KR870007573A - Manufacturing method using ITO / n-Si solar cell and electron beam heating method - Google Patents

Manufacturing method using ITO / n-Si solar cell and electron beam heating method Download PDF

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Publication number
KR870007573A
KR870007573A KR1019860000668A KR860000668A KR870007573A KR 870007573 A KR870007573 A KR 870007573A KR 1019860000668 A KR1019860000668 A KR 1019860000668A KR 860000668 A KR860000668 A KR 860000668A KR 870007573 A KR870007573 A KR 870007573A
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South Korea
Prior art keywords
ito
solar cell
electron beam
manufacturing
beam heating
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KR1019860000668A
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Korean (ko)
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KR880002130B1 (en
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최규만
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삼성전관 주식회사
정재은
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Priority to KR1019860000668A priority Critical patent/KR880002130B1/en
Publication of KR870007573A publication Critical patent/KR870007573A/en
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Publication of KR880002130B1 publication Critical patent/KR880002130B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

내용 없음No content

Description

ITO/n-Si 태양 전지와 전자선 가열법을 이용한 그 제조 방법Manufacturing method using ITO / n-Si solar cell and electron beam heating method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 1 도는 본 발명에서 사용되는 전자선 가열장치의 구조를 나타낸 도면.1 is a view showing the structure of the electron beam heating apparatus used in the present invention.

제 2 도는 ITO/n-Si 태양 전지의 제조 공정도.2 is a manufacturing process diagram of an ITO / n-Si solar cell.

제 3a도는 본 발명에 따른 태양전지의 구조도.Figure 3a is a structural diagram of a solar cell according to the present invention.

제 3b도는 종래의 태양 전지 구조도.3b is a conventional solar cell structure diagram.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

a : 히터 b : 기판 c : 셔터a: heater b: substrate c: shutter

d : 마그네트 e : 필라멘트 가, 마 : 금속전극d: magnet e: filament Ga, e: metal electrode

나 : n-Si 기판 다 : 절연층 라 : ITOB: n-Si substrate c: insulating layer d: ITO

Claims (2)

n형 Si 기판(가)의 하면에 금속전극(가)이 증착되어 있으며, 상기한 기판(가)의 상면에는 SiO2의 절연층(다) 및 ITO 막(라)이 적층구조로 증착되어 있고, ITO 막(라)의 상면에 그리드 형태의 금속전극 (마)이 증착되어 구성된 것을 특징으로 하는 ITO/n-Si 태양전지.A metal electrode (A) is deposited on the bottom surface of the n-type Si substrate, and an insulating layer (C) and an ITO film (D) of SiO 2 are deposited on the top surface of the substrate (A). The ITO / n-Si solar cell, characterized in that the grid-shaped metal electrode (e) is deposited on the upper surface of the ITO film (D). 세척된 n형 Si 웨이퍼(나)를 대기중 500℃에서 5분간 산화하여 SiO2의 절연층(다)을 형성하는 단계와, ITO 증기류와 웨이퍼의 수선과의 각도(θ)를 약 50°로 하여 상기 절연층(다)위에 1000Å의 ITO막(라)을 형성하는 단계와,Oxidizing the washed n-type Si wafer (b) at 500 ° C. for 5 minutes to form an insulating layer (Si) of SiO 2 , and reducing the angle (θ) between the ITO vapor flow and the repair of the wafer by about 50 °. Forming an ITO film (d) of 1000 mV on the insulating layer (C); 상기한 ITO 막(라)을 대기중 300℃에서 30분간 열처리하는 단계와,Heat-treating the ITO membrane (d) at 300 ° C. for 30 minutes in air; 상기한 공정에서 얻어진 시료의 상하면에 금속 전극(가)(마)을 각각 10,000Å씩 증착하는 단계로 이루어짐을 특징으로 하는 전자선 가열법을 이용한 ITO/n-Si 태양전지의 제조방법.A method of manufacturing an ITO / n-Si solar cell using an electron beam heating method, comprising depositing 10,000 Å each of a metal electrode (a) on the upper and lower surfaces of a sample obtained in the above process. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019860000668A 1986-01-31 1986-01-31 Ito/n-si solar cell and its manufacturing method using electric heater KR880002130B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019860000668A KR880002130B1 (en) 1986-01-31 1986-01-31 Ito/n-si solar cell and its manufacturing method using electric heater

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019860000668A KR880002130B1 (en) 1986-01-31 1986-01-31 Ito/n-si solar cell and its manufacturing method using electric heater

Publications (2)

Publication Number Publication Date
KR870007573A true KR870007573A (en) 1987-08-20
KR880002130B1 KR880002130B1 (en) 1988-10-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860000668A KR880002130B1 (en) 1986-01-31 1986-01-31 Ito/n-si solar cell and its manufacturing method using electric heater

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Publication number Publication date
KR880002130B1 (en) 1988-10-15

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