KR860007343A - 유전성 조성물 - Google Patents

유전성 조성물 Download PDF

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Publication number
KR860007343A
KR860007343A KR1019860002160A KR860002160A KR860007343A KR 860007343 A KR860007343 A KR 860007343A KR 1019860002160 A KR1019860002160 A KR 1019860002160A KR 860002160 A KR860002160 A KR 860002160A KR 860007343 A KR860007343 A KR 860007343A
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KR
South Korea
Prior art keywords
layer
composition
firing
volume
glass
Prior art date
Application number
KR1019860002160A
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English (en)
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KR940005416B1 (ko
Inventor
리차아드 렐리크 조지프
Original Assignee
이 아이 듀우판 디 네모아 앤드 캄파니
도늘드 에이 호우즈
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 이 아이 듀우판 디 네모아 앤드 캄파니, 도늘드 에이 호우즈 filed Critical 이 아이 듀우판 디 네모아 앤드 캄파니
Publication of KR860007343A publication Critical patent/KR860007343A/ko
Application granted granted Critical
Publication of KR940005416B1 publication Critical patent/KR940005416B1/ko

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/102—Glass compositions containing silica with 40% to 90% silica, by weight containing lead
    • C03C3/108—Glass compositions containing silica with 40% to 90% silica, by weight containing lead containing boron
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49163—Manufacturing circuit on or in base with sintering of base

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Inorganic Insulating Materials (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Glass Compositions (AREA)

Abstract

내용 없음

Description

유전성 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (5)

  1. 다음 조성으로 된 미세고체분말의 분산물인 주조 가능한 유전성 조성물.
    a. 500℃이상의 연화점(softening point, TS) 및 825-1025℃에서 1×106포이즈 이하의 점도를 가진 비결정성 유리 40 내지 70 용량%,
    b. 1 내지 59용량%의 Al2O3및 59 내지 1 용량%의-석영, CaZrO3, 응용실리카, 코디에라이트, 물라이트 및 이들 혼합물중에서 선택한 제2 내화성 물질로(최대량의-석영 CaZrO3또는 용융실리카는 총 무기고체기준 20용량%) 이루어진 내화성 산화물의 혼합물 60 내지 30 용량%. (이들은 다음 c의 용액에 용해되어 있음)
    c. 다음 d 중에 용해되어 있으며, 폴리(-메틸스티렌), 및 다음 일반식의 메타크릴레이트 중합체 중에서 선택한 중합성 결합체.
    위 식에서, R은 -H 또는에서 선택된 것이고, R1, R2및 R3는 각각 수소, 알킬, 아르알킬 및 알크아릴 중에서 선택된 것이고 이들 중 하나까지만이 수소를 나타냄. (임의의 가소제를 포함하는, 상기 중합체의 유리 전환온도(glass transition temperature)는 -30 내지 +20℃이고, 중합성 결합제 및 가소제의 양은 고체 a, b 및 c의 30 내지 55 용량%).
    d. 휘발성 비수성 유기용매
  2. 제1항에 있어서, 비결정성 유리가 납, 칼슘, 알루미늄 붕규산 유리(borosilicate glass)인 조성물.
  3. 제2항에 있어서, 비결정성 유리가 56.5중량%의 SiO2, 17.2중량%의 PbO2, 9.1중량%의 Al2O3, 8.6중량%의 CaO, 4.5중량%의 B2O3, 2.4중량%의 Na2O 및 1.7중량%의 K2O로 이루어진 조성물인 방법.
  4. 유연한 기질상에 청구범위 1항의 분산물의 박층을 케스팅(casting)한 후, 그 케스팅층을 가열하여 휘발성 유기용매를 제거하여, 유전성 그린테이프를 형성시키는 방법.
  5. 다음 과정에 따라 상호 연결 다층 구성물을 형성시키는 방법.
    a. 불황성 세라믹 기질상에 후도 필름 전도성 조성물의 조형층을 인쇄 및 소성시키고 ;
    b. 하나 또는 그이상의 그린테이프(청구범위 4항에서 만든 것)에 비아스(vias)의 조형배열을 형성시키고
    c. 과정 a의 조립물의 인쇄된 부면상에, 비아스를 함유한 과정 b의 그린테이프층을 적층시키고, 825 내지 1025℃에서 조립물을 소성하여 고밀도화 유전성층을 형성시키고；
    d. 후도 필름 전도성 조성물로, 고밀도화 유전성층중의 비아스를 충전하고 조립물을 소성하며；
    e. 과정 d의 소성 조립물상에 하나 이상의 조형된 후도 필름 기능청을 인쇄 및 소성하고；
    f. 과정 b 내지 e를 충분한 시간으로 반복하여, 각층이 고밀도화 유전성층에 의해 분리되고 상호연결기능화된 에정수의 다층을 구성한다.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860002160A 1985-03-25 1986-03-24 유전성 조성물 KR940005416B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US715970 1976-08-20
US715,970 1976-08-20
US06/715,970 US4655864A (en) 1985-03-25 1985-03-25 Dielectric compositions and method of forming a multilayer interconnection using same

Publications (2)

Publication Number Publication Date
KR860007343A true KR860007343A (ko) 1986-10-10
KR940005416B1 KR940005416B1 (ko) 1994-06-18

Family

ID=24876202

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860002160A KR940005416B1 (ko) 1985-03-25 1986-03-24 유전성 조성물

Country Status (9)

Country Link
US (1) US4655864A (ko)
EP (1) EP0196036B1 (ko)
JP (1) JPH0697566B2 (ko)
KR (1) KR940005416B1 (ko)
CN (1) CN1014883B (ko)
CA (1) CA1271026A (ko)
DE (1) DE3683384D1 (ko)
DK (1) DK162128C (ko)
GR (1) GR860769B (ko)

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Also Published As

Publication number Publication date
DE3683384D1 (de) 1992-02-27
JPH0697566B2 (ja) 1994-11-30
EP0196036A3 (en) 1988-08-24
US4655864A (en) 1987-04-07
EP0196036A2 (en) 1986-10-01
DK135186D0 (da) 1986-03-24
CN86101910A (zh) 1986-10-01
GR860769B (en) 1986-07-21
JPS61220204A (ja) 1986-09-30
CA1271026A (en) 1990-07-03
DK135186A (da) 1986-09-26
DK162128B (da) 1991-09-16
EP0196036B1 (en) 1992-01-15
KR940005416B1 (ko) 1994-06-18
CN1014883B (zh) 1991-11-27
DK162128C (da) 1992-02-17

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