KR890005916A - 박막 형성 장치 - Google Patents

박막 형성 장치 Download PDF

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Publication number
KR890005916A
KR890005916A KR1019880012594A KR880012594A KR890005916A KR 890005916 A KR890005916 A KR 890005916A KR 1019880012594 A KR1019880012594 A KR 1019880012594A KR 880012594 A KR880012594 A KR 880012594A KR 890005916 A KR890005916 A KR 890005916A
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KR
South Korea
Prior art keywords
thin film
forming apparatus
film forming
electrode
dielectric
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KR1019880012594A
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English (en)
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KR920005624B1 (en
Inventor
다카시 아카호리
사토시 나카야마
Original Assignee
신구 야수오
스미도모 긴소꾸 고오교오 가부시기가이샤
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Application filed by 신구 야수오, 스미도모 긴소꾸 고오교오 가부시기가이샤 filed Critical 신구 야수오
Publication of KR890005916A publication Critical patent/KR890005916A/ko
Application granted granted Critical
Publication of KR920005624B1 publication Critical patent/KR920005624B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/488—Protection of windows for introduction of radiation into the coating chamber

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

내용 없음

Description

박막 형성 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명 장치를 표시한 종 단면도.
도면 제4도는 본 발명장치의 별도실시예를 표시한 종 단면도.
도면 제5도는 본 발명장치의 별도실시예의 주요부를 표시한 종단면도.

Claims (13)

  1. 유리창을 가지고 있는 챔버안에 시료를 배치하고, 전자파도 입선상에 설치된 유전체를 통하여 전자파를 상기한 챔버안에 도입하고, 이 전자파에 의하여 상기한 챔버안의 재료 가스를 활성화하며, 상기한 시료에 박막을 형성하는 장치에 있어서, 상기한 유전체의 근처에 설치된 전극과, 이 전극에 접속된 고주파 발생원을 구비하는 것을 특징으로 하는 박막형성장치.
  2. 제 1 항에 있어서, 상기한 전극은 상기한 유전체의 시료와 반대쪽면에 설치되어 있는 것을 특징으로 하는 박막형성장치.
  3. 제 1 항에 있어서, 상기한 전극은 상기한 유전체의 시료와 반대쪽면위에 근접해서 설치되어 있는 것을 특징으로 하는 박막형성장치.
  4. 제 1 항에 있어서, 상기한 전극은 상기한 유전체속으로 매설되어 있는 것을 특징으로 하는 박막형성장치.
  5. 제 1 항에 있어서, 상기한 전극은 상기한 유전체에 고정되어 있는 것을 특징으로 하는 박막형성장치.
  6. 제 1 항에 있어서, 상기한 전극은 유전체에 대하여 자유롭게 붙였다 땔수 있도록 하고 있는 것을 특징으로 하는 박막형성장치.
  7. 제 1 항에 있어서, 상기한 시료를 얹어두는 시료대를 구비한 것을 특징으로 하는 박막 형성장치.
  8. 제 1 항에 있어서, 상기한 재료를 챔버안에 도입하기 위한 가스관이 있는 것을 특징으로 하는 박막형성장치.
  9. 제 1 항에 있어서, 상기한 전자파가 광선인것을 특징으로 하는 박막형성장치.
  10. 제 1 항에 있어서, 상기한 전극에는 적어도 광선을 통과시키기 위한 구멍이 설치되어 있는 것을 특징으로 하는 박막형성장치.
  11. 제 9 항에 있어서, 상기한 전극은 광선을 통과시키기 위해서 그물(mech)형상을 이루고 있는 것을 특징으로 하는 박막형성장치.
  12. 제 1 항에 있어서, 상기한 전자파는 마이크로파인 것을 특징으로 하는 박막형성장치.
  13. 제 12 항에 있어서, 상기한 전극에는 적어도 마이크로파를 통과시키기 위한 구멍이 설치되어 있는 것을 특징으로 하는 박막형성장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR8812594A 1987-09-30 1988-09-29 Thin film forming apparatus KR920005624B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP?62-248911 1987-09-30
JP24891187 1987-09-30

Publications (2)

Publication Number Publication Date
KR890005916A true KR890005916A (ko) 1989-05-17
KR920005624B1 KR920005624B1 (en) 1992-07-10

Family

ID=17185256

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8812594A KR920005624B1 (en) 1987-09-30 1988-09-29 Thin film forming apparatus

Country Status (4)

Country Link
US (1) US4960071A (ko)
EP (1) EP0310347B1 (ko)
KR (1) KR920005624B1 (ko)
DE (1) DE3876205T2 (ko)

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DE3919538A1 (de) * 1989-06-15 1990-12-20 Asea Brown Boveri Beschichtungsvorrichtung
US5330606A (en) * 1990-12-14 1994-07-19 Matsushita Electric Industrial Co., Ltd. Plasma source for etching
US5087297A (en) * 1991-01-17 1992-02-11 Johnson Matthey Inc. Aluminum target for magnetron sputtering and method of making same
US5101764A (en) * 1991-02-20 1992-04-07 Texas Instruments Incorporated Method and apparatus for integrating optical sensor into processor
DE4217900A1 (de) * 1992-05-29 1993-12-02 Leybold Ag Anordnung einer mikrowellendurchlässigen Scheibe in einem Hohlleiter und Verfahren zur Einbringung dieser Scheibe
US5292370A (en) * 1992-08-14 1994-03-08 Martin Marietta Energy Systems, Inc. Coupled microwave ECR and radio-frequency plasma source for plasma processing
JP3227522B2 (ja) * 1992-10-20 2001-11-12 株式会社日立製作所 マイクロ波プラズマ処理方法及び装置
JP3252507B2 (ja) * 1993-01-29 2002-02-04 ソニー株式会社 プラズマ処理装置
US5571576A (en) * 1995-02-10 1996-11-05 Watkins-Johnson Method of forming a fluorinated silicon oxide layer using plasma chemical vapor deposition
US5814154A (en) * 1997-01-23 1998-09-29 Gasonics International Short-coupled-path extender for plasma source
US6026762A (en) 1997-04-23 2000-02-22 Applied Materials, Inc. Apparatus for improved remote microwave plasma source for use with substrate processing systems
US6274058B1 (en) 1997-07-11 2001-08-14 Applied Materials, Inc. Remote plasma cleaning method for processing chambers
JP3317209B2 (ja) * 1997-08-12 2002-08-26 東京エレクトロンエイ・ティー株式会社 プラズマ処理装置及びプラズマ処理方法
TW516113B (en) * 1999-04-14 2003-01-01 Hitachi Ltd Plasma processing device and plasma processing method
KR100976264B1 (ko) * 2008-03-31 2010-08-18 주식회사 잉크테크 금속 박막 형성 장치 및 이를 이용한 금속 박막 형성 방법
US8222125B2 (en) * 2010-08-12 2012-07-17 Ovshinsky Innovation, Llc Plasma deposition of amorphous semiconductors at microwave frequencies

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3893234A (en) * 1972-07-03 1975-07-08 Sierracin Corp Edge improvement for window with electrically conductive layer
FR2456787A1 (fr) * 1979-05-18 1980-12-12 Thomson Csf Dispositif hyperfrequence pour le depot de films minces sur des solides
JPS5958819A (ja) * 1982-09-29 1984-04-04 Hitachi Ltd 薄膜形成方法
US4576698A (en) * 1983-06-30 1986-03-18 International Business Machines Corporation Plasma etch cleaning in low pressure chemical vapor deposition systems
JPS60170037A (ja) * 1984-02-13 1985-09-03 Toshiba Corp トラツキング誤差信号生成方法
JPS60245217A (ja) * 1984-05-21 1985-12-05 Semiconductor Energy Lab Co Ltd 薄膜形成装置
JPS61196528A (ja) * 1985-02-25 1986-08-30 Semiconductor Energy Lab Co Ltd 薄膜形成方法
JPS62183512A (ja) * 1986-02-07 1987-08-11 Mitsubishi Electric Corp レ−ザ誘起薄膜堆積装置
JPH0676664B2 (ja) * 1986-12-09 1994-09-28 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による機能性堆積膜の形成装置

Also Published As

Publication number Publication date
KR920005624B1 (en) 1992-07-10
DE3876205T2 (de) 1993-05-27
EP0310347A1 (en) 1989-04-05
DE3876205D1 (de) 1993-01-07
US4960071A (en) 1990-10-02
EP0310347B1 (en) 1992-11-25

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