KR900005630A - 비디오 메모리장치 - Google Patents
비디오 메모리장치 Download PDFInfo
- Publication number
- KR900005630A KR900005630A KR1019890013571A KR890013571A KR900005630A KR 900005630 A KR900005630 A KR 900005630A KR 1019890013571 A KR1019890013571 A KR 1019890013571A KR 890013571 A KR890013571 A KR 890013571A KR 900005630 A KR900005630 A KR 900005630A
- Authority
- KR
- South Korea
- Prior art keywords
- ram
- sams
- unit
- partial
- memory device
- Prior art date
Links
- 239000013545 self-assembled monolayer Substances 0.000 claims 9
- 238000000682 scanning probe acoustic microscopy Methods 0.000 claims 7
- 238000000034 method Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1075—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for multiport memories each having random access ports and serial ports, e.g. video RAM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예에 따른 비디오메모리장치의 설명도,
제2도 및 제3도는 제1도의 구성중 RAM과 SAM간의 데이터전송의 일례 및 다른예를 나타낸 블럭도.
Claims (3)
- RAM(2)과 SAM(4A, 4B)을 아울러 갖추고 있되, 상기 RAM(2)은 행어드레스 및 열어드레스를 지정함으로써 1비트데이터를 입출력하는 1어장의 부분 RAM이 복수개 설치되어 복수어장을 갖는 것으로 구성되고. 상기 SAM(4A, 4B)은 상기 각 부분 RAM(2)과 데이터를 전송해서 데이터를 시리얼로 입출력하는 복수개의 단위 SAM으로 구성되며, 상기 각 부분 RAM(2)에 각각 상기 단위 SAM이 복수개(4A,4B) 접속되어 상기 부분 RAM(2)의 1비트입출력에 대해 상기 각 부분 RAM(2)이 복수비트의 입출력을 행하도록된 것을 특징으로 하는 비디오메모리장치.
- 제1항에 있어서, 상기 어떤 부분 RAM에 대해 상기 어떤 복수개의 단위 SAM을 접속시킬때 상기 어떤 부분 RAM의 열을 상기 단위 SAM과 동수인 복수개의 열군으로 분할해서 그들 열군과 상기 복수개의 단위 SAM을 1 : 1로 접속시킨 것을 특징으로 하는 비디오메모리장치.
- 제1항에 있어서, 상기 어떤 부분 RAM에 대해 상기 어떤 복수개의 단위 SAM을 접속시킬 때 상기 어떤 부분 RAM의 각 열을 상기 복수개의 단위 SAM 각각에 대해 다중으로 접속시킨 것을 특징으로 하는 비디오메모리장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP88-237396 | 1988-09-21 | ||
JP63237396A JP3028963B2 (ja) | 1988-09-21 | 1988-09-21 | ビデオメモリ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900005630A true KR900005630A (ko) | 1990-04-14 |
KR920010558B1 KR920010558B1 (ko) | 1992-12-05 |
Family
ID=17014774
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890013571A KR920010558B1 (ko) | 1988-09-21 | 1989-09-21 | 비디오 메모리장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5065369A (ko) |
EP (1) | EP0360243B1 (ko) |
JP (1) | JP3028963B2 (ko) |
KR (1) | KR920010558B1 (ko) |
DE (1) | DE68919781T2 (ko) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5257237A (en) * | 1989-05-16 | 1993-10-26 | International Business Machines Corporation | SAM data selection on dual-ported DRAM devices |
IE63461B1 (en) * | 1989-09-11 | 1995-04-19 | Jeremy Owen Jones | Improvements in and relating to stable memory circuits |
JPH0821233B2 (ja) * | 1990-03-13 | 1996-03-04 | 株式会社東芝 | 画像メモリおよび画像メモリからデータを読み出す方法 |
FR2667688B1 (fr) * | 1990-10-05 | 1994-04-29 | Commissariat Energie Atomique | Circuit d'acquisition ultrarapide. |
JP2928654B2 (ja) * | 1991-04-10 | 1999-08-03 | 株式会社東芝 | マルチポートdram |
JP3158286B2 (ja) * | 1991-04-30 | 2001-04-23 | ソニー株式会社 | マルチポートメモリ |
EP0513451B1 (en) * | 1991-05-16 | 1997-07-23 | International Business Machines Corporation | Memory device |
US5268682A (en) * | 1991-10-07 | 1993-12-07 | Industrial Technology Research Institute | Resolution independent raster display system |
JPH05101646A (ja) * | 1991-10-07 | 1993-04-23 | Mitsubishi Electric Corp | デユアルポートメモリ |
US5315388A (en) * | 1991-11-19 | 1994-05-24 | General Instrument Corporation | Multiple serial access memory for use in feedback systems such as motion compensated television |
US5381376A (en) * | 1991-11-22 | 1995-01-10 | Samsung Electronics Co., Ltd. | Video RAM having block selection function during serial write transfer operation |
