KR870008373A - 프라즈마 처리 장치 - Google Patents

프라즈마 처리 장치 Download PDF

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Publication number
KR870008373A
KR870008373A KR870000805A KR870000805A KR870008373A KR 870008373 A KR870008373 A KR 870008373A KR 870000805 A KR870000805 A KR 870000805A KR 870000805 A KR870000805 A KR 870000805A KR 870008373 A KR870008373 A KR 870008373A
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South Korea
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cutlet
microwave
plasma processing
window member
raw
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KR870000805A
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KR940000384B1 (ko
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히로시 사이도우
신지 사사기
Original Assignee
미쓰다 가쓰시게
가부시기 가이샤 히다찌세이사꾸쇼
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Publication of KR870008373A publication Critical patent/KR870008373A/ko
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Publication of KR940000384B1 publication Critical patent/KR940000384B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

내용 없음

Description

프라즈마 처리 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명의 제 1 실시예의 측면 단면도.
제 2 도는 제 1도의 Ⅱ-Ⅱ부분의 가로 단면도.
제 3 도는 제 1 도의 Ⅲ-Ⅲ부분의 가로 단면도.

Claims (5)

  1. 다음 사항으로 구성되는, 고밀도이며 넓은 면적의 프라즈마를 발생시키기 위한 프라즈마 처리장치 :
    마이크로파 발생원으로부터 적어도 하나의 튜너와 적어도 하나의 도파관을 통해 마이크로파의 통로를 공기부와 감압부로 분할하는 창부재 쪽으로 마이크로파를 복사시키기 위한 마이크로파 발생부와,
    상기의 마이크로파 복사를 이용하여 원료까스를 활성화시키기 위한 것으로서, 공동 공진기가 되도록 제조되며, 상기의 마이크로파의 통로쪽으로 일부가 돌출된 상기의 창부재가 장치된 활성화실과,
    상기의 창부재의 표면을 따라 상기의 원료까스를 흐르게 하기 위한 적어도 하나의 입구와, 상기의 원료까스를 통과시키며, 상기의 마이크로파 복사를 반사시키기 위한 적어도 하나의 구멍.
  2. 청구범위 제 1 항의 프라즈마 처리장치에 있어서,
    상기의 구멍의 하나는, 상기의 통과 까스 흐름을 가로지르는 자력선을 발생시키기 위한 자기 수단으로 둘러 싸여 있다.
  3. 청구범위 제 1 항의 프라즈마 처리장치에 있어서,
    상기의 구멍들은 판부재에 만들어지는 다수의 관통구멍은, 상기의 창부재의 돌출부에 가까이 위치하는 하나의 구멍으로 이루어진다.
  4. 청구범위 제 1 항의 프라즈마 처리 장치에 있어서,
    상기의 구멍들은 판부재에 만들어지는 다수의 관통 구멍들로 이루어지며, 상기의 창부재의 돌출부에 가까이 배치되어 있다.
  5. 다음 사항들로 구성되는,
    고밀도의 프라즈마를 발생시키기 위한 프라즈마 처리장치 : 마이크로파 소스로부터 적어도 하나의 튜너와 적어도 하나의 도파관을 통해 마이크로파의 통로를 공기부와 감압부로 분할하는 창부재쪽으로 마이크로파를 복사시키기 위한 마이크로파 복사부분과,
    공동 공진기가 되도록 제조되고, 상기의 마이크로파 복사를 이용하여 원료까스를 활성화시키기 위한 것으로 일정한 간격을 두고 배치된 자기 수단에 의해 발생되는 자력선으로 상기의 까스를 깨끗하게 유지하기 위한 활성화실과, 상기의 활성화된 까스를 수송하기 위한 것으로서, 상기의 활성화실에 연결되며, 상기의 까스의 수송을 가로지르는 자력선을 발생시키기 위한 자기 수단으로 둘러싸인 수송관.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870000805A 1986-02-04 1987-02-02 프라즈마 처리장치 KR940000384B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61-21254 1986-02-04
JP61021254A JPH0740566B2 (ja) 1986-02-04 1986-02-04 プラズマ処理方法及びその装置
JP021254 1986-02-04

Publications (2)

Publication Number Publication Date
KR870008373A true KR870008373A (ko) 1987-09-26
KR940000384B1 KR940000384B1 (ko) 1994-01-19

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870000805A KR940000384B1 (ko) 1986-02-04 1987-02-02 프라즈마 처리장치

Country Status (3)

Country Link
US (1) US4831963A (ko)
JP (1) JPH0740566B2 (ko)
KR (1) KR940000384B1 (ko)

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Also Published As

Publication number Publication date
JPH0740566B2 (ja) 1995-05-01
JPS62179728A (ja) 1987-08-06
US4831963A (en) 1989-05-23
KR940000384B1 (ko) 1994-01-19

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