GB1484164A - Production of silicon carbide - Google Patents
Production of silicon carbideInfo
- Publication number
- GB1484164A GB1484164A GB48564/74A GB4856474A GB1484164A GB 1484164 A GB1484164 A GB 1484164A GB 48564/74 A GB48564/74 A GB 48564/74A GB 4856474 A GB4856474 A GB 4856474A GB 1484164 A GB1484164 A GB 1484164A
- Authority
- GB
- United Kingdom
- Prior art keywords
- carbon
- silicon
- silicon carbide
- silica
- nov
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
- C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
- C09C1/28—Compounds of silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C01B32/97—Preparation from SiO or SiO2
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C01B32/984—Preparation from elemental silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
- Pigments, Carbon Blacks, Or Wood Stains (AREA)
Abstract
1484164 Silicon carbide E I DU PONT DE NEMOURS & CO 8 Nov 1974 [8 Nov 1973] 48564/74 Heading C1A Silicon carbide is produced by heating a mixture of carbon and silica, both in particular form, in a mole ratio of carbon to silica of from 2 : 1 to 6 : 1 at a temperature of from 1350‹ to 1750‹ C. in the presence of particulate elemental silicon in an amount of from 3À5 to 22% by weight based on the weight of carbon, silica and silicon used. The preferred temperature range is from 1400‹ to 1600‹ C. If necessary the product is subsequently heated in air at at least 400‹ C. to oxidize any residual carbon; excess silicon, if any is removed by an acid leaching step using a mixture of hydrofluoric and nitric acids and residual acid together with any carbon liberated by the leaching step are removed by a further heating step at a temperature of at least 400‹ C.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US41412873A | 1973-11-08 | 1973-11-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1484164A true GB1484164A (en) | 1977-09-01 |
Family
ID=23640069
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB48564/74A Expired GB1484164A (en) | 1973-11-08 | 1974-11-08 | Production of silicon carbide |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS5075600A (en) |
DE (1) | DE2452799A1 (en) |
GB (1) | GB1484164A (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5850929B2 (en) | 1978-03-10 | 1983-11-14 | 株式会社東芝 | Method for manufacturing silicon carbide powder |
DE2910059C2 (en) * | 1978-03-15 | 1982-05-19 | Suzuki, Hiroshige, Tokyo | Process for the production of finely divided silicon carbide and its use for the production of high-density sintered bodies |
US4217335A (en) * | 1979-06-14 | 1980-08-12 | Nippon Crucible Co., Ltd. | Process for producing β-silicon carbide fine powder |
JPS5684310A (en) * | 1979-12-14 | 1981-07-09 | Hiroshige Suzuki | Manufacture of betaatype silicon carbide |
JPS5891017A (en) * | 1981-11-26 | 1983-05-30 | Denki Kagaku Kogyo Kk | Purifying method for alpha-type silicon nitride |
JPS5923831A (en) * | 1982-07-28 | 1984-02-07 | Tokai Carbon Co Ltd | Production of composite material reinforced with sic whisker |
JPS60258918A (en) * | 1985-03-20 | 1985-12-20 | Toshiba Ceramics Co Ltd | Manufacture of sic-si heat equalizing tube for manufacturing gas impermeable semiconductor |
JPH0354111A (en) * | 1989-07-19 | 1991-03-08 | Kansai Coke & Chem Co Ltd | Production of sic fine powder |
JP6270414B2 (en) * | 2013-10-30 | 2018-01-31 | 太平洋セメント株式会社 | Method for producing silicon carbide |
JP6297812B2 (en) * | 2013-10-30 | 2018-03-20 | 太平洋セメント株式会社 | Method for producing silicon carbide |
-
1974
- 1974-11-06 JP JP49127246A patent/JPS5075600A/ja active Pending
- 1974-11-07 DE DE19742452799 patent/DE2452799A1/en active Pending
- 1974-11-08 GB GB48564/74A patent/GB1484164A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5075600A (en) | 1975-06-20 |
DE2452799A1 (en) | 1975-05-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |