DE602006015192D1 - Verfahren und Vorrichtung zur Regelung der Herstellung von Drahtbondverbindungen - Google Patents

Verfahren und Vorrichtung zur Regelung der Herstellung von Drahtbondverbindungen

Info

Publication number
DE602006015192D1
DE602006015192D1 DE602006015192T DE602006015192T DE602006015192D1 DE 602006015192 D1 DE602006015192 D1 DE 602006015192D1 DE 602006015192 T DE602006015192 T DE 602006015192T DE 602006015192 T DE602006015192 T DE 602006015192T DE 602006015192 D1 DE602006015192 D1 DE 602006015192D1
Authority
DE
Germany
Prior art keywords
bond
wire
generation
steps during
deformation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006015192T
Other languages
English (en)
Inventor
Holger Gaul
Herbert Prof Dr-In Reichl
Martin Schneider-Ramelow
Klaus-Dieter Lang
Ute Geissler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Technische Universitaet Berlin
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Technische Universitaet Berlin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV, Technische Universitaet Berlin filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Publication of DE602006015192D1 publication Critical patent/DE602006015192D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H01L2224/78314—Shape
    • H01L2224/78317—Shape of other portions
    • H01L2224/78318—Shape of other portions inside the capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H01L2224/85206—Direction of oscillation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01041—Niobium [Nb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/203—Ultrasonic frequency ranges, i.e. KHz
    • H01L2924/20303—Ultrasonic frequency [f] 50 Khz=<f< 75 KHz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/203—Ultrasonic frequency ranges, i.e. KHz
    • H01L2924/20304—Ultrasonic frequency [f] 75 Khz=<f< 100 KHz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/203—Ultrasonic frequency ranges, i.e. KHz
    • H01L2924/20305—Ultrasonic frequency [f] 100 Khz=<f< 125 KHz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20751—Diameter ranges larger or equal to 10 microns less than 20 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20753—Diameter ranges larger or equal to 30 microns less than 40 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20754—Diameter ranges larger or equal to 40 microns less than 50 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20755—Diameter ranges larger or equal to 50 microns less than 60 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20756—Diameter ranges larger or equal to 60 microns less than 70 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20757—Diameter ranges larger or equal to 70 microns less than 80 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20758—Diameter ranges larger or equal to 80 microns less than 90 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20759—Diameter ranges larger or equal to 90 microns less than 100 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/2076—Diameter ranges equal to or larger than 100 microns

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Coating With Molten Metal (AREA)
  • Wire Processing (AREA)
DE602006015192T 2006-09-05 2006-09-05 Verfahren und Vorrichtung zur Regelung der Herstellung von Drahtbondverbindungen Active DE602006015192D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP06018609A EP1897648B1 (de) 2006-09-05 2006-09-05 Verfahren und Vorrichtung zur Regelung der Herstellung von Drahtbondverbindungen

Publications (1)

Publication Number Publication Date
DE602006015192D1 true DE602006015192D1 (de) 2010-08-12

Family

ID=37696087

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006015192T Active DE602006015192D1 (de) 2006-09-05 2006-09-05 Verfahren und Vorrichtung zur Regelung der Herstellung von Drahtbondverbindungen

Country Status (5)

Country Link
US (1) US8020746B2 (de)
EP (1) EP1897648B1 (de)
AT (1) ATE472387T1 (de)
DE (1) DE602006015192D1 (de)
WO (1) WO2008028906A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007054626A1 (de) * 2007-11-12 2009-05-14 Hesse & Knipps Gmbh Verfahren und Vorrichtung zum Ultraschallbonden
US20120074206A1 (en) * 2010-09-27 2012-03-29 Kulicke And Soffa Industries, Inc. Methods of forming wire bonds for wire loops and conductive bumps
US20140374151A1 (en) * 2013-06-24 2014-12-25 Jia Lin Yap Wire bonding method for flexible substrates
US10272517B2 (en) * 2014-06-12 2019-04-30 Nissan Motor Co., Ltd. Bonding state inspection method
EP3603826B1 (de) 2018-07-31 2023-05-10 Infineon Technologies AG Verfahren zur kalibrierung einer ultraschallverbindungsmaschine
EP4028199A1 (de) * 2019-09-11 2022-07-20 Hesse GmbH Ultraschallwerkzeug und ultraschallverbindungsvorrichtung hierfür
DE102019124335A1 (de) * 2019-09-11 2021-03-11 Hesse Gmbh Bondvorrichtung
DE102019124334A1 (de) * 2019-09-11 2021-03-11 Hesse Gmbh Bondanordnung und Bondwerkzeug

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE45217C (de) Dr. HERM. ARON in Berlin W., Königin Auguslastrafse 40 Neuerung an Elektricitätszählern
US3534591A (en) * 1968-09-26 1970-10-20 Shurtronics Corp Automated ultrasonic bond tester
US3784079A (en) 1972-04-03 1974-01-08 Motorola Inc Ultrasonic bond control apparatus
US3890831A (en) * 1973-01-19 1975-06-24 Us Navy Ultrasonic bond monitor
US4047657A (en) 1976-11-01 1977-09-13 Branson Ultrasonics Corporation Method and apparatus for joining metal workpieces using high frequency vibratory energy
DE2823361A1 (de) 1978-05-29 1979-12-13 Siemens Ag Ueberwachung von ultraschall- und schallgeraeten
DE2946154A1 (de) 1979-11-13 1981-06-04 Zschimmer, Gero, 8000 München Ultraschall-sonde
US4341574A (en) 1980-08-25 1982-07-27 Texas Instruments Incorporated Ultrasonic bond energy monitor
US4373653A (en) 1981-09-10 1983-02-15 Raytheon Company Method and apparatus for ultrasonic bonding
JPS5950536A (ja) 1982-09-16 1984-03-23 Toshiba Corp ワイヤボンデイング装置
DE3245355A1 (de) 1982-12-08 1984-06-14 Brown, Boveri & Cie Ag, 6800 Mannheim Ultraschall-schweissmaschine zum metallschweissen
US4555052A (en) 1983-02-28 1985-11-26 Fairchild Camera & Instrument Corporation Lead wire bond attempt detection
US4496095A (en) 1983-04-12 1985-01-29 Fairchild Industries, Inc. Progressive ultrasonic welding system
DD219338A1 (de) 1983-11-15 1985-02-27 Fz Elektronik Teltow Veb Verfahren zum ultraschallschweissen
DE3429776A1 (de) 1984-08-13 1986-02-13 Siemens AG, 1000 Berlin und 8000 München Verfahren zur qualitaetskontrolle beim ultraschallschweissen sowie zugehoerige vorrichtung
DE3667930D1 (de) 1985-07-12 1990-02-08 Siemens Ag Verfahren zum regeln des prozessverlaufes und zur qualitaetskontrolle beim ultraschallschweissen von werkstuecken.
JPS6291094A (ja) 1985-10-16 1987-04-25 Victor Co Of Japan Ltd デジタル色信号処理回路
DE3537551A1 (de) 1985-10-22 1987-04-23 Delvotec S A Bondkapillare sowie verfahren zum bonden unter verwendung einer derartigen bondkapillare
KR880701152A (ko) 1986-05-16 1988-07-25 파라사트 파하드 수동와이어 본딩장치
US4815001A (en) 1986-05-30 1989-03-21 Crestek, Inc. Ultrasonic wire bonding quality monitor and method
DE3701652A1 (de) 1987-01-21 1988-08-04 Siemens Ag Ueberwachung von bondparametern waehrend des bondvorganges
DE3703694A1 (de) 1987-02-06 1988-08-18 Dynapert Delvotec Gmbh Ball-bondverfahren und vorrichtung zur durchfuehrung derselben
DE3825373A1 (de) 1988-07-26 1990-02-01 Deubzer Eltec Gmbh Dynapert De Vorrichtung und verfahren zur gesteuerten zufuehrung eines bonddrahtes zum "wedge" oder zur kapillare eines bondkopfes
DE3805584A1 (de) 1988-02-23 1989-08-31 Dynapert Delvotec Gmbh Vorrichtung und verfahren zur gesteuerten zufuehrung eines bonddrahtes zum "wedge" oder zur kapillare eines bondkopfes
GB8826488D0 (en) 1988-11-11 1988-12-14 Emhart Deutschland Quality control for wire bonding
DE59104416D1 (de) 1991-02-15 1995-03-09 Esec Sa Verfahren und Einrichtung zur Messung der Schwingungsamplitude an einem Energietransducer.
DE4131565C2 (de) 1991-09-18 2002-04-25 Bleich Karl Heinz Verfahren zur Optimierung des Schweißprozesses bei Bondverfahren
DE69216761T2 (de) 1991-10-30 1997-07-03 F&K Delvotec Bondtechnik Gmbh Steuerungssystem
GB2270868B (en) 1992-09-08 1995-03-22 Emhart Inc Control system
JP2705423B2 (ja) * 1992-01-24 1998-01-28 株式会社日立製作所 超音波接合装置及び品質モニタリング方法
GB2271306B (en) 1992-10-06 1995-06-07 Emhart Inc Tab process control system
DE4335468A1 (de) 1993-10-18 1995-04-20 F&K Delvotec Bondtechnik Gmbh Vorrichtung und Verfahren zum Drahtbonden
DE4447073C1 (de) 1994-12-29 1996-07-18 Bosch Gmbh Robert Verfahren zum Prüfen von durch Ultraschalldrahtbonden hergestellten Verbindungen
DE19618320A1 (de) 1996-04-30 1997-11-13 F&K Delvotec Bondtechnik Gmbh Vorrichtung zum "Ball"-Bonden
ATE319980T1 (de) 1997-12-19 2006-03-15 Bernard Siu Verfahren und vorrichtung zur auswertung der integrität von verbindungen mittels laserinduziertem ultraschall
DE19812706A1 (de) 1998-03-23 1999-10-07 F&K Delvotec Bondtechnik Gmbh Verfahren und Vorrichtung zum "ball-bonden"
DE19814118A1 (de) 1998-03-30 1999-10-14 F&K Delvotec Bondtechnik Gmbh Vorrichtung zum Thermokompressionsbonden, und Thermokompressionsbonden
US6279810B1 (en) * 2000-02-23 2001-08-28 Asm Assembly Automation Ltd Piezoelectric sensor for measuring bonding parameters
DE10110048A1 (de) * 2001-03-02 2002-09-05 Bosch Gmbh Robert Verfahren zum Prüfen von durch Ultraschall-Drahtbonden hergestellten Verbindungen
KR20030066344A (ko) * 2002-02-01 2003-08-09 에섹 트레이딩 에스에이 와이어본더로 접합시에 최적의 접합 파라미터들을결정하기 위한 방법
EP1343201A1 (de) 2002-03-08 2003-09-10 F &amp; K Delvotec Bondtechnik GmbH "Verfahren und Anordnung zur Herstellung und Qualitätsprüfung einer Drahtbondverbindung"
TWI229397B (en) 2002-10-16 2005-03-11 Esec Trading Sa Method for determining optimum bond parameters when bonding with a wire bonder
CN1956816A (zh) 2004-06-01 2007-05-02 赫西和奈普斯有限责任公司 用于检验引线焊接连接的方法及装置
DE502004005212D1 (de) 2004-08-11 2007-11-22 F & K Delvotec Bondtech Gmbh Drahtbonder mit einer Kamera, einer Bildverarbeitungseinrichtung, Speichermittel und Vergleichermittel und Verfahren zum Betrieb eines solchen

Also Published As

Publication number Publication date
EP1897648B1 (de) 2010-06-30
US8020746B2 (en) 2011-09-20
EP1897648A1 (de) 2008-03-12
US20100025453A1 (en) 2010-02-04
ATE472387T1 (de) 2010-07-15
WO2008028906A1 (en) 2008-03-13

Similar Documents

Publication Publication Date Title
DE602006015192D1 (de) Verfahren und Vorrichtung zur Regelung der Herstellung von Drahtbondverbindungen
MY155362A (en) Method for quality control during ultrasonic bonding
JP2008500904A (ja) 超音波発振器の振動振幅の測定及び／又は調整のための方法及び超音波溶接装置
TW200614407A (en) Semiconductor device, method and apparatus for testing same, and method for manufacturing semiconductor device
ATE533219T1 (de) Verfahren und vorrichtung zum beglaubigen einer stromversorgung
DE602005017130D1 (de) Verfahren und vorrichtung zur messung von ödemen
SG150377A1 (en) Adhesive sheet for producing semiconductor device, semiconductor device therewith, and manufacturing method therefor
ATE456125T1 (de) Verfahren und vorrichtung für die auswahl akustischer einheiten und sprachsynthesevorrichtung
MY158655A (en) Bonding device, ultrasonic transducer and bonding method
JPWO2014112307A1 (ja) 接合状態検査方法
PT1324031E (pt) Sistema de ensaio de ancoragem ao solo
EP4336143A3 (de) Mikromechanisches messsystem zur messung von dehnungen an einem messobjekt und kompensation isotrop wirkender dehnung
ATE509610T1 (de) Vibrierende massagevorrichtung
JP5136107B2 (ja) 接合良否検査方法および接合良否検査装置
Althoff et al. Improving the bond quality of copper wire bonds using a friction model approach
ATE417962T1 (de) Verfahren und vorrichtung um schienenwegparametern zu messen
ATE520964T1 (de) Verfahren und vorrichtung zur erfassung physikalischer parameter
ATE355927T1 (de) Verfahren und vorrichtung zur prüfung einer drahtbondverbindung
TWI266864B (en) Method of performing rupture event scanning and transducer-based sensor system
KR20170063568A (ko) 접착 비드 또는 밀봉 비드의 경화 거동을 결정하기 위한 방법 및 장치
ATE440675T1 (de) Verfahren zum auftragen von klebstoff
ATE424607T1 (de) Verfahren und vorrichtung zur generierung von audiokomponenten
Han et al. Bondability window and power input for wire bonding
DE602007000985D1 (de) Verfahren zur Parameteridentifizierung von einem Elektromotorkabel
ATE380896T1 (de) Vorrichtung zum aufziehen einer kardiergarnitur mit kraftmesseinrichtung