KR890003018B1 - 실리콘 옥시니트리드 재료의 증착 방법 - Google Patents

실리콘 옥시니트리드 재료의 증착 방법 Download PDF

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Publication number
KR890003018B1
KR890003018B1 KR1019860700127A KR860700127A KR890003018B1 KR 890003018 B1 KR890003018 B1 KR 890003018B1 KR 1019860700127 A KR1019860700127 A KR 1019860700127A KR 860700127 A KR860700127 A KR 860700127A KR 890003018 B1 KR890003018 B1 KR 890003018B1
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KR
South Korea
Prior art keywords
silicon
oxygen
containing compound
photochemical
silicon oxynitride
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Expired
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KR1019860700127A
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English (en)
Korean (ko)
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KR860700269A (ko
Inventor
죤 더블유 피터즈
Original Assignee
휴우즈 에어크라프트 캄파니
에이.더블유.카람벨라스
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Publication of KR860700269A publication Critical patent/KR860700269A/ko
Application granted granted Critical
Publication of KR890003018B1 publication Critical patent/KR890003018B1/ko
Expired legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6338—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition the reactions being activated by other means than plasma or thermal, e.g. photo-CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
KR1019860700127A 1984-07-02 1985-04-22 실리콘 옥시니트리드 재료의 증착 방법 Expired KR890003018B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US627,366 1984-07-02
US06/627,366 US4543271A (en) 1984-07-02 1984-07-02 Silicon oxynitride material and photochemical process for forming same
US627366 1984-07-02
PCT/US1985/000728 WO1986000651A1 (en) 1984-07-02 1985-04-22 Improved silicon oxynitride material and process for forming same

Publications (2)

Publication Number Publication Date
KR860700269A KR860700269A (ko) 1986-08-01
KR890003018B1 true KR890003018B1 (ko) 1989-08-18

Family

ID=24514356

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860700127A Expired KR890003018B1 (ko) 1984-07-02 1985-04-22 실리콘 옥시니트리드 재료의 증착 방법

Country Status (8)

Country Link
US (1) US4543271A (enExample)
EP (1) EP0188438B1 (enExample)
JP (1) JPS61502616A (enExample)
KR (1) KR890003018B1 (enExample)
DE (1) DE3578438D1 (enExample)
HK (1) HK93390A (enExample)
IL (1) IL75278A0 (enExample)
WO (1) WO1986000651A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4702936A (en) * 1984-09-20 1987-10-27 Applied Materials Japan, Inc. Gas-phase growth process
US4654226A (en) * 1986-03-03 1987-03-31 The University Of Delaware Apparatus and method for photochemical vapor deposition
DE3902628A1 (de) * 1989-01-30 1990-08-02 Hauni Elektronik Gmbh Duennschichtmaterial fuer sensoren oder aktuatoren und verfahren zu dessen herstellung
FR2651782B1 (fr) * 1989-09-14 1993-03-19 Air Liquide Procede pour la realisation d'un depot d'un revetement protecteur inorganique et amorphe sur un substrat polymerique organique.
FR2695118B1 (fr) * 1992-09-02 1994-10-07 Air Liquide Procédé de formation d'une couche barrière sur une surface d'un objet en verre.
DE69333722T2 (de) * 1993-05-31 2005-12-08 Stmicroelectronics S.R.L., Agrate Brianza Verfahren zur Verbesserung der Haftung zwischen Dielektrikschichten, an ihrer Grenzfläche, in der Herstellung von Halbleiterbauelementen
US6107194A (en) * 1993-12-17 2000-08-22 Stmicroelectronics, Inc. Method of fabricating an integrated circuit
US5439846A (en) * 1993-12-17 1995-08-08 Sgs-Thomson Microelectronics, Inc. Self-aligned method for forming contact with zero offset to gate
US6284584B1 (en) * 1993-12-17 2001-09-04 Stmicroelectronics, Inc. Method of masking for periphery salicidation of active regions
US5728224A (en) * 1995-09-13 1998-03-17 Tetra Laval Holdings & Finance S.A. Apparatus and method for manufacturing a packaging material using gaseous phase atmospheric photo chemical vapor deposition to apply a barrier layer to a moving web substrate
US6841439B1 (en) * 1997-07-24 2005-01-11 Texas Instruments Incorporated High permittivity silicate gate dielectric
US7115461B2 (en) * 1997-07-24 2006-10-03 Texas Instruments Incorporated High permittivity silicate gate dielectric
US6316820B1 (en) 1997-07-25 2001-11-13 Hughes Electronics Corporation Passivation layer and process for semiconductor devices
US6046101A (en) * 1997-12-31 2000-04-04 Intel Corporation Passivation technology combining improved adhesion in passivation and a scribe street without passivation
US6352940B1 (en) * 1998-06-26 2002-03-05 Intel Corporation Semiconductor passivation deposition process for interfacial adhesion
US20010052323A1 (en) * 1999-02-17 2001-12-20 Ellie Yieh Method and apparatus for forming material layers from atomic gasses
US20050227239A1 (en) * 2004-04-08 2005-10-13 Joyce Timothy H Microarray based affinity purification and analysis device coupled with solid state nanopore electrodes
DE202007001431U1 (de) * 2007-01-31 2007-05-16 Infineon Technologies Austria Ag Halbleiteranordnung und Leistungshalbleiterbauelement

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5148750B2 (enExample) * 1971-08-26 1976-12-22
IT1088852B (it) * 1976-11-01 1985-06-10 Rca Corp Struttura passivante per un dispositivo simeconduttore
US4181751A (en) * 1978-05-24 1980-01-01 Hughes Aircraft Company Process for the preparation of low temperature silicon nitride films by photochemical vapor deposition
JPS5559729A (en) * 1978-10-27 1980-05-06 Fujitsu Ltd Forming method of semiconductor surface insulating film
US4289797A (en) * 1979-10-11 1981-09-15 Western Electric Co., Incorporated Method of depositing uniform films of Six Ny or Six Oy in a plasma reactor
US4371587A (en) * 1979-12-17 1983-02-01 Hughes Aircraft Company Low temperature process for depositing oxide layers by photochemical vapor deposition
JPS5693344A (en) * 1979-12-26 1981-07-28 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
WO1986000651A1 (en) 1986-01-30
KR860700269A (ko) 1986-08-01
DE3578438D1 (de) 1990-08-02
US4543271A (en) 1985-09-24
IL75278A0 (en) 1985-09-29
HK93390A (en) 1990-11-16
EP0188438B1 (en) 1990-06-27
EP0188438A1 (en) 1986-07-30
JPH048511B2 (enExample) 1992-02-17
JPS61502616A (ja) 1986-11-13

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