KR890004767B1 - 반도체 기억장치 - Google Patents

반도체 기억장치 Download PDF

Info

Publication number
KR890004767B1
KR890004767B1 KR1019840007746A KR840007746A KR890004767B1 KR 890004767 B1 KR890004767 B1 KR 890004767B1 KR 1019840007746 A KR1019840007746 A KR 1019840007746A KR 840007746 A KR840007746 A KR 840007746A KR 890004767 B1 KR890004767 B1 KR 890004767B1
Authority
KR
South Korea
Prior art keywords
capacitor
conductivity type
region
type
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019840007746A
Other languages
English (en)
Korean (ko)
Other versions
KR850005734A (ko
Inventor
유끼마사 우치다
Original Assignee
가부시끼 가이샤 도오시바
사바 쇼오이찌
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼 가이샤 도오시바, 사바 쇼오이찌 filed Critical 가부시끼 가이샤 도오시바
Publication of KR850005734A publication Critical patent/KR850005734A/ko
Application granted granted Critical
Publication of KR890004767B1 publication Critical patent/KR890004767B1/ko
Expired legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019840007746A 1984-01-20 1984-12-07 반도체 기억장치 Expired KR890004767B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59-7958 1984-01-20
JP59007958A JPS60152059A (ja) 1984-01-20 1984-01-20 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR850005734A KR850005734A (ko) 1985-08-28
KR890004767B1 true KR890004767B1 (ko) 1989-11-25

Family

ID=11679992

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840007746A Expired KR890004767B1 (ko) 1984-01-20 1984-12-07 반도체 기억장치

Country Status (2)

Country Link
JP (1) JPS60152059A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR890004767B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930007522B1 (ko) * 1985-03-08 1993-08-12 가부시끼 가이샤 히다찌세이사꾸쇼 종형 커패시터를 사용한 반도체메모리
JPH0650766B2 (ja) * 1985-09-27 1994-06-29 株式会社東芝 半導体メモリ装置
JPH0650767B2 (ja) * 1985-10-22 1994-06-29 株式会社東芝 半導体記憶装置の製造方法
JPH0682797B2 (ja) * 1985-12-16 1994-10-19 株式会社東芝 半導体装置の製造方法
DE3780840T2 (de) * 1986-03-03 1993-03-25 Fujitsu Ltd Einen rillenkondensator enthaltender dynamischer speicher mit wahlfreiem zugriff.
JPS6427252A (en) * 1987-04-13 1989-01-30 Nec Corp Semiconductor storage device
US4794434A (en) * 1987-07-06 1988-12-27 Motorola, Inc. Trench cell for a dram
JP2023042501A (ja) * 2021-09-14 2023-03-27 キオクシア株式会社 半導体装置、保護回路、及び半導体装置の製造方法

Also Published As

Publication number Publication date
JPS60152059A (ja) 1985-08-10
JPH0365664B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-10-14
KR850005734A (ko) 1985-08-28

Similar Documents

Publication Publication Date Title
KR890004766B1 (ko) 반도체 기억장치
KR900000181B1 (ko) 반도체 기억장치
US4845544A (en) Semiconductor integrated device having a field-effect transistor type memory cell array and peripheral circuitry structure
JP2723530B2 (ja) ダイナミック型ランダムアクセスメモリ装置の製造方法
US5428236A (en) Semiconductor memory device having trenched capicitor
US5156993A (en) Fabricating a memory cell with an improved capacitor
KR900000180B1 (ko) 반도체 기억장치의 제조방법
KR900000635B1 (ko) 반도체 기억장치
KR890004767B1 (ko) 반도체 기억장치
KR940002393B1 (ko) 반도체기억장치
EP0033130B1 (en) Semiconductor memory device
KR890004765B1 (ko) 반도체 기억장치
JPS61176148A (ja) 半導体記憶装置
KR910002039B1 (ko) 반도체기억장치의 제조방법
KR950012744B1 (ko) 반도체 기억장치의 제조방법
JPS61229353A (ja) 集積回路型ダイナミツクメモリ
JPH0369185B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6058663A (ja) 電荷一時蓄積記憶装置
KR890004764B1 (ko) 반도체 기억장치
CA1228425A (en) Dynamic ram cell with mos trench capacitor in cmos
JPS6058662A (ja) 電荷一時蓄積記憶装置
JPS6237960A (ja) 読み出し専用半導体記憶装置の製造方法
JPS63110770A (ja) 半導体記憶装置
JP2583123B2 (ja) メモリセルの形成方法
JPS63197371A (ja) ダイナミツクランダムアクセスメモリ

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

St.27 status event code: A-2-2-Q10-Q13-nap-PG1605

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

Fee payment year number: 1

St.27 status event code: A-2-2-U10-U11-oth-PR1002

PR1001 Payment of annual fee

Fee payment year number: 4

St.27 status event code: A-4-4-U10-U11-oth-PR1001

PR1001 Payment of annual fee

Fee payment year number: 5

St.27 status event code: A-4-4-U10-U11-oth-PR1001

PR1001 Payment of annual fee

Fee payment year number: 6

St.27 status event code: A-4-4-U10-U11-oth-PR1001

PR1001 Payment of annual fee

Fee payment year number: 7

St.27 status event code: A-4-4-U10-U11-oth-PR1001

PR1001 Payment of annual fee

Fee payment year number: 8

St.27 status event code: A-4-4-U10-U11-oth-PR1001

PR1001 Payment of annual fee

Fee payment year number: 9

St.27 status event code: A-4-4-U10-U11-oth-PR1001

PR1001 Payment of annual fee

Fee payment year number: 10

St.27 status event code: A-4-4-U10-U11-oth-PR1001

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

St.27 status event code: A-5-5-R10-R13-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

Fee payment year number: 11

St.27 status event code: A-4-4-U10-U11-oth-PR1001

PR1001 Payment of annual fee

Fee payment year number: 12

St.27 status event code: A-4-4-U10-U11-oth-PR1001

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

Fee payment year number: 13

St.27 status event code: A-4-4-U10-U11-oth-PR1001

PR1001 Payment of annual fee

Fee payment year number: 14

St.27 status event code: A-4-4-U10-U11-oth-PR1001

FPAY Annual fee payment

Payment date: 20031030

Year of fee payment: 15

PR1001 Payment of annual fee

Fee payment year number: 15

St.27 status event code: A-4-4-U10-U11-oth-PR1001

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

Not in force date: 20041126

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

St.27 status event code: A-4-4-U10-U13-oth-PC1903

PC1903 Unpaid annual fee

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20041126

St.27 status event code: N-4-6-H10-H13-oth-PC1903

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000