ATE472387T1 - Verfahren und vorrichtung zur regelung der herstellung von drahtbondverbindungen - Google Patents

Verfahren und vorrichtung zur regelung der herstellung von drahtbondverbindungen

Info

Publication number
ATE472387T1
ATE472387T1 AT06018609T AT06018609T ATE472387T1 AT E472387 T1 ATE472387 T1 AT E472387T1 AT 06018609 T AT06018609 T AT 06018609T AT 06018609 T AT06018609 T AT 06018609T AT E472387 T1 ATE472387 T1 AT E472387T1
Authority
AT
Austria
Prior art keywords
bond
wire
generation
steps during
deformation
Prior art date
Application number
AT06018609T
Other languages
English (en)
Inventor
Holger Gaul
Herbert Reichl
Martin Schneider-Ramelow
Klaus-Dieter Lang
Ute Geissler
Original Assignee
Univ Berlin Tech
Fraunhofer Ges Forschung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Berlin Tech, Fraunhofer Ges Forschung filed Critical Univ Berlin Tech
Application granted granted Critical
Publication of ATE472387T1 publication Critical patent/ATE472387T1/de

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004Wire welding
    • B23K20/005Capillary welding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313Wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313Wedge
    • H01L2224/78314Shape
    • H01L2224/78317Shape of other portions
    • H01L2224/78318Shape of other portions inside the capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518Translational movements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • H01L2224/85206Direction of oscillation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/859Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01041Niobium [Nb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01057Lanthanum [La]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12042LASER
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/203Ultrasonic frequency ranges, i.e. KHz
    • H01L2924/20303Ultrasonic frequency [f] 50 Khz=<f< 75 KHz
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/203Ultrasonic frequency ranges, i.e. KHz
    • H01L2924/20304Ultrasonic frequency [f] 75 Khz=<f< 100 KHz
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/203Ultrasonic frequency ranges, i.e. KHz
    • H01L2924/20305Ultrasonic frequency [f] 100 Khz=<f< 125 KHz
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20751Diameter ranges larger or equal to 10 microns less than 20 microns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20752Diameter ranges larger or equal to 20 microns less than 30 microns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20753Diameter ranges larger or equal to 30 microns less than 40 microns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20754Diameter ranges larger or equal to 40 microns less than 50 microns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20755Diameter ranges larger or equal to 50 microns less than 60 microns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20756Diameter ranges larger or equal to 60 microns less than 70 microns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20757Diameter ranges larger or equal to 70 microns less than 80 microns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20758Diameter ranges larger or equal to 80 microns less than 90 microns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20759Diameter ranges larger or equal to 90 microns less than 100 microns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/2076Diameter ranges equal to or larger than 100 microns

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Coating With Molten Metal (AREA)
  • Wire Processing (AREA)
AT06018609T 2006-09-05 2006-09-05 Verfahren und vorrichtung zur regelung der herstellung von drahtbondverbindungen ATE472387T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP06018609A EP1897648B1 (de) 2006-09-05 2006-09-05 Verfahren und Vorrichtung zur Regelung der Herstellung von Drahtbondverbindungen

Publications (1)

Publication Number Publication Date
ATE472387T1 true ATE472387T1 (de) 2010-07-15

Family

ID=37696087

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06018609T ATE472387T1 (de) 2006-09-05 2006-09-05 Verfahren und vorrichtung zur regelung der herstellung von drahtbondverbindungen

Country Status (5)

Country Link
US (1) US8020746B2 (de)
EP (1) EP1897648B1 (de)
AT (1) ATE472387T1 (de)
DE (1) DE602006015192D1 (de)
WO (1) WO2008028906A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007054626A1 (de) * 2007-11-12 2009-05-14 Hesse & Knipps Gmbh Verfahren und Vorrichtung zum Ultraschallbonden
US20120074206A1 (en) * 2010-09-27 2012-03-29 Kulicke And Soffa Industries, Inc. Methods of forming wire bonds for wire loops and conductive bumps
US20140374151A1 (en) * 2013-06-24 2014-12-25 Jia Lin Yap Wire bonding method for flexible substrates
US10272517B2 (en) * 2014-06-12 2019-04-30 Nissan Motor Co., Ltd. Bonding state inspection method
US20190217130A1 (en) * 2016-08-11 2019-07-18 Sonify Biosciences, Llc Method and system for ultrasound induced hyperthermia with microwave thermometry feedback
EP3603826B1 (de) * 2018-07-31 2023-05-10 Infineon Technologies AG Verfahren zur kalibrierung einer ultraschallverbindungsmaschine
DE102019124334A1 (de) * 2019-09-11 2021-03-11 Hesse Gmbh Bondanordnung und Bondwerkzeug
DE102019124332A1 (de) * 2019-09-11 2021-03-11 Hesse Gmbh Vorrichtung und Verfahren zum Erfassen einer Temperatur eines Bondwerkzeugs beim laserunterstützen Ultraschallbonden
DE102019124335A1 (de) 2019-09-11 2021-03-11 Hesse Gmbh Bondvorrichtung
WO2021047737A1 (de) 2019-09-11 2021-03-18 Hesse Gmbh Ultraschallwerkzeug und ultraschallverbindungsvorrichtung hierfür
US20250187103A1 (en) * 2023-12-07 2025-06-12 Kulicke And Soffa Industries, Inc. Conductive pins, power modules, ultrasonic welding systems, and methods of using the same

