KR890001032B1 - 고율 스퍼터링(sputtering)장치 및 방법 - Google Patents

고율 스퍼터링(sputtering)장치 및 방법 Download PDF

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Publication number
KR890001032B1
KR890001032B1 KR8203138A KR820003138A KR890001032B1 KR 890001032 B1 KR890001032 B1 KR 890001032B1 KR 8203138 A KR8203138 A KR 8203138A KR 820003138 A KR820003138 A KR 820003138A KR 890001032 B1 KR890001032 B1 KR 890001032B1
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KR
South Korea
Prior art keywords
cathode
active plasma
high rate
rate sputtering
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR8203138A
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English (en)
Korean (ko)
Other versions
KR840000665A (ko
Inventor
디이 크랭크 제이므즈
Original Assignee
원본미기재
암펙크스 코오포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 원본미기재, 암펙크스 코오포레이션 filed Critical 원본미기재
Publication of KR840000665A publication Critical patent/KR840000665A/ko
Application granted granted Critical
Publication of KR890001032B1 publication Critical patent/KR890001032B1/ko
Expired legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR8203138A 1981-07-16 1982-07-14 고율 스퍼터링(sputtering)장치 및 방법 Expired KR890001032B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US28376481A 1981-07-16 1981-07-16
US283764 1981-07-16
US283,764 1981-07-16

Publications (2)

Publication Number Publication Date
KR840000665A KR840000665A (ko) 1984-02-25
KR890001032B1 true KR890001032B1 (ko) 1989-04-20

Family

ID=23087455

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8203138A Expired KR890001032B1 (ko) 1981-07-16 1982-07-14 고율 스퍼터링(sputtering)장치 및 방법

Country Status (11)

Country Link
JP (1) JPS5825476A (enrdf_load_stackoverflow)
KR (1) KR890001032B1 (enrdf_load_stackoverflow)
BR (1) BR8204080A (enrdf_load_stackoverflow)
DE (1) DE3226717A1 (enrdf_load_stackoverflow)
FR (1) FR2509755B1 (enrdf_load_stackoverflow)
GB (1) GB2101638B (enrdf_load_stackoverflow)
IE (1) IE53214B1 (enrdf_load_stackoverflow)
IT (1) IT1148359B (enrdf_load_stackoverflow)
MX (1) MX152639A (enrdf_load_stackoverflow)
NL (1) NL8202878A (enrdf_load_stackoverflow)
PT (1) PT75222B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100844375B1 (ko) * 2007-01-16 2008-07-07 (주)아이씨디 알에프 차폐 구조를 갖는 플라즈마 처리 장치

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2125441A (en) * 1982-07-13 1984-03-07 Christopher Elphick Tunnel magnetron for cathode sputtering
US4444643A (en) * 1982-09-03 1984-04-24 Gartek Systems, Inc. Planar magnetron sputtering device
JPS60149681U (ja) * 1984-03-15 1985-10-04 ダイコク電機株式会社 パチンコホ−ル用貸出機
JPH0772349B2 (ja) * 1987-05-12 1995-08-02 住友電気工業株式会社 大面積化合物薄膜の作製方法および装置
US4885070A (en) * 1988-02-12 1989-12-05 Leybold Aktiengesellschaft Method and apparatus for the application of materials
CH687111A5 (de) * 1992-05-26 1996-09-13 Balzers Hochvakuum Verfahren zum Erzeugen einer Niederspannungsentladung, Vakuumbehandlungsanlage hierfuer sowie Anwendung des Verfahrens.
JP2001343309A (ja) * 2000-06-01 2001-12-14 Kawasaki Steel Corp 金属分析試料の予備処理方法および装置
CN100594428C (zh) 2002-09-19 2010-03-17 Asml荷兰有限公司 辐射源、光刻装置和器件的制造方法
DE102004027897A1 (de) * 2004-06-09 2006-01-05 Leybold Optics Gmbh Vorrichtung und Verfahren zur Zerstäubung mit einem bewegbaren planaren Target
WO2016192814A1 (en) * 2015-06-05 2016-12-08 Applied Materials, Inc. Sputter deposition source, sputtering apparatus and method of operating thereof
DE102020100061B4 (de) 2020-01-03 2025-07-03 Schott Ag Kühlvorrichtung und Kühlverfahren für Sputtertargets
CN112626458A (zh) * 2020-12-08 2021-04-09 深圳市华星光电半导体显示技术有限公司 磁控溅射装置
WO2023274558A1 (de) 2021-07-02 2023-01-05 Schott Ag Kühlvorrichtung und kühlverfahren für sputtertargets

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE705794C (de) * 1937-04-29 1941-05-09 Bernhard Berghaus Verfahren und Vorrichtung zur Kathodenzerstaeubung
US3625848A (en) * 1968-12-26 1971-12-07 Alvin A Snaper Arc deposition process and apparatus
US3590777A (en) * 1969-03-13 1971-07-06 United Aircarft Corp Ingot feed drive
GB1354702A (en) * 1970-02-12 1974-06-05 Baxter Ltd Alexander Methods of and means for vacuum deposition
DE2301593C3 (de) * 1972-11-23 1979-05-03 Balzers Hochvakuum Gmbh, 6200 Wiesbaden Wechselvorrichtung für Targets für Kathodenzerstäubung
DE2528108B2 (de) * 1975-06-24 1977-11-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zum aufbringen von elektrisch leitenden schichten auf eine unterlage
DE2707144A1 (de) * 1976-02-19 1977-08-25 Sloan Technology Corp Kathodenzerstaeubungsvorrichtung
DE2856930A1 (de) * 1977-06-23 1981-02-12 H Hessner A device for absorbing urine with incontinent persons
US4142958A (en) * 1978-04-13 1979-03-06 Litton Systems, Inc. Method for fabricating multi-layer optical films
DE2832719A1 (de) * 1978-07-26 1980-02-07 Basf Ag Anordnung zur kompensation von ungleichen schreibfeldern in magnetischen datenspeichereinrichtungen, insbesondere in magnetplattenspeichern
DE2903291A1 (de) * 1979-01-29 1980-08-07 Siemens Ag Verfahren zur herstellung von abwechselnd uebereinanderliegenden metall- und glimmpolymerisationsschichten
JPS57120668A (en) * 1981-01-16 1982-07-27 Matsushita Electric Ind Co Ltd Method and apparatus for forming thin polymer film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100844375B1 (ko) * 2007-01-16 2008-07-07 (주)아이씨디 알에프 차폐 구조를 갖는 플라즈마 처리 장치

Also Published As

Publication number Publication date
PT75222B (en) 1984-11-19
IE53214B1 (en) 1988-08-31
IT8248820A0 (it) 1982-07-15
PT75222A (en) 1982-08-01
KR840000665A (ko) 1984-02-25
JPH0236675B2 (enrdf_load_stackoverflow) 1990-08-20
FR2509755A1 (fr) 1983-01-21
GB2101638A (en) 1983-01-19
JPS5825476A (ja) 1983-02-15
GB2101638B (en) 1985-07-24
IE821649L (en) 1983-01-16
IT1148359B (it) 1986-12-03
DE3226717C2 (enrdf_load_stackoverflow) 1988-10-06
NL8202878A (nl) 1983-02-16
MX152639A (es) 1985-10-02
BR8204080A (pt) 1983-07-05
DE3226717A1 (de) 1983-02-03
FR2509755B1 (fr) 1985-11-08

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