KR880002258A - 기판의 린스처리방법 - Google Patents

기판의 린스처리방법 Download PDF

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Publication number
KR880002258A
KR880002258A KR1019870007723A KR870007723A KR880002258A KR 880002258 A KR880002258 A KR 880002258A KR 1019870007723 A KR1019870007723 A KR 1019870007723A KR 870007723 A KR870007723 A KR 870007723A KR 880002258 A KR880002258 A KR 880002258A
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KR
South Korea
Prior art keywords
ether
substrate
aliphatic amine
rinse
rinsing
Prior art date
Application number
KR1019870007723A
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English (en)
Other versions
KR900005345B1 (ko
Inventor
마사가즈 고바야시
신고 아사우미
하쯔유끼 다나까
Original Assignee
이또오 다께오
도오교오 오오까 고오교오 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 이또오 다께오, 도오교오 오오까 고오교오 가부시기가이샤 filed Critical 이또오 다께오
Publication of KR880002258A publication Critical patent/KR880002258A/ko
Application granted granted Critical
Publication of KR900005345B1 publication Critical patent/KR900005345B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Abstract

내용 없음

Description

기판의 린스처리방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (6)

  1. 포토레지스트층패턴을 박리제로 제거한 후, 기판을 린스용제를 사용하여 린스처리하는데 있어서, 일반식
    (식중, R1은 탄소수 1-4인 알킬기, R2는 수소원자 또는 메틸기, n은 2 또는 3을 타나낸다)으로 표시되는 에테르화합물을 주성분으로 하여 구성되는 용제를 사용하여 린스처리하는 것을 특징으로 하는 기판의 린스처리방법.
  2. 제1항에 있어서, 상기 에테르화합물이, 디에틸렌글리콜 모노메틸에테르, 디에틸렌 글리콜 모노에틸에테르, 디에틸렌글리콜 모노부틸에테르, 디프로필렌글리콜 모노메틸에테르, 디프로필렌글리콜 모노에틸에테르, 트리에틸렌글리콜 모노메틸에테르, 트리에틸렌글리콜 모노에틸에테르 및 트리프로필렌글리콜 모노메틸에테르로 구성되는 그룹으로부터 선택되는 에테르 화합물인 것을 특징으로 하는 기판의 린스처리방법.
  3. 제1항에 있어서, 상기 린스용제가, 일반식NR3 3(식중 각각의 R3는 다른 것으로부터 독립하여, 수소원자, 알킬기 또는 히드록시알킬기를 나타내며, 세개의 R3기중 적어도 하나는 히드록시알킬기이다)으로 표시되는 지방족아민화합물과 에테르화합물의 혼합물인 것을 특징으로 하는 기판의 린스처리방법.
  4. 제3항에 있어서, 상기 지방족아민화합물이, 모노에탄올아민, 부틸모노에탄올아민, 에틸디에탄올아민 및 트리이소프로판올 아민으로 구성되는 그룹으로부터 선택되는 지방족아민화합물인 것을 특징으로 하는 기판의 린스처리방법.
  5. 제3항에 있어서, 포토레지스트층패턴이 네가티브형 포토레지스트 조성물로 형성되는 경우에는 린스용제중의 지방족아민화합물의 양이 15중량%를 초과하지 않는 것을 특징으로 하는 기판의 린스처리방법.
  6. 제3항에 있어서, 포토레지스트층패턴이 포지티브형 포토레지스트 조성물로 형성되는 경우에는, 린스용제중의 지방족아민화합물의 양이 50중량%를 초과하지 않는 것을 특징으로 하는 기판의 린스처리방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870007723A 1986-07-18 1987-07-16 기판의 린스처리방법 KR900005345B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP167898 1986-07-18
JP61167898A JPH0721638B2 (ja) 1986-07-18 1986-07-18 基板の処理方法
JP61-167898 1986-07-18

Publications (2)

Publication Number Publication Date
KR880002258A true KR880002258A (ko) 1988-04-30
KR900005345B1 KR900005345B1 (ko) 1990-07-27

Family

ID=15858100

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870007723A KR900005345B1 (ko) 1986-07-18 1987-07-16 기판의 린스처리방법

Country Status (5)

Country Link
US (1) US4824762A (ko)
JP (1) JPH0721638B2 (ko)
KR (1) KR900005345B1 (ko)
DE (1) DE3723402A1 (ko)
GB (1) GB2193346B (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100353023B1 (ko) * 2000-03-15 2002-09-16 최희식 스크린 마스크 세정용 조성물
KR100469558B1 (ko) * 2002-04-03 2005-02-02 동우 화인켐 주식회사 알코올과 에테르를 포함하는 새로운 에지 비드 제거용세정 용액 및 이를 이용한 세정 방법
KR20190109467A (ko) * 2017-01-20 2019-09-25 에보니크 룀 게엠베하 긴 저장 수명을 갖는 글리세롤 (메트)아크릴레이트 카르복실산 에스테르

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JP2559614B2 (ja) * 1988-03-01 1996-12-04 宇部興産株式会社 ポリイミドパターン層の形成法およびその方法に使用するリンス液
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JPH06108097A (ja) * 1992-08-07 1994-04-19 Dr Ok Wack Chem Gmbh 洗浄剤
DE4325133A1 (de) * 1993-07-27 1995-02-02 Wack O K Chemie Gmbh Verfahren zum Reinigen von Gegenständen
US5545353A (en) * 1995-05-08 1996-08-13 Ocg Microelectronic Materials, Inc. Non-corrosive photoresist stripper composition
US5472830A (en) * 1994-04-18 1995-12-05 Ocg Microelectronic Materials, Inc. Non-corrosion photoresist stripping composition
US5597678A (en) * 1994-04-18 1997-01-28 Ocg Microelectronic Materials, Inc. Non-corrosive photoresist stripper composition
MY119363A (en) * 1994-10-13 2005-05-31 Kao Corp Anti-corrosive draining agent and rinsing process
US5561105A (en) * 1995-05-08 1996-10-01 Ocg Microelectronic Materials, Inc. Chelating reagent containing photoresist stripper composition
US5507978A (en) * 1995-05-08 1996-04-16 Ocg Microelectronic Materials, Inc. Novolak containing photoresist stripper composition
JP3448838B2 (ja) * 1995-06-30 2003-09-22 富士通株式会社 磁気抵抗効果型ヘッドの製造方法
US5612304A (en) * 1995-07-07 1997-03-18 Olin Microelectronic Chemicals, Inc. Redox reagent-containing post-etch residue cleaning composition
JP3755776B2 (ja) * 1996-07-11 2006-03-15 東京応化工業株式会社 リソグラフィー用リンス液組成物及びそれを用いた基板の処理方法
US5780406A (en) * 1996-09-06 1998-07-14 Honda; Kenji Non-corrosive cleaning composition for removing plasma etching residues
US5817610A (en) * 1996-09-06 1998-10-06 Olin Microelectronic Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US6030932A (en) * 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
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US5977041A (en) * 1997-09-23 1999-11-02 Olin Microelectronic Chemicals Aqueous rinsing composition
US6033993A (en) * 1997-09-23 2000-03-07 Olin Microelectronic Chemicals, Inc. Process for removing residues from a semiconductor substrate
US6107202A (en) * 1998-09-14 2000-08-22 Taiwan Semiconductor Manufacturing Company Passivation photoresist stripping method to eliminate photoresist extrusion after alloy
US6558432B2 (en) 1999-10-15 2003-05-06 R. R. Street & Co., Inc. Cleaning system utilizing an organic cleaning solvent and a pressurized fluid solvent
US6755871B2 (en) * 1999-10-15 2004-06-29 R.R. Street & Co. Inc. Cleaning system utilizing an organic cleaning solvent and a pressurized fluid solvent
US6355072B1 (en) 1999-10-15 2002-03-12 R.R. Street & Co. Inc. Cleaning system utilizing an organic cleaning solvent and a pressurized fluid solvent
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KR100670919B1 (ko) * 2005-01-12 2007-01-19 삼성전자주식회사 저유전율막 제거 방법 및 이를 이용한 웨이퍼 재생 방법
JP4988165B2 (ja) * 2005-03-11 2012-08-01 関東化学株式会社 フォトレジスト剥離液組成物及びフォトレジストの剥離方法
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100353023B1 (ko) * 2000-03-15 2002-09-16 최희식 스크린 마스크 세정용 조성물
KR100469558B1 (ko) * 2002-04-03 2005-02-02 동우 화인켐 주식회사 알코올과 에테르를 포함하는 새로운 에지 비드 제거용세정 용액 및 이를 이용한 세정 방법
KR20190109467A (ko) * 2017-01-20 2019-09-25 에보니크 룀 게엠베하 긴 저장 수명을 갖는 글리세롤 (메트)아크릴레이트 카르복실산 에스테르

Also Published As

Publication number Publication date
GB2193346A (en) 1988-02-03
KR900005345B1 (ko) 1990-07-27
DE3723402C2 (ko) 1990-04-12
GB2193346B (en) 1990-04-04
US4824762A (en) 1989-04-25
DE3723402A1 (de) 1988-01-28
GB8715251D0 (en) 1987-08-05
JPS6325657A (ja) 1988-02-03
JPH0721638B2 (ja) 1995-03-08

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