KR900004632B1 - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
KR900004632B1
KR900004632B1 KR8408476A KR840008476A KR900004632B1 KR 900004632 B1 KR900004632 B1 KR 900004632B1 KR 8408476 A KR8408476 A KR 8408476A KR 840008476 A KR840008476 A KR 840008476A KR 900004632 B1 KR900004632 B1 KR 900004632B1
Authority
KR
South Korea
Prior art keywords
collector
word lines
load
transistors
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR8408476A
Other languages
English (en)
Korean (ko)
Inventor
Yasuhisa Sugo
Toru Dakesima
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of KR900004632B1 publication Critical patent/KR900004632B1/ko
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
KR8408476A 1983-12-29 1984-12-28 Semiconductor memory device Expired KR900004632B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58247704A JPS60143496A (ja) 1983-12-29 1983-12-29 半導体記憶装置

Publications (1)

Publication Number Publication Date
KR900004632B1 true KR900004632B1 (en) 1990-06-30

Family

ID=17167412

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8408476A Expired KR900004632B1 (en) 1983-12-29 1984-12-28 Semiconductor memory device

Country Status (4)

Country Link
US (1) US4538244A (enExample)
EP (1) EP0149401A3 (enExample)
JP (1) JPS60143496A (enExample)
KR (1) KR900004632B1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4706107A (en) * 1981-06-04 1987-11-10 Nippon Electric Co., Ltd. IC memory cells with reduced alpha particle influence
US4551901A (en) * 1984-02-24 1985-11-12 Amp Incorporated Component insertion apparatus
JPS61127159A (ja) * 1984-11-26 1986-06-14 Nippon Texas Instr Kk スタテイツク形記憶素子
US4809052A (en) * 1985-05-10 1989-02-28 Hitachi, Ltd. Semiconductor memory device
GB2176339A (en) * 1985-06-10 1986-12-17 Philips Electronic Associated Semiconductor device with schottky junctions
JPH0740590B2 (ja) * 1985-09-06 1995-05-01 株式会社日立製作所 半導体装置
US5087956A (en) * 1985-10-25 1992-02-11 Hitachi, Ltd. Semiconductor memory device
JPS62130553A (ja) * 1985-12-02 1987-06-12 Mitsubishi Electric Corp 半導体集積回路装置
US4811067A (en) * 1986-05-02 1989-03-07 International Business Machines Corporation High density vertically structured memory
US4745580A (en) * 1986-06-09 1988-05-17 Laymoun Samir M Variable clamped memory cell
US4833644A (en) * 1986-08-26 1989-05-23 General Electric Company Memory cell circuit having radiation hardness
JPS6379373A (ja) * 1986-09-24 1988-04-09 Hitachi Ltd 半導体装置およびその製造方法
JPH0714037B2 (ja) * 1986-10-20 1995-02-15 三菱電機株式会社 半導体記憶装置
US4754430A (en) * 1986-12-18 1988-06-28 Honeywell Inc. Memory cell with dual collector, active load transistors
US4903087A (en) * 1987-01-13 1990-02-20 National Semiconductor Corporation Schottky barrier diode for alpha particle resistant static random access memories
US4922455A (en) * 1987-09-08 1990-05-01 International Business Machines Corporation Memory cell with active device for saturation capacitance discharge prior to writing
JP3099349B2 (ja) * 1989-06-29 2000-10-16 日本電気株式会社 バイポーラ型半導体メモリの製造方法
KR940001425B1 (ko) * 1990-11-06 1994-02-23 재단법인 한국전자통신연구소 수직구조를 갖는 바이폴라형 다이내믹 램을 제조하는 방법 및 그 다이내믹 램의 구조
DE102009018971A1 (de) * 2009-04-25 2010-11-04 Secos Halbleitertechnologie Gmbh Konstruktion einer Schottkydiode mit verbessertem Hochstromverhalten und Verfahren zu deren Herstellung

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4110775A (en) * 1976-08-23 1978-08-29 Festa Thomas A Schottky diode with voltage limiting guard band
JPS6058593B2 (ja) * 1976-10-01 1985-12-20 株式会社日立製作所 半導体メモリ
JPS6057707B2 (ja) * 1978-01-25 1985-12-16 株式会社日立製作所 記憶回路
JPS57167675A (en) * 1981-04-08 1982-10-15 Nec Corp Semiconductor device
JPS5843485A (ja) * 1981-09-10 1983-03-14 梶谷　正治 フリ−・ミニアチュア

Also Published As

Publication number Publication date
EP0149401A2 (en) 1985-07-24
US4538244A (en) 1985-08-27
JPS60143496A (ja) 1985-07-29
JPH041958B2 (enExample) 1992-01-14
EP0149401A3 (en) 1988-03-16

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