KR900000178B1 - 마스터 슬라이스형 반도체 회로장치 - Google Patents

마스터 슬라이스형 반도체 회로장치 Download PDF

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Publication number
KR900000178B1
KR900000178B1 KR1019850004739A KR850004739A KR900000178B1 KR 900000178 B1 KR900000178 B1 KR 900000178B1 KR 1019850004739 A KR1019850004739 A KR 1019850004739A KR 850004739 A KR850004739 A KR 850004739A KR 900000178 B1 KR900000178 B1 KR 900000178B1
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KR
South Korea
Prior art keywords
memory
conductive layer
gate
block
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019850004739A
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English (en)
Korean (ko)
Other versions
KR860001485A (ko
Inventor
도모아끼 다나베
시게루 후지이
요시히사 다까야마
Original Assignee
후지쓰 가부시끼가이샤
야마모도 다꾸마(山本卓黃)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지쓰 가부시끼가이샤, 야마모도 다꾸마(山本卓黃) filed Critical 후지쓰 가부시끼가이샤
Publication of KR860001485A publication Critical patent/KR860001485A/ko
Application granted granted Critical
Publication of KR900000178B1 publication Critical patent/KR900000178B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H10D84/909—Microarchitecture
    • H10D84/935—Degree of specialisation for implementing specific functions
    • H10D84/937—Implementation of digital circuits
    • H10D84/938—Implementation of memory functions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1019850004739A 1984-07-02 1985-07-02 마스터 슬라이스형 반도체 회로장치 Expired KR900000178B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP59-135210 1984-07-02
JP135210 1984-07-02
JP59135210A JPS6122648A (ja) 1984-07-02 1984-07-02 マスタスライス型半導体集積回路装置

Publications (2)

Publication Number Publication Date
KR860001485A KR860001485A (ko) 1986-02-26
KR900000178B1 true KR900000178B1 (ko) 1990-01-23

Family

ID=15146419

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850004739A Expired KR900000178B1 (ko) 1984-07-02 1985-07-02 마스터 슬라이스형 반도체 회로장치

Country Status (2)

Country Link
JP (1) JPS6122648A (https=)
KR (1) KR900000178B1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0738414B2 (ja) * 1987-01-09 1995-04-26 株式会社東芝 半導体集積回路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58210638A (ja) * 1982-06-01 1983-12-07 Nec Corp 半導体集積回路
JPS5924492A (ja) * 1982-07-30 1984-02-08 Hitachi Ltd 半導体記憶装置の構成方法
JPS5955519A (ja) * 1982-09-24 1984-03-30 Tokyo Electric Co Ltd コンピユ−タ用基板

Also Published As

Publication number Publication date
JPS6122648A (ja) 1986-01-31
KR860001485A (ko) 1986-02-26
JPH0570943B2 (https=) 1993-10-06

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