KR880009876A - 실리콘 카바이드 휘스커를 제조하는 방법 - Google Patents
실리콘 카바이드 휘스커를 제조하는 방법 Download PDFInfo
- Publication number
 - KR880009876A KR880009876A KR1019880001953A KR880001953A KR880009876A KR 880009876 A KR880009876 A KR 880009876A KR 1019880001953 A KR1019880001953 A KR 1019880001953A KR 880001953 A KR880001953 A KR 880001953A KR 880009876 A KR880009876 A KR 880009876A
 - Authority
 - KR
 - South Korea
 - Prior art keywords
 - silicon
 - silica
 - sio
 - carbon black
 - mixture
 - Prior art date
 - Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
 - Ceased
 
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical class [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims 2
 - VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 11
 - 238000000034 method Methods 0.000 claims 8
 - 239000000377 silicon dioxide Substances 0.000 claims 4
 - 229910004298 SiO 2 Inorganic materials 0.000 claims 3
 - 239000006229 carbon black Substances 0.000 claims 3
 - 239000000203 mixture Substances 0.000 claims 3
 - IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 3
 - XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
 - 150000001875 compounds Chemical class 0.000 claims 2
 - 239000007789 gas Substances 0.000 claims 2
 - 238000010438 heat treatment Methods 0.000 claims 2
 - 238000004519 manufacturing process Methods 0.000 claims 2
 - 229910052757 nitrogen Inorganic materials 0.000 claims 2
 - 230000001590 oxidative effect Effects 0.000 claims 2
 - 239000002245 particle Substances 0.000 claims 2
 - 229910052710 silicon Inorganic materials 0.000 claims 2
 - 239000010703 silicon Substances 0.000 claims 2
 - ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
 - 229910000519 Ferrosilicon Inorganic materials 0.000 claims 1
 - 241000872198 Serjania polyphylla Species 0.000 claims 1
 - 239000003513 alkali Substances 0.000 claims 1
 - 239000011324 bead Substances 0.000 claims 1
 - 229910052796 boron Inorganic materials 0.000 claims 1
 - 238000006243 chemical reaction Methods 0.000 claims 1
 - 239000000428 dust Substances 0.000 claims 1
 - 239000004088 foaming agent Substances 0.000 claims 1
 - 230000004927 fusion Effects 0.000 claims 1
 - 239000011521 glass Substances 0.000 claims 1
 - 230000008595 infiltration Effects 0.000 claims 1
 - 238000001764 infiltration Methods 0.000 claims 1
 - QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
 - -1 or from an electric Inorganic materials 0.000 claims 1
 - 230000003647 oxidation Effects 0.000 claims 1
 - 238000007254 oxidation reaction Methods 0.000 claims 1
 - 230000035515 penetration Effects 0.000 claims 1
 - 239000012466 permeate Substances 0.000 claims 1
 - 239000000376 reactant Substances 0.000 claims 1
 - 239000004576 sand Substances 0.000 claims 1
 - 229910010271 silicon carbide Inorganic materials 0.000 claims 1
 - 229910052814 silicon oxide Inorganic materials 0.000 claims 1
 - 150000003388 sodium compounds Chemical class 0.000 claims 1
 - 230000003068 static effect Effects 0.000 claims 1
 - 229910052845 zircon Inorganic materials 0.000 claims 1
 - GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims 1
 - 239000007795 chemical reaction product Substances 0.000 description 1
 
Classifications
- 
        
- C—CHEMISTRY; METALLURGY
 - C03—GLASS; MINERAL OR SLAG WOOL
 - C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
 - C03C13/00—Fibre or filament compositions
 - C03C13/06—Mineral fibres, e.g. slag wool, mineral wool, rock wool
 
 - 
        
- C—CHEMISTRY; METALLURGY
 - C30—CRYSTAL GROWTH
 - C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
 - C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
 - C30B25/005—Growth of whiskers or needles
 
 - 
        
- C—CHEMISTRY; METALLURGY
 - C30—CRYSTAL GROWTH
 - C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
 - C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
 - C30B29/10—Inorganic compounds or compositions
 - C30B29/36—Carbides
 
 
Landscapes
- Chemical & Material Sciences (AREA)
 - Materials Engineering (AREA)
 - Organic Chemistry (AREA)
 - Engineering & Computer Science (AREA)
 - Crystallography & Structural Chemistry (AREA)
 - Metallurgy (AREA)
 - Chemical Kinetics & Catalysis (AREA)
 - General Chemical & Material Sciences (AREA)
 - Inorganic Chemistry (AREA)
 - Life Sciences & Earth Sciences (AREA)
 - General Life Sciences & Earth Sciences (AREA)
 - Geochemistry & Mineralogy (AREA)
 - Crystals, And After-Treatments Of Crystals (AREA)
 - Carbon And Carbon Compounds (AREA)
 
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| FR8702528A FR2611694B1 (fr) | 1987-02-23 | 1987-02-23 | Procede de preparation de trichites en carbure de silicium | 
| FR8702528 | 1987-02-23 | 
Publications (1)
| Publication Number | Publication Date | 
|---|---|
| KR880009876A true KR880009876A (ko) | 1988-10-05 | 
Family
ID=9348324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date | 
|---|---|---|---|
| KR1019880001953A Ceased KR880009876A (ko) | 1987-02-23 | 1988-02-23 | 실리콘 카바이드 휘스커를 제조하는 방법 | 
Country Status (9)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| KR101160140B1 (ko) * | 2009-12-30 | 2012-06-27 | 한국세라믹기술원 | 지르코늄디보라이드-실리콘카바이드 복합소재의 제조방법 | 
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| FR2649421A1 (fr) * | 1989-07-06 | 1991-01-11 | Atochem | Fibres monocristallines de carbure de silicium et leur procede de fabrication | 
| US5128115A (en) * | 1991-04-08 | 1992-07-07 | The United States Of America As Represented By The United States Department Of Energy | Manufacture of silicon carbide using solar energy | 
| US5221526A (en) * | 1991-05-24 | 1993-06-22 | Advanced Industrial Materials | Production of silicon carbide whiskers using a seeding component to determine shape and size of whiskers | 
| US5324494A (en) * | 1993-01-21 | 1994-06-28 | Midwest Research Institute | Method for silicon carbide production by reacting silica with hydrocarbon gas | 
| US5326732A (en) * | 1993-08-26 | 1994-07-05 | Japan As Represented By Director General Of Agency Of Industrial Science And Technology | Carbon-silicon carbide composite material and method for the preparation thereof | 
| US6190634B1 (en) | 1995-06-07 | 2001-02-20 | President And Fellows Of Harvard College | Carbide nanomaterials | 
| US6251353B1 (en) * | 1996-08-26 | 2001-06-26 | Bridgestone Corporation | Production method of silicon carbide particles | 
| US5997832A (en) * | 1997-03-07 | 1999-12-07 | President And Fellows Of Harvard College | Preparation of carbide nanorods | 
| CN114959905B (zh) * | 2022-03-07 | 2024-11-22 | 西北工业大学 | 一种无催化剂合成碳化钽纳米晶须及制备方法 | 
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| JPS5945639B2 (ja) * | 1982-01-18 | 1984-11-07 | 東海カーボン株式会社 | SiCホイスカ−の製造方法 | 
| JPS6044280B2 (ja) * | 1982-02-25 | 1985-10-02 | 東海カ−ボン株式会社 | 炭化けい素ウイスカ−の製造方法 | 
| JPS5945640B2 (ja) * | 1982-03-31 | 1984-11-07 | 東海カ−ボン株式会社 | SiCウイスカ−の製造方法 | 
| US4499569A (en) * | 1982-09-07 | 1985-02-12 | Discovision Associates | Writing beam focus monitor | 
| JPS5945640A (ja) * | 1982-09-09 | 1984-03-14 | Hitachi Ltd | レンズ姿勢調整装置 | 
| JPS59213700A (ja) * | 1983-05-18 | 1984-12-03 | Tokai Carbon Co Ltd | SiCウイスカ−の製造方法 | 
| GB2162504B (en) * | 1984-07-17 | 1988-05-18 | Nippon Light Metal Co | Process for continuous reaction furnace for production of b-type silicon carbide whiskers | 
| JPS61127700A (ja) * | 1984-11-21 | 1986-06-14 | Tokai Carbon Co Ltd | SiCウイスカ−の製造方法 | 
| JPS623098A (ja) * | 1985-06-21 | 1987-01-09 | Kobe Steel Ltd | 炭化ケイ素ウイスカ−の製造方法 | 
- 
        1987
        
- 1987-02-23 FR FR8702528A patent/FR2611694B1/fr not_active Expired
 
 - 
        1988
        
- 1988-02-18 ES ES198888420055T patent/ES2037266T3/es not_active Expired - Lifetime
 - 1988-02-18 AT AT88420055T patent/ATE75787T1/de not_active IP Right Cessation
 - 1988-02-18 EP EP88420055A patent/EP0280630B1/fr not_active Expired - Lifetime
 - 1988-02-18 DE DE8888420055T patent/DE3870663D1/de not_active Expired - Lifetime
 - 1988-02-19 US US07/157,619 patent/US4904622A/en not_active Expired - Fee Related
 - 1988-02-23 JP JP63040552A patent/JPH02141499A/ja active Granted
 - 1988-02-23 KR KR1019880001953A patent/KR880009876A/ko not_active Ceased
 
 - 
        1992
        
- 1992-05-07 GR GR910402221T patent/GR3004504T3/el unknown
 
 
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| KR101160140B1 (ko) * | 2009-12-30 | 2012-06-27 | 한국세라믹기술원 | 지르코늄디보라이드-실리콘카바이드 복합소재의 제조방법 | 
Also Published As
| Publication number | Publication date | 
|---|---|
| US4904622A (en) | 1990-02-27 | 
| GR3004504T3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-04-28 | 
| DE3870663D1 (de) | 1992-06-11 | 
| EP0280630A1 (fr) | 1988-08-31 | 
| EP0280630B1 (fr) | 1992-05-06 | 
| JPH0476357B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-12-03 | 
| FR2611694B1 (fr) | 1989-05-19 | 
| ATE75787T1 (de) | 1992-05-15 | 
| JPH02141499A (ja) | 1990-05-30 | 
| ES2037266T3 (es) | 1993-06-16 | 
| FR2611694A1 (fr) | 1988-09-09 | 
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Legal Events
| Date | Code | Title | Description | 
|---|---|---|---|
| PA0109 | Patent application | 
             Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19880223  | 
        |
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination | 
             Patent event code: PA02012R01D Patent event date: 19930208 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 19880223 Comment text: Patent Application  | 
        |
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection | 
             Comment text: Notification of reason for refusal Patent event date: 19950615 Patent event code: PE09021S01D  | 
        |
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent | 
             Patent event date: 19950913 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 19950615 Comment text: Notification of reason for refusal Patent event code: PE06011S01I  |