
JP4530296B2 (ja) 2008-04-09 2010-08-25 Ｎｅｃアクセステクニカ株式会社 角度可変構造
CN113410130B (zh) * 2021-06-15 2023-03-21 西安微电子技术研究所 一种沟槽填充介质后的平坦化回刻方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3976524A (en) * 1974-06-17 1976-08-24 Ibm Corporation Planarization of integrated circuit surfaces through selective photoresist masking
US4274909A (en) * 1980-03-17 1981-06-23 International Business Machines Corporation Method for forming ultra fine deep dielectric isolation
US4389281A (en) * 1980-12-16 1983-06-21 International Business Machines Corporation Method of planarizing silicon dioxide in semiconductor devices
SE8100161L (sv) * 1981-01-13 1982-07-14 Boliden Ab Pumpbar vattenreningskomposition innehallande jern(ii)sulfat och forfarande for dess framstellning
JPS57204135A (en) * 1981-06-10 1982-12-14 Toshiba Corp Manufacture of semiconductor device
JPS5848936A (ja) * 1981-09-10 1983-03-23 Fujitsu Ltd 半導体装置の製造方法
JPS58210634A (ja) * 1982-05-31 1983-12-07 Toshiba Corp 半導体装置の製造方法
JPS59129438A (ja) * 1983-01-14 1984-07-25 Toshiba Corp 半導体装置の製造方法
JPS59167030A (ja) * 1983-03-11 1984-09-20 Toshiba Corp 半導体装置の製造方法
US4662986A (en) * 1985-06-27 1987-05-05 Signetics Corporation Planarization method and technique for isolating semiconductor islands

Also Published As

Publication number Publication date
JPS6377122A (ja) 1988-04-07
KR880004562A (ko) 1988-06-07
JPH0410222B2 (enExample) 1992-02-24
US4764483A (en) 1988-08-16

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