JPH0775015B2 (ja) * | 1991-12-19 | 1995-08-09 | インターナショナル・ビジネス・マシーンズ・コーポレイション | データ通信及び処理システム並びにデータ通信処理方法 |
US5321425A (en) * | 1992-02-19 | 1994-06-14 | Industrial Technology Research Institute | Resolution independent screen refresh strategy |
US5621866A (en) * | 1992-07-24 | 1997-04-15 | Fujitsu Limited | Image processing apparatus having improved frame buffer with Z buffer and SAM port |
US5528602A (en) * | 1992-12-30 | 1996-06-18 | International Business Machines Corporation | Method for determining computer subsystem property |
US5450355A (en) * | 1993-02-05 | 1995-09-12 | Micron Semiconductor, Inc. | Multi-port memory device |
US5490112A (en) * | 1993-02-05 | 1996-02-06 | Micron Technology, Inc. | Multi-port memory device with multiple sets of columns |
US5394172A (en) * | 1993-03-11 | 1995-02-28 | Micron Semiconductor, Inc. | VRAM having isolated array sections for providing write functions that will not affect other array sections |
JPH0736778A (ja) * | 1993-07-21 | 1995-02-07 | Toshiba Corp | 画像メモリ |
US5577203A (en) * | 1993-07-29 | 1996-11-19 | Cirrus Logic, Inc. | Video processing methods |
JPH07160572A (ja) * | 1993-12-10 | 1995-06-23 | Toshiba Corp | 画像メモリシステム |
IT1277474B1 (it) * | 1995-08-10 | 1997-11-10 | Sirti Spa | Connettore multifibra con ferula cilindrica |
JPWO2008029452A1 (ja) * | 2006-09-05 | 2010-01-21 | 日立プラズマディスプレイ株式会社 | 隔壁形成方法とその形成装置 |
JP4931139B2 (ja) * | 2007-07-04 | 2012-05-16 | 積水ハウス株式会社 | かぶり厚検査具 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60115088A (ja) * | 1983-11-28 | 1985-06-21 | Nec Corp | 半導体メモリ |
US4689741A (en) * | 1983-12-30 | 1987-08-25 | Texas Instruments Incorporated | Video system having a dual-port memory with inhibited random access during transfer cycles |
CA1293565C (en) * | 1986-04-28 | 1991-12-24 | Norio Ebihara | Semiconductor memory |
JPS62256300A (ja) * | 1986-04-28 | 1987-11-07 | Sony Corp | 映像記憶装置 |
JPS634493A (ja) * | 1986-06-24 | 1988-01-09 | Mitsubishi Electric Corp | デユアルポ−トメモリ |
JPS63112897A (ja) * | 1986-10-28 | 1988-05-17 | Mitsubishi Electric Corp | 半導体記憶装置 |
US4789960A (en) * | 1987-01-30 | 1988-12-06 | Rca Licensing Corporation | Dual port video memory system having semi-synchronous data input and data output |
JPH0760595B2 (ja) * | 1988-01-12 | 1995-06-28 | 日本電気株式会社 | 半導体メモリ |
US4891794A (en) * | 1988-06-20 | 1990-01-02 | Micron Technology, Inc. | Three port random access memory |
US4984214A (en) * | 1989-12-05 | 1991-01-08 | International Business Machines Corporation | Multiplexed serial register architecture for VRAM |
-
1988
- 1988-09-21 JP JP63237396A patent/JP3028963B2/ja not_active Expired - Fee Related
-
1989
- 1989-09-14 US US07/407,310 patent/US5065369A/en not_active Expired - Lifetime
- 1989-09-20 EP EP89117383A patent/EP0360243B1/en not_active Expired - Lifetime
- 1989-09-20 DE DE68919781T patent/DE68919781T2/de not_active Expired - Fee Related
- 1989-09-21 KR KR1019890013571A patent/KR920010558B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR920010558B1 (ko) | 1992-12-05 |
US5065369A (en) | 1991-11-12 |
EP0360243A3 (en) | 1992-04-08 |
EP0360243A2 (en) | 1990-03-28 |
JPH0284689A (ja) | 1990-03-26 |
DE68919781D1 (de) | 1995-01-19 |
EP0360243B1 (en) | 1994-12-07 |
DE68919781T2 (de) | 1995-05-18 |
JP3028963B2 (ja) | 2000-04-04 |
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A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
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FPAY | Annual fee payment |
Payment date: 20031128 Year of fee payment: 12 |
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LAPS | Lapse due to unpaid annual fee |