KR920005624B1 - Thin film forming apparatus - Google Patents

Thin film forming apparatus

Info

Publication number
KR920005624B1
KR920005624B1 KR8812594A KR880012594A KR920005624B1 KR 920005624 B1 KR920005624 B1 KR 920005624B1 KR 8812594 A KR8812594 A KR 8812594A KR 880012594 A KR880012594 A KR 880012594A KR 920005624 B1 KR920005624 B1 KR 920005624B1
Authority
KR
South Korea
Prior art keywords
thin film
forming apparatus
film forming
thin
forming
Prior art date
Application number
KR8812594A
Other languages
English (en)
Other versions
KR890005916A (ko
Inventor
Takashi Akahori
Satoshi Nakayama
Original Assignee
Sumitomo Metal Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Ind filed Critical Sumitomo Metal Ind
Publication of KR890005916A publication Critical patent/KR890005916A/ko
Application granted granted Critical
Publication of KR920005624B1 publication Critical patent/KR920005624B1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/488—Protection of windows for introduction of radiation into the coating chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
KR8812594A 1987-09-30 1988-09-29 Thin film forming apparatus KR920005624B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP?62-248911 1987-09-30
JP24891187 1987-09-30

Publications (2)

Publication Number Publication Date
KR890005916A KR890005916A (ko) 1989-05-17
KR920005624B1 true KR920005624B1 (en) 1992-07-10

Family

ID=17185256

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8812594A KR920005624B1 (en) 1987-09-30 1988-09-29 Thin film forming apparatus

Country Status (4)

Country Link
US (1) US4960071A (ko)
EP (1) EP0310347B1 (ko)
KR (1) KR920005624B1 (ko)
DE (1) DE3876205T2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009145442A2 (ko) * 2008-03-31 2009-12-03 주식회사 잉크테크 금속 박막 형성 장치 및 이를 이용한 금속 박막 형성 방법

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3919538A1 (de) * 1989-06-15 1990-12-20 Asea Brown Boveri Beschichtungsvorrichtung
US5330606A (en) * 1990-12-14 1994-07-19 Matsushita Electric Industrial Co., Ltd. Plasma source for etching
US5087297A (en) * 1991-01-17 1992-02-11 Johnson Matthey Inc. Aluminum target for magnetron sputtering and method of making same
US5101764A (en) * 1991-02-20 1992-04-07 Texas Instruments Incorporated Method and apparatus for integrating optical sensor into processor
DE4217900A1 (de) * 1992-05-29 1993-12-02 Leybold Ag Anordnung einer mikrowellendurchlässigen Scheibe in einem Hohlleiter und Verfahren zur Einbringung dieser Scheibe
US5292370A (en) * 1992-08-14 1994-03-08 Martin Marietta Energy Systems, Inc. Coupled microwave ECR and radio-frequency plasma source for plasma processing
JP3227522B2 (ja) * 1992-10-20 2001-11-12 株式会社日立製作所 マイクロ波プラズマ処理方法及び装置
JP3252507B2 (ja) * 1993-01-29 2002-02-04 ソニー株式会社 プラズマ処理装置
US5571576A (en) * 1995-02-10 1996-11-05 Watkins-Johnson Method of forming a fluorinated silicon oxide layer using plasma chemical vapor deposition
US5814154A (en) * 1997-01-23 1998-09-29 Gasonics International Short-coupled-path extender for plasma source
US6026762A (en) 1997-04-23 2000-02-22 Applied Materials, Inc. Apparatus for improved remote microwave plasma source for use with substrate processing systems
US6274058B1 (en) 1997-07-11 2001-08-14 Applied Materials, Inc. Remote plasma cleaning method for processing chambers
JP3317209B2 (ja) * 1997-08-12 2002-08-26 東京エレクトロンエイ・ティー株式会社 プラズマ処理装置及びプラズマ処理方法
TW516113B (en) * 1999-04-14 2003-01-01 Hitachi Ltd Plasma processing device and plasma processing method
US8222125B2 (en) * 2010-08-12 2012-07-17 Ovshinsky Innovation, Llc Plasma deposition of amorphous semiconductors at microwave frequencies

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3893234A (en) * 1972-07-03 1975-07-08 Sierracin Corp Edge improvement for window with electrically conductive layer
FR2456787A1 (fr) * 1979-05-18 1980-12-12 Thomson Csf Dispositif hyperfrequence pour le depot de films minces sur des solides
JPS5958819A (ja) * 1982-09-29 1984-04-04 Hitachi Ltd 薄膜形成方法
US4576698A (en) * 1983-06-30 1986-03-18 International Business Machines Corporation Plasma etch cleaning in low pressure chemical vapor deposition systems
JPS60170037A (ja) * 1984-02-13 1985-09-03 Toshiba Corp トラツキング誤差信号生成方法
JPS60245217A (ja) * 1984-05-21 1985-12-05 Semiconductor Energy Lab Co Ltd 薄膜形成装置
JPS61196528A (ja) * 1985-02-25 1986-08-30 Semiconductor Energy Lab Co Ltd 薄膜形成方法
JPS62183512A (ja) * 1986-02-07 1987-08-11 Mitsubishi Electric Corp レ−ザ誘起薄膜堆積装置
JPH0676664B2 (ja) * 1986-12-09 1994-09-28 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による機能性堆積膜の形成装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009145442A2 (ko) * 2008-03-31 2009-12-03 주식회사 잉크테크 금속 박막 형성 장치 및 이를 이용한 금속 박막 형성 방법
WO2009145442A3 (ko) * 2008-03-31 2010-01-21 주식회사 잉크테크 금속 박막 형성 장치 및 이를 이용한 금속 박막 형성 방법
CN101983259A (zh) * 2008-03-31 2011-03-02 印可得株式会社 金属薄膜形成装置和使用该装置的金属薄膜形成方法

Also Published As

Publication number Publication date
KR890005916A (ko) 1989-05-17
DE3876205T2 (de) 1993-05-27
EP0310347A1 (en) 1989-04-05
DE3876205D1 (de) 1993-01-07
US4960071A (en) 1990-10-02
EP0310347B1 (en) 1992-11-25

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Legal Events

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A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20080623

Year of fee payment: 17

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