Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
  • H10P95/90—Thermal treatments, e.g. annealing or sintering
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
  • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
  • H10P14/3824—Intermixing, interdiffusion or disordering of III-V heterostructures, e.g. IILD
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
  • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
  • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
  • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
  • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
  • H10P32/174—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being Group III-V material

Landscapes

• Recrystallisation Techniques (AREA)
• Magnetic Heads (AREA)
• Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
• Coils Or Transformers For Communication (AREA)
• Sampling And Sample Adjustment (AREA)
• Physical Or Chemical Processes And Apparatus (AREA)
• Superconductor Devices And Manufacturing Methods Thereof (AREA)
• Superconductors And Manufacturing Methods Therefor (AREA)
• Semiconductor Lasers (AREA)
• Junction Field-Effect Transistors (AREA)
• Photovoltaic Devices (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=25437882

Family Applications (1)

Country Status (11)

Families Citing this family (27)

Family Cites Families (15)

• 1986
  • 1986-10-09 US US06/916,818 patent/US4731338A/en not_active Expired - Lifetime
• 1987
  • 1987-10-06 IE IE872671A patent/IE872671L/xx unknown
  • 1987-10-06 IN IN875/DEL/87A patent/IN171245B/en unknown
  • 1987-10-06 KR KR870011156A patent/KR880005660A/ko not_active Withdrawn
  • 1987-10-06 CA CA000548660A patent/CA1277439C/en not_active Expired - Fee Related
  • 1987-10-07 DE DE3789187T patent/DE3789187T2/de not_active Expired - Fee Related
  • 1987-10-07 AT AT87308868T patent/ATE102398T1/de not_active IP Right Cessation
  • 1987-10-07 EP EP87308868A patent/EP0264222B1/en not_active Expired - Lifetime
  • 1987-10-08 AU AU79466/87A patent/AU592019B2/en not_active Ceased
  • 1987-10-09 JP JP62256117A patent/JPS63119591A/ja active Pending
  • 1987-10-09 CN CN87106894A patent/CN1012405B/zh not_active Expired

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