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE45217C (de) Dr. HERM. ARON in Berlin W., Königin Auguslastrafse 40 Neuerung an Elektricitätszählern
US3534591A (en) * 1968-09-26 1970-10-20 Shurtronics Corp Automated ultrasonic bond tester
US3784079A (en) 1972-04-03 1974-01-08 Motorola Inc Ultrasonic bond control apparatus
US3890831A (en) * 1973-01-19 1975-06-24 Us Navy Ultrasonic bond monitor
US4047657A (en) 1976-11-01 1977-09-13 Branson Ultrasonics Corporation Method and apparatus for joining metal workpieces using high frequency vibratory energy
DE2823361A1 (de) 1978-05-29 1979-12-13 Siemens Ag Ueberwachung von ultraschall- und schallgeraeten
DE2946154A1 (de) 1979-11-13 1981-06-04 Zschimmer, Gero, 8000 München Ultraschall-sonde
US4341574A (en) 1980-08-25 1982-07-27 Texas Instruments Incorporated Ultrasonic bond energy monitor
US4373653A (en) 1981-09-10 1983-02-15 Raytheon Company Method and apparatus for ultrasonic bonding
JPS5950536A (ja) 1982-09-16 1984-03-23 Toshiba Corp ワイヤボンデイング装置
DE3245355A1 (de) 1982-12-08 1984-06-14 Brown, Boveri & Cie Ag, 6800 Mannheim Ultraschall-schweissmaschine zum metallschweissen
US4555052A (en) 1983-02-28 1985-11-26 Fairchild Camera & Instrument Corporation Lead wire bond attempt detection
US4496095A (en) 1983-04-12 1985-01-29 Fairchild Industries, Inc. Progressive ultrasonic welding system
DD219338A1 (de) 1983-11-15 1985-02-27 Fz Elektronik Teltow Veb Verfahren zum ultraschallschweissen
DE3429776A1 (de) 1984-08-13 1986-02-13 Siemens AG, 1000 Berlin und 8000 München Verfahren zur qualitaetskontrolle beim ultraschallschweissen sowie zugehoerige vorrichtung
EP0208310B1 (de) 1985-07-12 1990-01-03 Siemens Aktiengesellschaft Verfahren zum Regeln des Prozessverlaufes und zur Qualitätskontrolle beim Ultraschallschweissen von Werkstücken
JPS6291094A (ja) 1985-10-16 1987-04-25 Victor Co Of Japan Ltd デジタル色信号処理回路
DE3537551A1 (de) 1985-10-22 1987-04-23 Delvotec S A Bondkapillare sowie verfahren zum bonden unter verwendung einer derartigen bondkapillare
KR880701152A (ko) 1986-05-16 1988-07-25 파라사트 파하드 수동와이어 본딩장치
US4815001A (en) 1986-05-30 1989-03-21 Crestek, Inc. Ultrasonic wire bonding quality monitor and method
DE3701652A1 (de) 1987-01-21 1988-08-04 Siemens Ag Ueberwachung von bondparametern waehrend des bondvorganges
DE3703694A1 (de) 1987-02-06 1988-08-18 Dynapert Delvotec Gmbh Ball-bondverfahren und vorrichtung zur durchfuehrung derselben
DE3805584A1 (de) 1988-02-23 1989-08-31 Dynapert Delvotec Gmbh Vorrichtung und verfahren zur gesteuerten zufuehrung eines bonddrahtes zum "wedge" oder zur kapillare eines bondkopfes
DE3825373A1 (de) 1988-07-26 1990-02-01 Deubzer Eltec Gmbh Dynapert De Vorrichtung und verfahren zur gesteuerten zufuehrung eines bonddrahtes zum "wedge" oder zur kapillare eines bondkopfes
GB8826488D0 (en) 1988-11-11 1988-12-14 Emhart Deutschland Quality control for wire bonding
DE59104416D1 (de) 1991-02-15 1995-03-09 Esec Sa Verfahren und Einrichtung zur Messung der Schwingungsamplitude an einem Energietransducer.
DE4131565C2 (de) 1991-09-18 2002-04-25 Bleich Karl Heinz Verfahren zur Optimierung des Schweißprozesses bei Bondverfahren
GB2270868B (en) 1992-09-08 1995-03-22 Emhart Inc Control system
ATE147672T1 (de) 1991-10-30 1997-02-15 F&K Delvotec Bondtechnik Gmbh Steuerungssystem
JP2705423B2 (ja) * 1992-01-24 1998-01-28 株式会社日立製作所 超音波接合装置及び品質モニタリング方法
GB2271306B (en) 1992-10-06 1995-06-07 Emhart Inc Tab process control system
DE4335468A1 (de) 1993-10-18 1995-04-20 F&K Delvotec Bondtechnik Gmbh Vorrichtung und Verfahren zum Drahtbonden
DE4447073C1 (de) 1994-12-29 1996-07-18 Bosch Gmbh Robert Verfahren zum Prüfen von durch Ultraschalldrahtbonden hergestellten Verbindungen
DE19618320A1 (de) 1996-04-30 1997-11-13 F&K Delvotec Bondtechnik Gmbh Vorrichtung zum "Ball"-Bonden
US6181431B1 (en) 1997-12-19 2001-01-30 Bernard Siu System and method for laser ultrasonic bond integrity evaluation
DE19812706A1 (de) 1998-03-23 1999-10-07 F&K Delvotec Bondtechnik Gmbh Verfahren und Vorrichtung zum "ball-bonden"
DE19814118A1 (de) 1998-03-30 1999-10-14 F&K Delvotec Bondtechnik Gmbh Vorrichtung zum Thermokompressionsbonden, und Thermokompressionsbonden
US6279810B1 (en) * 2000-02-23 2001-08-28 Asm Assembly Automation Ltd Piezoelectric sensor for measuring bonding parameters
DE10110048A1 (de) * 2001-03-02 2002-09-05 Bosch Gmbh Robert Verfahren zum Prüfen von durch Ultraschall-Drahtbonden hergestellten Verbindungen
KR20030066344A (ko) * 2002-02-01 2003-08-09 에섹 트레이딩 에스에이 와이어본더로 접합시에 최적의 접합 파라미터들을결정하기 위한 방법
EP1343201A1 (de) 2002-03-08 2003-09-10 F &amp; K Delvotec Bondtechnik GmbH "Verfahren und Anordnung zur Herstellung und Qualitätsprüfung einer Drahtbondverbindung"
TWI229397B (en) 2002-10-16 2005-03-11 Esec Trading Sa Method for determining optimum bond parameters when bonding with a wire bonder
CN1956816A (zh) 2004-06-01 2007-05-02 赫西和奈普斯有限责任公司 用于检验引线焊接连接的方法及装置
EP1625911B1 (de) 2004-08-11 2007-10-10 F&K Delvotec Bondtechnik GmbH Drahtbonder mit einer Kamera, einer Bildverarbeitungseinrichtung, Speichermittel und Vergleichermittel und Verfahren zum Betrieb eines solchen

