KR890003691B1 - 블럭 열 리던던씨 회로 - Google Patents

블럭 열 리던던씨 회로 Download PDF

Info

Publication number
KR890003691B1
KR890003691B1 KR1019860006932A KR860006932A KR890003691B1 KR 890003691 B1 KR890003691 B1 KR 890003691B1 KR 1019860006932 A KR1019860006932 A KR 1019860006932A KR 860006932 A KR860006932 A KR 860006932A KR 890003691 B1 KR890003691 B1 KR 890003691B1
Authority
KR
South Korea
Prior art keywords
normal
block
spare
column
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019860006932A
Other languages
English (en)
Korean (ko)
Other versions
KR880003329A (ko
Inventor
서숭모
Original Assignee
삼성전자 주식회사
강진구
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사, 강진구 filed Critical 삼성전자 주식회사
Priority to KR1019860006932A priority Critical patent/KR890003691B1/ko
Priority to JP62182412A priority patent/JPS6353794A/ja
Priority to DE19873724509 priority patent/DE3724509A1/de
Priority to FR878711801A priority patent/FR2603129B1/fr
Priority to US07/088,151 priority patent/US4829480A/en
Priority to GB8719936A priority patent/GB2195480B/en
Publication of KR880003329A publication Critical patent/KR880003329A/ko
Application granted granted Critical
Publication of KR890003691B1 publication Critical patent/KR890003691B1/ko
Priority to SG582/92A priority patent/SG58292G/en
Priority to HK183/93A priority patent/HK18393A/xx
Expired legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
  • Dram (AREA)
KR1019860006932A 1986-08-22 1986-08-22 블럭 열 리던던씨 회로 Expired KR890003691B1 (ko)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1019860006932A KR890003691B1 (ko) 1986-08-22 1986-08-22 블럭 열 리던던씨 회로
JP62182412A JPS6353794A (ja) 1986-08-22 1987-07-23 半導体メモリー装置
DE19873724509 DE3724509A1 (de) 1986-08-22 1987-07-24 Dynamischer ram
US07/088,151 US4829480A (en) 1986-08-22 1987-08-21 Column redundancy circuit for CMOS dynamic random access memory
FR878711801A FR2603129B1 (fr) 1986-08-22 1987-08-21 Circuit de redondance de colonne pour memoire a acces aleatoire dynamique en technologie cmos
GB8719936A GB2195480B (en) 1986-08-22 1987-08-24 Column redundancy circuit for dynamic random access memory
SG582/92A SG58292G (en) 1986-08-22 1992-06-03 Column redundancy circuit for dynamic random access memory
HK183/93A HK18393A (en) 1986-08-22 1993-03-04 Column redundancy circuit for dynamic random access memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019860006932A KR890003691B1 (ko) 1986-08-22 1986-08-22 블럭 열 리던던씨 회로

Publications (2)

Publication Number Publication Date
KR880003329A KR880003329A (ko) 1988-05-16
KR890003691B1 true KR890003691B1 (ko) 1989-09-30

Family

ID=19251841

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860006932A Expired KR890003691B1 (ko) 1986-08-22 1986-08-22 블럭 열 리던던씨 회로

Country Status (8)

Country Link
US (1) US4829480A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS6353794A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR890003691B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3724509A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2603129B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2195480B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
HK (1) HK18393A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SG (1) SG58292G (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5426607A (en) * 1988-04-27 1995-06-20 Sharp Kabushiki Kaisha Redundant circuit for memory having redundant block operatively connected to special one of normal blocks
KR910003594B1 (ko) * 1988-05-13 1991-06-07 삼성전자 주식회사 스페어컬럼(column)선택방법 및 회로
US5687109A (en) * 1988-05-31 1997-11-11 Micron Technology, Inc. Integrated circuit module having on-chip surge capacitors
US5327380B1 (en) * 1988-10-31 1999-09-07 Texas Instruments Inc Method and apparatus for inhibiting a predecoder when selecting a redundant row line
NL8900026A (nl) * 1989-01-06 1990-08-01 Philips Nv Matrixgeheugen, bevattende standaardblokken, standaardsubblokken, een redundant blok, en redundante subblokken, alsmede geintegreerde schakeling bevattende meerdere van zulke matrixgeheugens.
KR910005601B1 (ko) * 1989-05-24 1991-07-31 삼성전자주식회사 리던던트 블럭을 가지는 반도체 메모리장치
KR920009059B1 (ko) * 1989-12-29 1992-10-13 삼성전자 주식회사 반도체 메모리 장치의 병렬 테스트 방법
KR920010347B1 (ko) * 1989-12-30 1992-11-27 삼성전자주식회사 분할된 워드라인을 가지는 메모리장치의 리던던시 구조
KR930000821B1 (ko) * 1990-02-24 1993-02-05 현대전자산업 주식회사 메모리 소자의 저소비 전력 리던던시(Redundancy)회로
JP2575919B2 (ja) * 1990-03-22 1997-01-29 株式会社東芝 半導体記憶装置の冗長回路
US5293564A (en) * 1991-04-30 1994-03-08 Texas Instruments Incorporated Address match scheme for DRAM redundancy scheme
EP0514664A3 (en) * 1991-05-20 1993-05-26 International Business Machines Corporation Dynamic random access memory with a redundancy decoder
KR940006079B1 (ko) * 1991-06-14 1994-07-06 삼성전자 주식회사 반도체 메모리 장치
KR940008211B1 (ko) * 1991-08-21 1994-09-08 삼성전자 주식회사 반도체메모리장치의 리던던트 셀 어레이 배열방법
US6026505A (en) * 1991-10-16 2000-02-15 International Business Machines Corporation Method and apparatus for real time two dimensional redundancy allocation
US5295102A (en) * 1992-01-31 1994-03-15 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with improved redundant sense amplifier control
US5471426A (en) * 1992-01-31 1995-11-28 Sgs-Thomson Microelectronics, Inc. Redundancy decoder
US5278793A (en) * 1992-02-25 1994-01-11 Yeh Tsuei Chi Memory defect masking device
KR950000275B1 (ko) * 1992-05-06 1995-01-12 삼성전자 주식회사 반도체 메모리 장치의 컬럼 리던던시
US5301153A (en) * 1992-06-03 1994-04-05 Mips Computer Systems, Inc. Redundant element substitution apparatus
JP2870320B2 (ja) * 1992-09-29 1999-03-17 日本電気株式会社 半導体メモリ回路
US5392245A (en) * 1993-08-13 1995-02-21 Micron Technology, Inc. Redundancy elements using thin film transistors (TFTs)
JP3530574B2 (ja) * 1994-05-20 2004-05-24 株式会社ルネサステクノロジ 半導体記憶装置
KR0130030B1 (ko) * 1994-08-25 1998-10-01 김광호 반도체 메모리 장치의 컬럼 리던던시 회로 및 그 방법
KR970001564U (ko) * 1995-06-21 1997-01-21 자동차용 후부차체의 보강구조
KR0167678B1 (ko) * 1995-08-22 1999-02-01 김광호 컬럼 리던던시 회로를 가지는 반도체 메모리 장치
US5612918A (en) * 1995-12-29 1997-03-18 Sgs-Thomson Microelectronics, Inc. Redundancy architecture
US5790462A (en) * 1995-12-29 1998-08-04 Sgs-Thomson Microelectronics, Inc. Redundancy control
US5841709A (en) * 1995-12-29 1998-11-24 Stmicroelectronics, Inc. Memory having and method for testing redundant memory cells
KR0179550B1 (ko) * 1995-12-29 1999-04-15 김주용 반도체 메모리 장치의 리던던시 회로
US6037799A (en) * 1995-12-29 2000-03-14 Stmicroelectronics, Inc. Circuit and method for selecting a signal
US5771195A (en) * 1995-12-29 1998-06-23 Sgs-Thomson Microelectronics, Inc. Circuit and method for replacing a defective memory cell with a redundant memory cell
KR100224774B1 (ko) * 1996-06-29 1999-10-15 김영환 반도체 메모리 장치의 컬럼 리던던시 회로
KR100228533B1 (ko) * 1997-06-23 1999-11-01 윤종용 반도체 집적회로의 용단가능한 퓨즈 및 그 제조방법
US5999463A (en) * 1997-07-21 1999-12-07 Samsung Electronics Co., Ltd. Redundancy fuse box and semiconductor device including column redundancy fuse box shared by a plurality of memory blocks
KR100542696B1 (ko) * 2003-11-13 2006-01-11 주식회사 하이닉스반도체 반도체 장치의 리페어 퓨즈 박스
EP2351652B1 (en) 2008-10-10 2014-12-24 Kotobuki & Co., Ltd. Clip mounting structure for writing implement
US10134486B2 (en) * 2016-09-13 2018-11-20 Samsung Electronics Co., Ltd. Memory device including a redundancy column and a redundancy peripheral logic circuit

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS555698B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-06-14 1980-02-08
US4228528B2 (en) * 1979-02-09 1992-10-06 Memory with redundant rows and columns
JPS5677997A (en) * 1979-11-28 1981-06-26 Fujitsu Ltd Semiconductor memory device
US4281398A (en) * 1980-02-12 1981-07-28 Mostek Corporation Block redundancy for memory array
US4346459A (en) * 1980-06-30 1982-08-24 Inmos Corporation Redundancy scheme for an MOS memory
US4389715A (en) * 1980-10-06 1983-06-21 Inmos Corporation Redundancy scheme for a dynamic RAM
JPS59104791A (ja) * 1982-12-04 1984-06-16 Fujitsu Ltd 半導体記憶装置
JPS59119743A (ja) * 1982-12-25 1984-07-11 Nippon Telegr & Teleph Corp <Ntt> 集積回路の冗長構成方式
JPS59121699A (ja) * 1982-12-28 1984-07-13 Toshiba Corp 冗長性回路変更装置
US4556975A (en) * 1983-02-07 1985-12-03 Westinghouse Electric Corp. Programmable redundancy circuit
US4601019B1 (en) * 1983-08-31 1997-09-30 Texas Instruments Inc Memory with redundancy
JPS61217993A (ja) * 1985-03-22 1986-09-27 Mitsubishi Electric Corp 半導体メモリ
JPS632351A (ja) * 1986-06-20 1988-01-07 Sharp Corp 半導体装置

Also Published As

Publication number Publication date
US4829480A (en) 1989-05-09
GB2195480B (en) 1990-12-12
JPS6353794A (ja) 1988-03-08
FR2603129A1 (fr) 1988-02-26
FR2603129B1 (fr) 1990-08-17
JPH0535520B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-05-26
HK18393A (en) 1993-03-12
DE3724509A1 (de) 1988-02-25
SG58292G (en) 1992-07-24
GB2195480A (en) 1988-04-07
GB8719936D0 (en) 1987-09-30
KR880003329A (ko) 1988-05-16

Similar Documents

Publication Publication Date Title
KR890003691B1 (ko) 블럭 열 리던던씨 회로
US6281739B1 (en) Fuse circuit and redundant decoder
KR100386643B1 (ko) 메모리 디바이스
EP0034070B1 (en) Fault tolerant memory system
US6519192B2 (en) Semiconductor memory device having a large band width and allowing efficient execution of redundant repair
JP2632076B2 (ja) 半導体記憶装置
KR100192574B1 (ko) 디코디드 퓨즈를 사용한 반도체 메모리 장치의 컬럼 리던던시 회로
US4566081A (en) Semiconductor device with spare memory cells
US7995407B2 (en) Semiconductor memory device and control method thereof
US5612918A (en) Redundancy architecture
EP0503100B1 (en) Semiconductor memory
US5995419A (en) Repairable memory cell for a memory cell array
KR19990077600A (ko) 반도체메모리장치
US5790462A (en) Redundancy control
US4987560A (en) Semiconductor memory device
KR100287019B1 (ko) 트루/컴플리먼트 리던던시 스킴을 가지는 반도체 메모리 장치
JP3673637B2 (ja) 冗長回路を備えた半導体メモリ装置
US6456547B1 (en) Semiconductor memory device with function of repairing stand-by current failure
KR100300037B1 (ko) 반도체메모리의로우리던던트회로
US6643166B1 (en) Low power SRAM redundancy repair scheme
KR970008445B1 (ko) 반도체 기억 장치
US5831907A (en) Repairable memory cell for a memory cell array
CN100462932C (zh) 低功率静态随机存取存储器备份修复结构
KR0166496B1 (ko) 반도체 기억소자의 리던던시 장치
US6243301B1 (en) Semiconductor memory device and signal line switching circuit

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19860822

PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19860822

Comment text: Request for Examination of Application

PG1501 Laying open of application
N231 Notification of change of applicant
PN2301 Change of applicant

Patent event date: 19890313

Comment text: Notification of Change of Applicant

Patent event code: PN23011R01D

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 19890614

Patent event code: PE09021S01D

G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

Comment text: Decision on Publication of Application

Patent event code: PG16051S01I

Patent event date: 19890829

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 19891229

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 19900118

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 19900118

End annual number: 3

Start annual number: 1

PR1001 Payment of annual fee

Payment date: 19920618

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 19930125

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 19940715

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 19950825

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 19960830

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 19970828

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 19980828

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 19990814

Start annual number: 11

End annual number: 11

PR1001 Payment of annual fee

Payment date: 20000814

Start annual number: 12

End annual number: 12

PR1001 Payment of annual fee

Payment date: 20010807

Start annual number: 13

End annual number: 13

PR1001 Payment of annual fee

Payment date: 20020807

Start annual number: 14

End annual number: 14

PR1001 Payment of annual fee

Payment date: 20030808

Start annual number: 15

End annual number: 15

PR1001 Payment of annual fee

Payment date: 20040331

Start annual number: 16

End annual number: 16

FPAY Annual fee payment

Payment date: 20050802

Year of fee payment: 17

PR1001 Payment of annual fee

Payment date: 20050802

Start annual number: 17

End annual number: 17

EXPY Expiration of term
PC1801 Expiration of term

Termination date: 20070510

Termination category: Expiration of duration