KR900000418A - 페놀수지성형 조성물, 이의 제조방법 및 이의 조성물로 밀봉된 반도체 장치 - Google Patents

페놀수지성형 조성물, 이의 제조방법 및 이의 조성물로 밀봉된 반도체 장치 Download PDF

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KR900000418A
KR900000418A KR1019890008022A KR890008022A KR900000418A KR 900000418 A KR900000418 A KR 900000418A KR 1019890008022 A KR1019890008022 A KR 1019890008022A KR 890008022 A KR890008022 A KR 890008022A KR 900000418 A KR900000418 A KR 900000418A
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composition
resin
less
filler
phenol resin
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KR1019890008022A
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KR0136373B1 (ko
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마사쯔구 오가타
야스히데 스가와라
마사노리 세가와
히데토시 아베
오사무 호리에
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미다 가쓰시게
가부시기 가이샤 히다찌 세이사꾸쇼
요꼬야마 료오지
히다찌 가세이 고교 가부시기 가이샤
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Abstract

내용 없음

Description

페놀수지성형 조성물, 이의 제조방법 및 이의 조성물로 밀봉된 반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 각종 성형재료(성형품의 형태)가 금선과 알루미늄 전극접합부의 고온에서의 접속강도 및 수명에 미치는 영향을 시험한 결과를 나타내는 그래프이고, 제2도는 제1도의 시험에 사용된 시험장치와 시험편의 단면 개략도이고, 제3도는 본 발명 조성물로 사용한 레조르형 페놀수지의 일예의 분자량 분포를 나타내는 겔침투 크로마토그래피이다.

Claims (25)

  1. 레조르형 페놀수지와 경화속도 조절제가 중량비로 50:50 내지 95:5로 구성되는 수지를 포함하는 페놀수지 성형 조성물.
  2. 제1항에 있어서, 경화속도 조절제가 에폭시 수지인 조성물.
  3. 제1항에 있어서, 레조르형 페놀수지대 경화속도 조절제의 중량비가 75:25 내지 95:5인 조성물.
  4. 제1항에 있어서,레조르형 페놀수지가 고순도인 조성물.
  5. 제4항에 있어서, 실질적으로 난연제를 포함하지 않은 조성물.
  6. 제4항에 있어서, 실질적으로 할로겐을 포함하지 않은 조성물.
  7. 제1항에 있어서, 충전제가 조성물 전체 용적에 대해 55 내지 80용적% 함유된 조성물.
  8. 제7항에 있어서, 충전제가 무기 입자물인 조성물.
  9. 제1항에 있어서, 수지성분이, 10배량의 120℃의 열수로 100시간이상 동안 가열시켜 추출시킬 경우, 추출물의 전기 전도도가 100㎲/㎝이하, pH가 4 내지 7 및 할로겐 이온 함량이 10ppm이하인 조성물.
  10. 제9항에 있어서, 무기 이온교환체가 수지성분 100중량부에 대해 5중량부이하 함유된 조성물.
  11. 제9항에 있어서, 충전제가 조성물의 전체 용적에 대해 55 내지 80용적% 함유된 조성물.
  12. 제10항에 있어서, 충전제가 조성물의 전체 용적에 대해 55 내지 80용적% 함유된 조성물.
  13. 제9항에 있어서, 충전제가 무기 입자물질인 조성물.
  14. 제10항에 있어서, 충전제가 무기 입자물질인 조성물.
  15. 제7항에 있어서, 무기 입자물질인 각기 평균입경 1-30㎛인 용융실리카, 결정실리카 및 알루미나로 구성된 그룹으로부터 선택된 적어도 일종인 조성물.
  16. 제9항에 있어서, 무기입자물질이 각기 평균입경 1 내지 30㎛인 용융실리카, 결정실리카 및 알루미나로 구성된 그룹으로부터 선택된 적어도 일종인 조성물.
  17. 제10항에 있어서, 무기 입자물질이 각기 평균입경 1 내지 30μ인 용융실리카, 결정실리카 및 알루미나로 구성된 그룹으로부터 선택된 적어도 일종인 조성물.
  18. 레조르형 페놀수지가 10배량의 120℃의 열수로 100시간이상 동안 가열시켜 추출시킨 경우, 추출물의 전기전도도가 100㎲/㎝이하, pH가 4 내지 7이고 할로겐 이온함량이 10ppm이하일 때까지 정제 처리시킨 페놀수지 조성물용으로 적합한 레조르형 페놀수지의 제조방법.
  19. 제18항에 있어서, 정제가 산으로 중화시키고 이어서 수세를 행하는 제조방법.
  20. (A) 정제된 수지를 10배량의 120℃의 열수로 100시간이상 동안 가열시켜 추출할 경우, 추출물의 전기 전도도가 10㎲/㎝이하, pH가 4 내지 7 및 할로겐 이온함량이 10ppm이하일 때까지 산으로 중화하고 이어서 수세하는 것을 포함하여 레조르형 페놀수지를 정제처리하고, (B) 상기 레조르형 페놀수지와 이와 함께 혼입된 경화속도 조절제가 중량%로 75:25 내지 95:5로 구성된 수지성분을 포함하는 조성물을 제조하고, (C) 충전제를 조성물의 전체 용적에 대해 55 내지 80용적%로 상기 조성물내로 혼입하고, (D) 상기 혼합물을 혼련하고, (E) 혼련된 혼합물을 분쇄하는 것을 포함하는 페놀수지 조성물의 제조방법.
  21. 제1항에 따른 페놀수지 성형 조성물로 밀봉된 수지 성형형 전자장치.
  22. 제1항에 따른 페놀수지 성형 조성물로 트랜스퍼 성형된 수지 성형형 반도체 장치.
  23. 제1항에 따른 페놀수지 성형형 조성물로 밀봉된 수지 성형형 반도체 장치.
  24. 제1항에 따른 페놀수지 조성물을 경화시켜 수득한 경화물.
  25. 제24항에 있어서, 10배량의 120℃의 열수로 100시간이상 동안 가열시켜 추출할 경우, 추출물의 전기전도도가 100㎲/㎝이하, pH가 4 내지 7이고 할로겐 이온함량이 10ppm이하인 경화물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890008022A 1988-06-10 1989-06-10 성형용 페놀수지 조성물, 이의 제조방법 및 이 조성물로 밀봉된 반도체 장치 KR0136373B1 (ko)

