DE3689073T2 - Selektives niederschlagsverfahren. - Google Patents
Selektives niederschlagsverfahren.Info
- Publication number
- DE3689073T2 DE3689073T2 DE87900433T DE3689073T DE3689073T2 DE 3689073 T2 DE3689073 T2 DE 3689073T2 DE 87900433 T DE87900433 T DE 87900433T DE 3689073 T DE3689073 T DE 3689073T DE 3689073 T2 DE3689073 T2 DE 3689073T2
- Authority
- DE
- Germany
- Prior art keywords
- deposition method
- selective deposition
- selective
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000151 deposition Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Toxicology (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- High Energy & Nuclear Physics (AREA)
- Mechanical Engineering (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US80472785A | 1985-12-05 | 1985-12-05 | |
PCT/US1986/002568 WO1987003741A1 (en) | 1985-12-05 | 1986-11-28 | Selective deposition process |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3689073D1 DE3689073D1 (de) | 1993-10-28 |
DE3689073T2 true DE3689073T2 (de) | 1994-04-21 |
Family
ID=25189680
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE87900433T Expired - Fee Related DE3689073T2 (de) | 1985-12-05 | 1986-11-28 | Selektives niederschlagsverfahren. |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0248883B1 (de) |
JP (1) | JPS63501882A (de) |
DE (1) | DE3689073T2 (de) |
WO (1) | WO1987003741A1 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5021363A (en) * | 1989-09-07 | 1991-06-04 | Laboratories Incorporated | Method of selectively producing conductive members on a semiconductor surface |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4543270A (en) * | 1984-06-20 | 1985-09-24 | Gould Inc. | Method for depositing a micron-size metallic film on a transparent substrate utilizing a visible laser |
JPH0642456B2 (ja) * | 1984-11-21 | 1994-06-01 | 株式会社日立製作所 | 表面光処理方法 |
US4699801A (en) * | 1985-02-28 | 1987-10-13 | Kabuskiki Kaisha Toshiba | Semiconductor device |
JPS61220417A (ja) * | 1985-03-27 | 1986-09-30 | Hitachi Ltd | 半導体装置の製造方法 |
-
1986
- 1986-11-28 DE DE87900433T patent/DE3689073T2/de not_active Expired - Fee Related
- 1986-11-28 JP JP50019687A patent/JPS63501882A/ja active Pending
- 1986-11-28 EP EP19870900433 patent/EP0248883B1/de not_active Expired - Lifetime
- 1986-11-28 WO PCT/US1986/002568 patent/WO1987003741A1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
EP0248883B1 (de) | 1993-09-22 |
WO1987003741A1 (en) | 1987-06-18 |
EP0248883A1 (de) | 1987-12-16 |
DE3689073D1 (de) | 1993-10-28 |
JPS63501882A (ja) | 1988-07-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: AT&T GLOBAL INFORMATION SOLUTIONS INTERNATIONAL IN |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: AT&T GLOBAL INFORMATION SOLUTIONS INTERNATIONAL IN |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: NCR INTERNATIONAL, INC. (N.D.GES.D.STAATES DELAWAR |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: NCR INTERNATIONAL, INC. (N.D.GES.D.STAATES DELAWAR |
|
8328 | Change in the person/name/address of the agent |
Free format text: V. BEZOLD & SOZIEN, 80799 MUENCHEN |
|
8339 | Ceased/non-payment of the annual fee | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: HYNIX SEMICONDUCTOR INC., ICHON, KYONGGI, KR Owner name: NCR INTERNATIONAL, INC. (N.D.GES.D.STAATES DEL, US |