KR880005660A - 다층 반도체의 선택적 혼합 처리방법 - Google Patents

다층 반도체의 선택적 혼합 처리방법 Download PDF

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Publication number
KR880005660A
KR880005660A KR870011156A KR870011156A KR880005660A KR 880005660 A KR880005660 A KR 880005660A KR 870011156 A KR870011156 A KR 870011156A KR 870011156 A KR870011156 A KR 870011156A KR 880005660 A KR880005660 A KR 880005660A
Authority
KR
South Korea
Prior art keywords
multilayer semiconductor
semiconductor structure
energy source
laser beam
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR870011156A
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English (en)
Korean (ko)
Inventor
던컨 랄스톤 죤
루크 모렛티 안소니
쿠머 재인 라빈더
Original Assignee
랄프 스 메드허스트
아모코 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 랄프 스 메드허스트, 아모코 코포레이션 filed Critical 랄프 스 메드허스트
Publication of KR880005660A publication Critical patent/KR880005660A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3824—Intermixing, interdiffusion or disordering of III-V heterostructures, e.g. IILD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/174—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being Group III-V material
KR870011156A 1986-10-09 1987-10-06 다층 반도체의 선택적 혼합 처리방법 Withdrawn KR880005660A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US916818 1986-10-09
US06/916,818 US4731338A (en) 1986-10-09 1986-10-09 Method for selective intermixing of layered structures composed of thin solid films

Publications (1)

Publication Number Publication Date
KR880005660A true KR880005660A (ko) 1988-06-29

Family

ID=25437882

Family Applications (1)

Application Number Title Priority Date Filing Date
KR870011156A Withdrawn KR880005660A (ko) 1986-10-09 1987-10-06 다층 반도체의 선택적 혼합 처리방법

Country Status (11)

Country Link
US (1) US4731338A (https=)
EP (1) EP0264222B1 (https=)
JP (1) JPS63119591A (https=)
KR (1) KR880005660A (https=)
CN (1) CN1012405B (https=)
AT (1) ATE102398T1 (https=)
AU (1) AU592019B2 (https=)
CA (1) CA1277439C (https=)
DE (1) DE3789187T2 (https=)
IE (1) IE872671L (https=)
IN (1) IN171245B (https=)

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JP2544378B2 (ja) * 1987-03-25 1996-10-16 株式会社日立製作所 光半導体装置
GB2206233B (en) * 1987-06-23 1990-09-05 British Gas Plc Miniature thermoelectric converters
US4817102A (en) * 1988-04-18 1989-03-28 Maurer Larry D Acousto-electromagnetic hologistic resonant system
US5107316A (en) * 1989-12-28 1992-04-21 Siemens Corporate Research, Inc. Catoptrical opto-electronic gas sensor
US5191784A (en) * 1989-12-28 1993-03-09 Siemens Corporate Research, Inc. Opto-electronic gas sensor
US5081633A (en) * 1990-05-31 1992-01-14 Applied Solar Energy Corporation Semiconductor laser diode
US7273981B2 (en) * 2001-02-09 2007-09-25 Bsst, Llc. Thermoelectric power generation systems
US6959555B2 (en) * 2001-02-09 2005-11-01 Bsst Llc High power density thermoelectric systems
US6672076B2 (en) * 2001-02-09 2004-01-06 Bsst Llc Efficiency thermoelectrics utilizing convective heat flow
US7942010B2 (en) 2001-02-09 2011-05-17 Bsst, Llc Thermoelectric power generating systems utilizing segmented thermoelectric elements
US6539725B2 (en) * 2001-02-09 2003-04-01 Bsst Llc Efficiency thermoelectrics utilizing thermal isolation
US7231772B2 (en) * 2001-02-09 2007-06-19 Bsst Llc. Compact, high-efficiency thermoelectric systems
US7946120B2 (en) 2001-02-09 2011-05-24 Bsst, Llc High capacity thermoelectric temperature control system
US8490412B2 (en) 2001-08-07 2013-07-23 Bsst, Llc Thermoelectric personal environment appliance
JP2004537708A (ja) * 2001-08-07 2004-12-16 ビーエスエスティー エルエルシー 熱電気式個人用環境調整機器
US6812395B2 (en) * 2001-10-24 2004-11-02 Bsst Llc Thermoelectric heterostructure assemblies element
SG99970A1 (en) * 2002-04-05 2003-11-27 Inst Materials Research & Eng Method for forming a modified semiconductor having a plurality of band gaps
US7847179B2 (en) * 2005-06-06 2010-12-07 Board Of Trustees Of Michigan State University Thermoelectric compositions and process
US7608777B2 (en) * 2005-06-28 2009-10-27 Bsst, Llc Thermoelectric power generator with intermediate loop
US7952015B2 (en) 2006-03-30 2011-05-31 Board Of Trustees Of Michigan State University Pb-Te-compounds doped with tin-antimony-tellurides for thermoelectric generators or peltier arrangements
WO2009094571A2 (en) * 2008-01-25 2009-07-30 The Ohio State University Research Foundation Ternary thermoelectric materials and methods of fabrication
CN102105757A (zh) 2008-06-03 2011-06-22 Bsst有限责任公司 热电热泵
US20100024859A1 (en) * 2008-07-29 2010-02-04 Bsst, Llc. Thermoelectric power generator for variable thermal power source
US9178128B2 (en) 2011-11-17 2015-11-03 Gentherm Incorporated Thermoelectric devices with interface materials and methods of manufacturing the same
US11075331B2 (en) 2018-07-30 2021-07-27 Gentherm Incorporated Thermoelectric device having circuitry with structural rigidity
EP3745471A1 (en) * 2019-05-31 2020-12-02 OSRAM Opto Semiconductors GmbH Method of laser treatment of a semiconductor wafer comprising algainp-leds to increase their light generating efficiency
DE102021104685A1 (de) 2021-02-26 2022-09-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung eines optoelektronischen halbleiterbauelements und optoelektronisches halbleiterbauelement

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4318752A (en) * 1980-05-16 1982-03-09 Bell Telephone Laboratories, Incorporated Heterojunction semiconductor laser fabrication utilizing laser radiation
FR2504727A1 (fr) * 1981-04-28 1982-10-29 Commissariat Energie Atomique Dispositif de traitement d'un echantillon par faisceau electronique impulsionnel
DE3276979D1 (en) * 1981-05-06 1987-09-17 Univ Illinois Method of forming wide bandgap region within multilayer semiconductors
US4511408A (en) * 1982-04-22 1985-04-16 The Board Of Trustees Of The University Of Illinois Semiconductor device fabrication with disordering elements introduced into active region
JPS58112326A (ja) * 1981-12-26 1983-07-04 Fujitsu Ltd 複合ビ−ムアニ−ル方法
US4639275A (en) * 1982-04-22 1987-01-27 The Board Of Trustees Of The University Of Illinois Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor
AU1859783A (en) * 1983-05-23 1984-11-29 Katz, B.B. Annealing implanted semiconductors by lasers
US4585491A (en) * 1983-09-02 1986-04-29 Xerox Corporation Wavelength tuning of quantum well lasers by thermal annealing
US4637122A (en) * 1983-09-19 1987-01-20 Honeywell Inc. Integrated quantum well lasers for wavelength division multiplexing
JPH06105718B2 (ja) * 1984-06-05 1994-12-21 日本電気株式会社 半導体装置及びその製造方法
JPS60262417A (ja) * 1984-06-08 1985-12-25 Nec Corp 半導体結晶の製造方法
US4578128A (en) * 1984-12-03 1986-03-25 Ncr Corporation Process for forming retrograde dopant distributions utilizing simultaneous outdiffusion of dopants
JPS61191089A (ja) * 1985-02-20 1986-08-25 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US4654090A (en) * 1985-09-13 1987-03-31 Xerox Corporation Selective disordering of well structures by laser annealing
JPS62257782A (ja) * 1986-05-01 1987-11-10 Mitsubishi Electric Corp 半導体の加工方法

Also Published As

Publication number Publication date
DE3789187T2 (de) 1994-10-06
IN171245B (https=) 1992-08-22
AU7946687A (en) 1988-04-14
EP0264222A2 (en) 1988-04-20
CA1277439C (en) 1990-12-04
IE872671L (en) 1988-04-09
EP0264222A3 (en) 1989-08-16
JPS63119591A (ja) 1988-05-24
CN1012405B (zh) 1991-04-17
DE3789187D1 (de) 1994-04-07
CN87106894A (zh) 1988-04-20
US4731338A (en) 1988-03-15
EP0264222B1 (en) 1994-03-02
ATE102398T1 (de) 1994-03-15
AU592019B2 (en) 1989-12-21

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