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JP63141750A JPH07113078B2 (ja) 1988-06-10 1988-06-10 成形用フエノール樹脂組成物及びその製法並びに該組成物で封止した半導体装置
JP63-141750 1988-06-10

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JPH03259914A (ja) * 1990-03-09 1991-11-20 Hitachi Ltd 半導体封止用樹脂組成物および該組成物を用いた半導体装置
JP2918328B2 (ja) * 1990-11-26 1999-07-12 株式会社デンソー 樹脂の選定方法及びこの選定方法により選定された樹脂を有する樹脂封止型半導体装置
JP2740990B2 (ja) * 1991-11-26 1998-04-15 株式会社日立製作所 低熱膨張性加圧成形用樹脂組成物

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US4367318A (en) * 1977-09-08 1983-01-04 Asahi Yakizai Kogyo Co. Epoxy resin composition
JPS59200444A (ja) * 1983-04-27 1984-11-13 Hitachi Chem Co Ltd エポキシ樹脂封止型半導体装置
JPS60260621A (ja) * 1984-06-08 1985-12-23 Dainippon Ink & Chem Inc 成形材料用樹脂組成物
JPS617325A (ja) * 1984-06-20 1986-01-14 Sumitomo Bakelite Co Ltd 高純度エポキシ樹脂組成物
FR2598427B1 (fr) * 1986-05-09 1988-06-03 Holden Europ Sa Composition a base d'une resine phenolique et d'une resine epoxydique pour revetements, notamment metallises

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GB2236108A (en) 1991-03-27
GB8920312D0 (en) 1989-10-25
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JPH07113078B2 (ja) 1995-12-06
MY104913A (en) 1994-06-30
JPH021754A (ja) 1990-01-08

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