KR880701152A - 수동와이어 본딩장치 - Google Patents

수동와이어 본딩장치

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Publication number
KR880701152A
KR880701152A KR1019880700040A KR880700040A KR880701152A KR 880701152 A KR880701152 A KR 880701152A KR 1019880700040 A KR1019880700040 A KR 1019880700040A KR 880700040 A KR880700040 A KR 880700040A KR 880701152 A KR880701152 A KR 880701152A
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South Korea
Prior art keywords
bonding
wedge
bonding head
head
speed
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KR1019880700040A
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English (en)
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파라사트 파하드
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파라사트 파하드
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Publication of KR880701152A publication Critical patent/KR880701152A/ko

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    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • BPERFORMING OPERATIONS; TRANSPORTING
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    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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  • Wire Bonding (AREA)

Abstract

내용 없음

Description

수동와이어 본딩장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 본딩장치의 본딩헤드 측면도이다.

Claims (12)

  1. 본딩패드에 와이어(34)를 압착하기 위한 초음파 및/또는 열압착 웨이지(11)와, 본딩헤드(10)의 구동장치(20)을 제어하기 위한 수단을 구비하되, 상기 웨이지 (11)는, 본딩페드로 향하거나 멀어지는 방향, 특히 상/하방향으로, 이동되도록 하는 본딩헤드(10)의 부분이고, 상기 본딩페드는 상기 웨이지(11)에 대향하여 본딩 페드를 재치하도록 본딩헤드의 이동방향에 대하여 거의 횡방향으로 이동할 수 있는 베이스 위에 배치 되게한 수동와이어 본딩장치에 있어서, (a) 높은 스타트위치(54)에서 제1서어치위치(53)으로 본딩헤드(10)를 하강시키고, (b) 제1본딩페드를 웨이지(11)에 재치한 후에, 본딩페드에서 본딩웨이어(34)를 알압하는 동안 본딩헤드(10)를 하강시키며, (c) 본딩헤드(10)를 가설정된 루-프높이(65)까지 이동시키는 동안, 제1본딩 페드에서 본딩페드(10)를 들어올리고, (d) 본딩헤드(10)을 제2서어치위치(66)로 하강시키며, (e) 웨이지(11)에 대항하여 제2본딩 페드를 재치시킨 후에, 이 본딩 페드에서 본딩와이어(34)를 압압하는 동안 상기 제2본딩페드로 본딩헤드(10)를 하강시키며, (f) 본딩된 와이어 길이를 절단한 후에, 본딩헤드(10)를 스타트위치(54)로 상승시키는 싸이클에 따라, 상기 본딩헤드(10)는 구동장치, 특히 dc서보모터(20)에 의해 이동되도록 하되, 거리 및 속도제어장치(44-51)와 피드백장치(28)가 배치된 구동장치(20)에 의해 상기 본딩헤드(10)의 각 부분이동구간은 주행거리, 주행속도 및 정지기간에 따라 개별적으로 조절될 수 있음과 동시에 실시에 대하여 체크될 수 있도록 구성됨을 특징으로 하는 수동와이어 본딩장치.
  2. 제1항에 있어서, 제어장치는, (a) 본딩헤드(10)이동을 개시하기 위한 수동으로 작동되는 스위치(스타트 버턴 스위치(53))와, (b) 스타트위치 또는 높이(54), 제1서어치 위치 또는 높이 (55), 제2서어치 위치 또는 높이(66) 및 루-프위치 또는 높이 (65)를 각각 설정하기 위한 거리 포턴셔미터(44,45,46,47)와, (c)스타트 위치(54)에서 제1서어치위치(55)까지, 제1서어치위치(55)에서 제1"터치다운"위치까지,제1"터치다운"위치에서 루-프위치(65)까지, 루-프위치(65)에서 제2"서어치위치(66)까지, 제2서어치위치(66)에서 제2터치다운"위치까지 및 제2"터치다운위치"에서 다시 원래의 스타트위치(54)까지의 본딩헤드(10)의 각각의 속도를 설정하기 위한 속도포텬셔미터(48,49,50,51)로 구성하되, 상기 속도 포텬셔미터(48 내지 51)는 속도선택장치(31)를 통하여 구동장치(20)에 결합되게 함을 특징으로 하는 수동와이어본딩장치.
  3. 제1항, 또는 제2항에 있어서, 상기 피드백장치는 “피드백" 포텬셔미터를 구비하되, 이 피드백장치는 구동 장치(20)의 출력(출력축(21))에 기계적으로 결합되고, 상기 포텬셔미터의 출력은 거기포텬셔미터(44 내지 47)에 의해 소정으로 설정된 값과 상기 “피드백" 포텬셔미터(28)에 의해 검출된 실제 이동값을 비교하여 에러신소(NO) 또는 정정신호(TES)를 발생하는 거리비교장치에 접속되도록 구성됨을 특징으로하는 수동와어 본딩장치.
  4. 제1항 내지 제3항중 어느하나의 항에 있어서, 상기 속도포텬셔미터(48 내지 51)에 결합된 속도선택장치(31)는 한편으로는 "피드백"포텬셔미터(28)에 다른 편으로는 속도피드백장치(32)로서 작동하는 속도발전기에 결합하되, 상기 "피드백"포텬셔미터(28)는 속도전환점을 결정하며, 상기 속도계발전기(32)는 소정으로기설정된 속도로부터의 편의에 의해 본딩작동의 정정이나 또는 중지가 가능하도록 본딩헤드의 실제이동 속도를 검출하도록 구성됨을 특징으로하는 수동와이어 본딩장치.
  5. 제1항 내지 제4항중 어느 하나의 항에 있어서, 거리, 속도 및/또는 중지의 에러신호에 대응하여, 스타트위치(54)로 본딩헤드(10)를 복귀시키기 위한 리세트수단(리세트 스위치(52)가 구비됨을 특징으로 하는 수동와이어본딩장치.
  6. 제1항 내지 제5항중 어느하나의 항에 있어서, 기설정되는 루-프 높이를 결정할 수 있는 제1본딩패드의 "터치다운"높이를 기억하기 위한 메모리(60)가 구비됨을 특징으로 하는 수동와이어 본딩장치.
  7. 제1항 내지 제6항중 어느하나의 항에 있어서, 웨이지(11)는 본딩헤드(10)의 이동방향과 대략적으로 같은 방향에서 이동, 특히 선회하도록 본딩헤드(10)에 장착하되, 상기 웨이지(11)는 본딩패드에 터치다운중에 억압부재(예를 들면 인장코일스프링15)의 작용에 대항하여 스토퍼(16)에 의하여 한정되는 제로위치로부터 "터치다운"위치까지 이동할 수 있도록 구성됨을 특징으로 하는 수동와이어 본딩장치.
  8. 제7항에 있어서, 상기의 이동자재하에 장착된 웨이지(11)가 "터치다운"중에 웨이지(11)의 상대운동을 검출하며, 본딩헤드(10)의 구동장치(20)에 이동정지 신호를 발생하도록 하는 센서, 바람직하기로 광차페판(포그타입광차페판(18)과 협동하도록 구성됨을 특징으로 하는 수동와이어 본딩장치.
  9. 제8항에 있어서, 가설정된 웨이지(11)의 상대적인 거리(오보드라이브)는 상기센서(광차페판(18))에 의해 설정될 수 있음을 특징으로하는 수동와이어 본딩장치.
  10. 제1항 내지 제9항중 어느하나의 항에 있어서, 본딩헤드(10)에 이동자재하게 장착된 웨이지(11)는 진동댐핑장치, 특히 웨이지(11)나 또는 웨이지의 지지대(14)에 각각 작용하는 솔레노이드(33)와 협동하도록 구성하되, 상기 진동 댐핑장치(솔레노이드(33))는, 스타트위치(54)에서 제1서어치위치(55)로 본딩헤드(10)가 이동하는 동안과 루-프위치(65)에서 제2서어치위치(66)로 본딩헤드(10)가 이동하는 동안 각각 작동할 수 있도록 구성됨을 특징으로 하는 수동와이어 본딩장치.
  11. 제1항 내지 제10항중 어느 하나의 항에 있어서, "피드백"포텬셔미터에 접속된 프로그램장치(60)는 상기 웨이지(11)와 협동하는 와이어크램프(12)와 결합되고, 또한 상기 프로그램장치(60)는 상기 크램프(솔레노이드(38))을 개폐하며 상기 와이어크램프(12)를 통하여 연장되는 본딩와이어(34)의 방향에서 상기 크램프를 웨이지(11)(솔레노이드(41,44)에 대하여 상대적으로 이동하기 위한 작동장치와 결합하되, 상기 작동장치(솔레노이드(38,41,44))는 상기 프로그램장치(60)에 의해 제어됨을 특징으로하는 수동와이어 본딩장치.
  12. 제1항 내지 제11항중의 어느 하나의 항에 있어서, 상기 본딩헤드(10)는 한단부가 본딩헤드(10)에 결합되고 다른 단부는 구동모터(20)에 의해 회전되는 편심부재(22)에 결합된 연동장치 또는 플렌저(23)의 수단에 의해, 상승/하강 방향에서 이동할 수 있도록 구성됨을 특징으로 하는 수동와이어 본딩장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880700040A 1986-05-16 1986-05-15 수동와이어 본딩장치 KR880701152A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19863616651 DE3616651A1 (de) 1986-05-16 1986-05-16 Vorrichtung zum manuellen drahtbonden
DEP3616651.0 1986-05-16
PCT/EP1987/000258 WO1987006864A2 (en) 1986-05-16 1987-05-15 Device for manual wire bonding

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KR880701152A true KR880701152A (ko) 1988-07-25

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US (1) US4878609A (ko)
EP (1) EP0267249B1 (ko)
JP (1) JPH01500549A (ko)
KR (1) KR880701152A (ko)
AT (1) ATE92385T1 (ko)
DE (2) DE3616651A1 (ko)
WO (1) WO1987006864A2 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4024687C2 (de) * 1990-08-03 2001-02-22 Daimlerchrysler Aerospace Ag Beam-Lead-Bondvorrichtung
DE4335468A1 (de) * 1993-10-18 1995-04-20 F&K Delvotec Bondtechnik Gmbh Vorrichtung und Verfahren zum Drahtbonden
US5813590A (en) * 1995-12-18 1998-09-29 Micron Technology, Inc. Extended travel wire bonding machine
JPH11191568A (ja) * 1997-12-25 1999-07-13 Shinkawa Ltd ワイヤボンディング方法及び装置
DE50110953D1 (de) 2001-11-07 2006-10-19 F & K Delvotec Bondtech Gmbh Prüfverfahren für Bondverbindungen und Drahtbonder
DE502004005212D1 (de) * 2004-08-11 2007-11-22 F & K Delvotec Bondtech Gmbh Drahtbonder mit einer Kamera, einer Bildverarbeitungseinrichtung, Speichermittel und Vergleichermittel und Verfahren zum Betrieb eines solchen
DE602006015192D1 (de) 2006-09-05 2010-08-12 Fraunhofer Ges Forschung Verfahren und Vorrichtung zur Regelung der Herstellung von Drahtbondverbindungen
CN112828440B (zh) * 2021-03-29 2022-06-28 上海骄成超声波技术股份有限公司 一种超声波焊机的焊接方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3776447A (en) * 1969-06-30 1973-12-04 Texas Instruments Inc Automatic semiconductor bonding machine
US3596050A (en) * 1970-05-05 1971-07-27 Union Carbide Corp Automatic torch height control
US3727822A (en) * 1970-10-05 1973-04-17 Gen Electric Electromagnetic force system for integrated circuit fabrication
US4073424A (en) * 1976-08-17 1978-02-14 Kulicke And Soffa Industries Inc. Second bond positioning wire bonder
US4266710A (en) * 1978-11-22 1981-05-12 Kulicke And Soffa Industries Inc. Wire bonding apparatus
JPS55141736A (en) * 1979-04-23 1980-11-05 Hitachi Ltd Method for wirebonding and wirebonder
JPS5698900A (en) * 1980-01-07 1981-08-08 Hitachi Ltd Device for automatically wiring printed circuit board
US4475681A (en) * 1982-05-24 1984-10-09 The Micromanipulator Co., Inc. Bonder apparatus
JPS5950536A (ja) * 1982-09-16 1984-03-23 Toshiba Corp ワイヤボンデイング装置
US4555052A (en) * 1983-02-28 1985-11-26 Fairchild Camera & Instrument Corporation Lead wire bond attempt detection
US4597522A (en) * 1983-12-26 1986-07-01 Kabushiki Kaisha Toshiba Wire bonding method and device
DE3417649A1 (de) * 1984-05-12 1985-11-14 Hoechst Ag, 6230 Frankfurt Verfahren zur herstellung von kristallinen natriumsilikaten

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DE3786880D1 (de) 1993-09-09
WO1987006864A2 (en) 1987-11-19
DE3616651C2 (ko) 1988-06-01
DE3616651A1 (de) 1987-11-19
JPH01500549A (ja) 1989-02-23
EP0267249B1 (de) 1993-08-04
US4878609A (en) 1989-11-07
WO1987006864A3 (fr) 1988-02-25
EP0267249A1 (de) 1988-05-18
ATE92385T1 (de) 1993-08-15

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