Also Published As

Publication number Publication date
US20100025453A1 (en) 2010-02-04
EP1897648A1 (de) 2008-03-12
DE602006015192D1 (de) 2010-08-12
EP1897648B1 (de) 2010-06-30
US8020746B2 (en) 2011-09-20
WO2008028906A1 (en) 2008-03-13

Similar Documents

Publication Publication Date Title
ATE472387T1 (de) Verfahren und vorrichtung zur regelung der herstellung von drahtbondverbindungen
JP4926045B2 (ja) 超音波発振器の振動振幅の測定及び/又は調整のための方法及び超音波溶接装置
MY155362A (en) Method for quality control during ultrasonic bonding
MY158655A (en) Bonding device, ultrasonic transducer and bonding method
JPS63191927A (ja) ボンデイング工程中のボンデイングパラメータ監視装置
TW200626273A (en) Resonator, ultrasonic bonding head, and ultrasonic bonding apparatus
TW200614407A (en) Semiconductor device, method and apparatus for testing same, and method for manufacturing semiconductor device
TW200711012A (en) Semiconductor device bonding apparatus and method for bonding semiconductor device using the same
US10960488B2 (en) Operating method for an ultrasonic wire bonder with active and passive vibration damping
Althoff et al. Improving the bond quality of copper wire bonds using a friction model approach
TW570857B (en) Method for the calibration of a wire bonder
CN1306577C (zh) 当用引线接合器接合时确定最优接合参数的方法
TW200622240A (en) Apparatus and method for inspecting minute structure
ATE355927T1 (de) Verfahren und vorrichtung zur prüfung einer drahtbondverbindung
TWI266864B (en) Method of performing rupture event scanning and transducer-based sensor system
TW200739768A (en) Bonding apparatus and bonding method
Gaul et al. The ultrasonic wedge/wedge bonding process investigated using in situ real-time amplitudes from laser vibrometer and integrated force sensor
Han et al. Bondability window and power input for wire bonding
JP3897937B2 (ja) ボンディング方法
TW200506336A (en) Method for checking the quality of a wedge bond
ATE447258T1 (de) Akustische oberflächenwellenvorrichtung und verfahren zur herstellung derselben
ATE280031T1 (de) Verfahren zum vibrationsschweissen und werkzeug zu dessen durchführung
ATE440675T1 (de) Verfahren zum auftragen von klebstoff
Chiu et al. Sensors for ultrasonic wire bonding process control
CN202888136U (zh) 一种键合力控制装置

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties