KR890013812A - 초전도 재료와 그 제조방법 - Google Patents

초전도 재료와 그 제조방법 Download PDF

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KR890013812A
KR890013812A KR1019890002160A KR890002160A KR890013812A KR 890013812 A KR890013812 A KR 890013812A KR 1019890002160 A KR1019890002160 A KR 1019890002160A KR 890002160 A KR890002160 A KR 890002160A KR 890013812 A KR890013812 A KR 890013812A
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powder
mixture
raw material
superconducting
thin film
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KR1019890002160A
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KR0125876B1 (ko
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히데오 이또자끼
사부로 다나까
겐지로 히가끼
히사오 핫또리
나오지 후지모리
슈지 야즈
데쯔지 죠다이
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나까하라 쯔네오
스미또모 덴끼 고교 가부시끼 가이샤
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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
    • C04B35/4512—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides containing thallium oxide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/85—Superconducting active materials
    • H10N60/855—Ceramic superconductors
    • H10N60/857—Ceramic superconductors comprising copper oxide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C01G15/006—Compounds containing, besides gallium, indium, or thallium, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/087—Oxides of copper or solid solutions thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0408—Processes for depositing or forming copper oxide superconductor layers by sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/731—Sputter coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/80—Material per se process of making same
    • Y10S505/815—Process of making per se
    • Y10S505/816—Sputtering, including coating, forming, or etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Structural Engineering (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

내용 없음.

Description

초전도 재료와 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (13)

  1. 다음식 ;
    (여기서 x, y 및 z는 각기 0.5x3.0, 0.5y3.0 및0.9z4.0를 만족하는 수이다)로 표시되는 조성을 가지는 복합 산화물을 주로하여 포함함을 특징으로 하는 초전도 재료.
  2. 제1항에 있어서, 상기 x, y 및 z가 각기 1.5x2.5, 1.5y2.5 및 2.5z3.5를 만족하는 수임을 특징으로 하는 초전도 재료.
  3. Tl, Ca, Ba 및 Cu의 각원소 단체 분말 또는 이들 원소중 적어도 하나를 포함하는 화합물의 분말을 이들 모든 원소가 포함되도록 혼합한 혼합물 또는 이 혼합물을 소성한 후에 분쇄해서 얻어지는 소성체 분말을 원료 분말로하고, 이 원료 분말을 소결하는 공정을 적어도 1회 포함하는 것을 특징으로 하는 다음식 ;
    (여기서, x, y 및 z는 각기 0.5x3.0, 0.5y3.0 및 0.9z4.0을 만족하는 수이다)로 표시되는 조성을 가지는 복합 산화물을 주로 포함하는 것을 특징으로 하는 초전도 재료 제조방법.
  4. 제3항에 있어서, 상기 x, y 및 z가 각기 1.5x2.5, 1.5y2.5 및 2.5z2.5를 만족하는 수인 것을 특징으로 하는 초전도 재료 제조방법.
  5. 제3항 또는 제4항에 있어서, 상기 원료분말을 성형한 후에 상기 소결을 실행하는 것을 특징으로 하는 초전도 재료 제조방법.
  6. 제3항 내지 제5항중 어느 한 항에 있어서, 상기 화합물의 분말이 Ba, Ca, Tl 및 Cu의 각각의 산화물, 탄산염, 유산염, 초산염 및 수산염으로된 무리중에서 선택됨을 특징으로 하는 초전도 재료 제조방법.
  7. 제3항 내지 제5항중 어느 한 항에 있어서, Ba, Ca, Tl 및 Cu의 각각의 산화물, 탄산염, 유산염, 초산염 및 수산염으로된 무리중에서 선택되는 화합물의 분말을 혼합한 혼합물을 소성하고, 이어 분쇄해서 얻어지는 소성체 분말을 원료분말로 하는 것을 특징으로 하는 초전도 재료 제조방법.
  8. Tl, Ca, Ba 및 Cu 각 원소 단체분말 또는 이들 원소중 적어도 하나를 포함하는 화합물의 분말을 이들 모든 원소가 포함되도록 혼합한 혼합물 또는 이 혼합물을 소성한 후에 분쇄해서 얻어지는 소성체 분말을 원료분말로 하고 이 원료분말을 적어도 1회 소결하므로써 얻을수 있는 다음식 ;
    (여기서, x, y 및 z는 각기 0.5x3.0, 0.5y3.0 및 0.9z4.0을 만족하는 수이다)로 표시되는 조성을 가지는 복합산화물을 주로하여 포함하는 소결체를 타게트로서 사용하여 물리증착법으로 기판상에 박막을 성장시키는 것을 특징으로 하는 초전도 박막 제조방법.
  9. 제8항에 있어서, 상기 물리증착법이 스퍼터링법 또는 이온도금 방법인 것을 특징으로 하는 초전도 박막 제조방법.
  10. 제8항 내지 제9항중 어느 한 항에 있어서, 상기 x, y 및 z가 각기 1.5x2.5, 1.5y2.5 및 2.5z3.5를 만족하는 수인 것을 특징으로 하는 초전도 박막 제조방법.
  11. 제8항 내지 제10항중 어느 한 항에 있어서, 상기 원료분말을 성형한 후에 상기 소결을 실행하는 것을 특징으로 하는 초전도 박막 제조방법.
  12. 제8항 내지 제11항중 어느 한 항에 있어서, 상기 화합물 분말이 Ba, Ca, Tl 및 Cu의 각 원소의 산화물, 탄산염, 유산염, 초산염 및 수산염으로된 무리중에서 선택됨을 특징으로 하는 초전도 박막 제조방법.
  13. 제8항 내지 제12항중 어느 한 항에 있어서, Ba, Ca, Tl 및 Cu의 각 원소의 산화물, 탄산염, 유산염, 초산염 및 수산염으로된 무리중에서 선택되는 화합물 분말의 혼합물을 소성하고 이어 분쇄해서 얻어지는 소성체 분말을 원료분말로 하는 것을 특징으로 하는 초전도 박막 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890002160A 1988-02-25 1989-02-24 초전도 재료와 그 제조 방법 KR0125876B1 (ko)

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JP4269188 1988-02-25
JP63-42691 1988-02-25

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KR0125876B1 KR0125876B1 (ko) 1997-12-18

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EP (1) EP0330585B1 (ko)
KR (1) KR0125876B1 (ko)
CN (2) CN1018113B (ko)
AU (1) AU617766B2 (ko)
DE (1) DE68907949T2 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4870052A (en) * 1988-03-08 1989-09-26 International Business Machines Corporation Tl-Ca-Ba-Cu-O compositions electrically superconducting above 120 degree K and processes for their preparation
JPH02124759A (ja) * 1988-07-15 1990-05-14 Sumitomo Electric Ind Ltd 超電導材料の製造方法
JP2768523B2 (ja) * 1988-08-10 1998-06-25 イー・アイ・デユポン・ドウ・ヌムール・アンド・カンパニー 超伝導性金属酸化物組成物、その製造方法と使用
CN1317777C (zh) * 2003-08-29 2007-05-23 南开大学 铊系高温超导薄膜材料及其制备方法
CN100389471C (zh) * 2005-08-16 2008-05-21 孙万海 超导电材料及其制备方法
CN112824555B (zh) * 2019-11-21 2023-06-06 中国科学院上海微系统与信息技术研究所 一种钛氧化物超导薄膜的制备方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU598113B2 (en) * 1987-03-14 1990-06-14 Sumitomo Electric Industries, Ltd. Process for depositing a superconducting thin film
AU589068B2 (en) * 1987-08-10 1989-09-28 Furukawa Electric Co. Ltd., The Method of manufacturing oxide superconductor, and method of manufacturing composite oxide powder which is the precursor of the oxide superconductor
EP0311337B1 (en) * 1987-10-02 1993-08-04 Fujikura Ltd. Method of producing a superconductive oxide conductor and a superconductive oxide conductor produced by the method
EP0324661B1 (en) * 1988-01-15 1995-03-15 University Of Arkansas Novel superconductors and processes for their preparation
US4994432A (en) * 1988-01-15 1991-02-19 University Of Arkansas High temperature superconductor system and processes for making same
US4962083A (en) * 1988-02-12 1990-10-09 University Of Arkansas High temperature T1-Ba-Ca-Cu-O and T1-Sr-Cu-O superconductor
DE68920240T2 (de) * 1988-02-26 1995-05-24 Mitsubishi Materials Corp VERFAHREN ZUR HERSTELLUNG KERAMISCHER SUPRALEITER AUF BASIS VON Bi-Ca-Sr-Cu-O, Tl-Ca-Sr-Cu-O UND Tl-Ba-Ca-Cu-O.

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AU3084889A (en) 1989-08-31
CN1036287A (zh) 1989-10-11
EP0330585A2 (en) 1989-08-30
AU617766B2 (en) 1991-12-05
DE68907949T2 (de) 1994-02-24
CN1018113B (zh) 1992-09-02
CN1067326A (zh) 1992-12-23
EP0330585B1 (en) 1993-08-04
EP0330585A3 (en) 1990-11-07
KR0125876B1 (ko) 1997-12-18
DE68907949D1 (de) 1993-09-09

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