ATE75787T1 - Verfahren zur herstellung von silizium-carbidwhiskern. - Google Patents

Verfahren zur herstellung von silizium-carbidwhiskern.

Info

Publication number
ATE75787T1
ATE75787T1 AT88420055T AT88420055T ATE75787T1 AT E75787 T1 ATE75787 T1 AT E75787T1 AT 88420055 T AT88420055 T AT 88420055T AT 88420055 T AT88420055 T AT 88420055T AT E75787 T1 ATE75787 T1 AT E75787T1
Authority
AT
Austria
Prior art keywords
carried out
reaction
silicon carbide
carbon
silicon
Prior art date
Application number
AT88420055T
Other languages
English (en)
Inventor
Dominique Dubots
Francis Dubrous
Original Assignee
Pechiney Electrometallurgie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pechiney Electrometallurgie filed Critical Pechiney Electrometallurgie
Application granted granted Critical
Publication of ATE75787T1 publication Critical patent/ATE75787T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C13/00Fibre or filament compositions
    • C03C13/06Mineral fibres, e.g. slag wool, mineral wool, rock wool
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005Growth of whiskers or needles
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/36Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
AT88420055T 1987-02-23 1988-02-18 Verfahren zur herstellung von silizium-carbidwhiskern. ATE75787T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8702528A FR2611694B1 (fr) 1987-02-23 1987-02-23 Procede de preparation de trichites en carbure de silicium
EP88420055A EP0280630B1 (de) 1987-02-23 1988-02-18 Verfahren zur Herstellung von Silizium-Carbid-Whiskern

Publications (1)

Publication Number Publication Date
ATE75787T1 true ATE75787T1 (de) 1992-05-15

Family

ID=9348324

Family Applications (1)

Application Number Title Priority Date Filing Date
AT88420055T ATE75787T1 (de) 1987-02-23 1988-02-18 Verfahren zur herstellung von silizium-carbidwhiskern.

Country Status (9)

Country Link
US (1) US4904622A (de)
EP (1) EP0280630B1 (de)
JP (1) JPH02141499A (de)
KR (1) KR880009876A (de)
AT (1) ATE75787T1 (de)
DE (1) DE3870663D1 (de)
ES (1) ES2037266T3 (de)
FR (1) FR2611694B1 (de)
GR (1) GR3004504T3 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2649421A1 (fr) * 1989-07-06 1991-01-11 Atochem Fibres monocristallines de carbure de silicium et leur procede de fabrication
US5128115A (en) * 1991-04-08 1992-07-07 The United States Of America As Represented By The United States Department Of Energy Manufacture of silicon carbide using solar energy
US5221526A (en) * 1991-05-24 1993-06-22 Advanced Industrial Materials Production of silicon carbide whiskers using a seeding component to determine shape and size of whiskers
US5324494A (en) * 1993-01-21 1994-06-28 Midwest Research Institute Method for silicon carbide production by reacting silica with hydrocarbon gas
US5326732A (en) * 1993-08-26 1994-07-05 Japan As Represented By Director General Of Agency Of Industrial Science And Technology Carbon-silicon carbide composite material and method for the preparation thereof
US6190634B1 (en) 1995-06-07 2001-02-20 President And Fellows Of Harvard College Carbide nanomaterials
US6251353B1 (en) * 1996-08-26 2001-06-26 Bridgestone Corporation Production method of silicon carbide particles
US5997832A (en) * 1997-03-07 1999-12-07 President And Fellows Of Harvard College Preparation of carbide nanorods
KR101160140B1 (ko) * 2009-12-30 2012-06-27 한국세라믹기술원 지르코늄디보라이드-실리콘카바이드 복합소재의 제조방법
CN114959905A (zh) * 2022-03-07 2022-08-30 西北工业大学 一种无催化剂合成碳化钽纳米晶须及制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5945639B2 (ja) * 1982-01-18 1984-11-07 東海カーボン株式会社 SiCホイスカ−の製造方法
JPS6044280B2 (ja) * 1982-02-25 1985-10-02 東海カ−ボン株式会社 炭化けい素ウイスカ−の製造方法
JPS5945640B2 (ja) * 1982-03-31 1984-11-07 東海カ−ボン株式会社 SiCウイスカ−の製造方法
US4499569A (en) * 1982-09-07 1985-02-12 Discovision Associates Writing beam focus monitor
JPS5945640A (ja) * 1982-09-09 1984-03-14 Hitachi Ltd レンズ姿勢調整装置
JPS59213700A (ja) * 1983-05-18 1984-12-03 Tokai Carbon Co Ltd SiCウイスカ−の製造方法
GB2162504B (en) * 1984-07-17 1988-05-18 Nippon Light Metal Co Process for continuous reaction furnace for production of b-type silicon carbide whiskers
JPS61127700A (ja) * 1984-11-21 1986-06-14 Tokai Carbon Co Ltd SiCウイスカ−の製造方法
JPS623098A (ja) * 1985-06-21 1987-01-09 Kobe Steel Ltd 炭化ケイ素ウイスカ−の製造方法

Also Published As

Publication number Publication date
DE3870663D1 (de) 1992-06-11
FR2611694A1 (fr) 1988-09-09
KR880009876A (ko) 1988-10-05
EP0280630B1 (de) 1992-05-06
US4904622A (en) 1990-02-27
ES2037266T3 (es) 1993-06-16
JPH02141499A (ja) 1990-05-30
JPH0476357B2 (de) 1992-12-03
FR2611694B1 (fr) 1989-05-19
EP0280630A1 (de) 1988-08-31
GR3004504T3 (de) 1993-04-28

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee