JPS61502616A - 改良されたシリコンオキシニトリド材料及びその製造方法 - Google Patents

改良されたシリコンオキシニトリド材料及びその製造方法

Info

Publication number
JPS61502616A
JPS61502616A JP60501924A JP50192485A JPS61502616A JP S61502616 A JPS61502616 A JP S61502616A JP 60501924 A JP60501924 A JP 60501924A JP 50192485 A JP50192485 A JP 50192485A JP S61502616 A JPS61502616 A JP S61502616A
Authority
JP
Japan
Prior art keywords
silicon
oxygen
containing compound
silicon oxynitride
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60501924A
Other languages
English (en)
Japanese (ja)
Other versions
JPH048511B2 (enExample
Inventor
ピーダーズ，ジヨン・ダブユ
Original Assignee
ヒユ−ズ・エアクラフト・カンパニ−
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ヒユ−ズ・エアクラフト・カンパニ− filed Critical ヒユ−ズ・エアクラフト・カンパニ−
Publication of JPS61502616A publication Critical patent/JPS61502616A/ja
Publication of JPH048511B2 publication Critical patent/JPH048511B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6338—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition the reactions being activated by other means than plasma or thermal, e.g. photo-CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
JP60501924A 1984-07-02 1985-04-22 改良されたシリコンオキシニトリド材料及びその製造方法 Granted JPS61502616A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/627,366 US4543271A (en) 1984-07-02 1984-07-02 Silicon oxynitride material and photochemical process for forming same
US627366 1984-07-02

Publications (2)

Publication Number Publication Date
JPS61502616A true JPS61502616A (ja) 1986-11-13
JPH048511B2 JPH048511B2 (enExample) 1992-02-17

Family

ID=24514356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60501924A Granted JPS61502616A (ja) 1984-07-02 1985-04-22 改良されたシリコンオキシニトリド材料及びその製造方法

Country Status (8)

Country Link
US (1) US4543271A (enExample)
EP (1) EP0188438B1 (enExample)
JP (1) JPS61502616A (enExample)
KR (1) KR890003018B1 (enExample)
DE (1) DE3578438D1 (enExample)
HK (1) HK93390A (enExample)
IL (1) IL75278A0 (enExample)
WO (1) WO1986000651A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4702936A (en) * 1984-09-20 1987-10-27 Applied Materials Japan, Inc. Gas-phase growth process
US4654226A (en) * 1986-03-03 1987-03-31 The University Of Delaware Apparatus and method for photochemical vapor deposition
DE3902628A1 (de) * 1989-01-30 1990-08-02 Hauni Elektronik Gmbh Duennschichtmaterial fuer sensoren oder aktuatoren und verfahren zu dessen herstellung
FR2651782B1 (fr) * 1989-09-14 1993-03-19 Air Liquide Procede pour la realisation d'un depot d'un revetement protecteur inorganique et amorphe sur un substrat polymerique organique.
FR2695118B1 (fr) * 1992-09-02 1994-10-07 Air Liquide Procédé de formation d'une couche barrière sur une surface d'un objet en verre.
DE69333722T2 (de) * 1993-05-31 2005-12-08 Stmicroelectronics S.R.L., Agrate Brianza Verfahren zur Verbesserung der Haftung zwischen Dielektrikschichten, an ihrer Grenzfläche, in der Herstellung von Halbleiterbauelementen
US6107194A (en) * 1993-12-17 2000-08-22 Stmicroelectronics, Inc. Method of fabricating an integrated circuit
US5439846A (en) * 1993-12-17 1995-08-08 Sgs-Thomson Microelectronics, Inc. Self-aligned method for forming contact with zero offset to gate
US6284584B1 (en) * 1993-12-17 2001-09-04 Stmicroelectronics, Inc. Method of masking for periphery salicidation of active regions
US5728224A (en) * 1995-09-13 1998-03-17 Tetra Laval Holdings & Finance S.A. Apparatus and method for manufacturing a packaging material using gaseous phase atmospheric photo chemical vapor deposition to apply a barrier layer to a moving web substrate
US6841439B1 (en) * 1997-07-24 2005-01-11 Texas Instruments Incorporated High permittivity silicate gate dielectric
US7115461B2 (en) * 1997-07-24 2006-10-03 Texas Instruments Incorporated High permittivity silicate gate dielectric
US6316820B1 (en) 1997-07-25 2001-11-13 Hughes Electronics Corporation Passivation layer and process for semiconductor devices
US6046101A (en) * 1997-12-31 2000-04-04 Intel Corporation Passivation technology combining improved adhesion in passivation and a scribe street without passivation
US6352940B1 (en) * 1998-06-26 2002-03-05 Intel Corporation Semiconductor passivation deposition process for interfacial adhesion
US20010052323A1 (en) * 1999-02-17 2001-12-20 Ellie Yieh Method and apparatus for forming material layers from atomic gasses
US20050227239A1 (en) * 2004-04-08 2005-10-13 Joyce Timothy H Microarray based affinity purification and analysis device coupled with solid state nanopore electrodes
DE202007001431U1 (de) * 2007-01-31 2007-05-16 Infineon Technologies Austria Ag Halbleiteranordnung und Leistungshalbleiterbauelement

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831029A (enExample) * 1971-08-26 1973-04-24

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1088852B (it) * 1976-11-01 1985-06-10 Rca Corp Struttura passivante per un dispositivo simeconduttore
US4181751A (en) * 1978-05-24 1980-01-01 Hughes Aircraft Company Process for the preparation of low temperature silicon nitride films by photochemical vapor deposition
JPS5559729A (en) * 1978-10-27 1980-05-06 Fujitsu Ltd Forming method of semiconductor surface insulating film
US4289797A (en) * 1979-10-11 1981-09-15 Western Electric Co., Incorporated Method of depositing uniform films of Six Ny or Six Oy in a plasma reactor
US4371587A (en) * 1979-12-17 1983-02-01 Hughes Aircraft Company Low temperature process for depositing oxide layers by photochemical vapor deposition
JPS5693344A (en) * 1979-12-26 1981-07-28 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831029A (enExample) * 1971-08-26 1973-04-24

Also Published As

Publication number Publication date
WO1986000651A1 (en) 1986-01-30
KR860700269A (ko) 1986-08-01
DE3578438D1 (de) 1990-08-02
US4543271A (en) 1985-09-24
IL75278A0 (en) 1985-09-29
KR890003018B1 (ko) 1989-08-18
HK93390A (en) 1990-11-16
EP0188438B1 (en) 1990-06-27
EP0188438A1 (en) 1986-07-30
JPH048511B2 (enExample) 1992-02-17

Similar Documents

Publication Publication Date Title
JPS61502616A (ja) 改良されたシリコンオキシニトリド材料及びその製造方法
TWI405865B (zh) 由有機胺基矽烷前驅物製造矽氧化物膜的方法
JP4358492B2 (ja) 熱化学気相成長法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法
US7642204B2 (en) Methods of forming fluorine doped insulating materials
US20060178019A1 (en) Low temperature deposition of silicon oxides and oxynitrides
US3798061A (en) Method for forming a single-layer nitride film or a multi-layer nitrude film on a portion of the whole of the surface of a semiconductor substrate or element
CN109166787B (zh) 一种氧化硅薄膜的可流动化学气相沉积方法
JPH03504618A (ja) 基板上への窒化けい素及び二酸化けい素フイルムの熱デポジシヨン法
EP0212691A1 (en) Low temperature chemical vapor deposition of silicon dioxide films
US3558348A (en) Dielectric films for semiconductor devices
US5532193A (en) Method for forming insulating film
US8420170B2 (en) Methods of forming glass on a substrate
JP2023546911A (ja) アルコキシジシロキサン、及びそれから製造される緻密なオルガノシリカ膜
US20250369102A1 (en) Lower k and higher hardness with improved plasma induced damage (pid) dielectric film deposition
JPH08321499A (ja) 硅素化合物膜およびその形成方法
KR100425533B1 (ko) 반도체 소자용 금속 실리케이트 게이트 절연막의 제조방법
WO1994027316A1 (en) Method of manufacturing side walls and semiconductor device having side walls
JPH01270508A (ja) シリコン酸化膜の形成方法
KR20050020758A (ko) 금속 유기 화학 기상 증착 및 금속 유기 옥시니트라이드및 금속 실리콘 옥시니트라이드의 원자층 증착