KR860002088A - 광(光)디스크 메모리 - Google Patents

광(光)디스크 메모리 Download PDF

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KR860002088A
KR860002088A KR1019850005874A KR850005874A KR860002088A KR 860002088 A KR860002088 A KR 860002088A KR 1019850005874 A KR1019850005874 A KR 1019850005874A KR 850005874 A KR850005874 A KR 850005874A KR 860002088 A KR860002088 A KR 860002088A
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quot
optical memory
recording film
substrate
light
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KR1019850005874A
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KR890004230B1 (ko
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다까시 다까오까 (외 1)
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사바쇼오이찌 (외 1)
가부시끼가이샤 도오시바
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Priority claimed from JP59211964A external-priority patent/JPS6190341A/ja
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    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
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    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
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  • Thermal Transfer Or Thermal Recording In General (AREA)

Abstract

내용 없음

Description

광(光) 디스크 메모리
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도, 제2도 및 제3도는 본 발명에 따른 서로 상이한 광 디스크 메모리의 부분단면도.
* 도면의 주요부분에 대한 부호의 설명
16, 16′,16″: 투명기판, 18 : 홈
20, 20, 20″ : 기록막(기록층) 24, 24′,24″: 유전체
26, 26′, 26″: 보호막 28, 30 : 금속막
32 : 침진실 34 : 지지부개
36 : 모우터 38, 40, 42 : 가열기
44 : 전원 46 : 진공펌프
48, 50 : 반도체레이저다이오드 52, 54, 66, 68, 70 : 렌즈
56, 60 : 거울 62 : 분극분배기
64 : 분극판 72 : 검출기

Claims (33)

  1. 기판과 기록막으로 이루어진 광메모리에 있어서, 화학적으로 안정한 유전체(24, 24′,24″)와 광선에 의해 광반사율이 변화될 수 있는 반도체물질(22, 22′,22″)로 형성되어진 기판(16, 16′,16″)위에 기록막 (20, 20′,20″)이 형성되어 있는 것을 특징으로 하는 광메모리.
  2. 제1항에 있어서, 반도체물질(22, 22′,22″)은 그 체적함유율이 40% 이상인 것으로 됨을 특징으로 하는 광메모리.
  3. 제1항에 있어서, 기록막(20, 20′,20″)의 광두께는 투사되는 광선파장에 비하여 약 1/2정도에 못미치는 광두께를 갖도록 된 것을 특징으로 하는 광메모리.
  4. 제1항에 있어서, 기판(16, 16′,16″)은 투명한 디스크 형태로 된것을 특징으로 하는 광메모리.
  5. 제4항에 있어서, 투명한 디스크는 광추적을 하기위하여 흠(18)이 형성되어져 있는 것을 특징으로 하는 광메모리.
  6. 제1항에 있어서, 반도체물질(22, 22′,22″)은 광선에 의하여 비결정구조 또는 결정성 구조로 상변화가 일어나도록 된 것을 특징으로 하는 광메모리.
  7. 제6항에 있어서 광선은 레이저광선임을 특징으로 하는 광메모리.
  8. 제6항에 있어서, 상변화는 레이저광선에 노출된 시간과 출력밀도에 따라 일어남을 특징으로 하는 광메모리.
  9. 제1항에 있어서의 기록막(20,20′)위에는 기록막(20, 20′)에 투사되는 광선이 금속막(28, 28′)에 의하여 반사되도록 금속막(28, 28′)이 형성된 것임을 특징으로 하는 광메모리.
  10. 제9항에 있어서, 금속막(28, 28′)은 금·은·구리 및 알루미늄으로 된 박막임을 특징으로하는 광매로리.
  11. 제1항에 있어서, 반도체물질(22, 22′,22″)은 게트마늄(Ge), 텔루르(Te), 안티몬화인듐(InSb)중 적어도 하나의 물질로 이루어진것을 특징으로하는 광메모리.
  12. 제1항에 있어서, 유전체물질(22, 22′,22″)은 셀렌(Se), 산화규소(SiO), 산화붕소(B2O3), 산화안티몬(Sb2O3), 산화비스무트(Bi2B3), 산화납(Pbo), 산화규소(SiO2) 및 산화탄탈(Ta2O5)중 적어도 하나의 물질로 이루어진것임을 특징으로 하는 광메모리.
  13. 제1항에 있어서, 유전체물질(24, 24′,24″)은 플루오르화비스무트(BiF3), 플루오르화리튬(LiF3), 플루오르화납(PbF2), 플루오르화마그네슘(MgF2), 플루오르화바륨(BaF2) 및 플루오르화칼슘(CaF3)중 적어도 하나의 물질로 이루어진것임을 특징으로 하는 광메모리.
  14. 제1항에 있어서, 기판(16, 16′,16″)위에 형성된 기록막 (20, 20′,20″)은 높은 진공상태와 낮은 압력조건으로 유전체(24, 24′,24″)와 반도체물질(22, 22′,22″)을 공동스팻터링에 의해 기판(22, 22′,2,2″)위에 형성시켜서된 것임을 특징으로하는 광메모리.
  15. 기판과 기록막으로 이루어진 광메모리에 있어서, 화학적으로 안정한 유전체(24′,24″)와 광선에 의하여 광반사율이 변화될 수 있는 반도체물질(22′, 22″)로 이루어진 기판(16′,16″)위에 형성된기록막(20′,20″)과, 상기 기록막(20′,20″)을 통과하는 광선이 금속막(28′,28″)에 의하여 반사되도록 기록막(20′,20″)위에 형성된 금속막(28′,28″) 및 상기 금속막(28,28')위에 형성된 보호막(26′,28″)으로 이루어진것을 특징으로하는 광메모리.
  16. 제15항에 있어서, 반도체물질(22′,22″)은 광선에 의하여 비결정구조 또는 결정성구조로 상변화가 일어나도록 된 것을 특징으로 하는 광메모리.
  17. 제15항에 있어서, 광선은 레미저광선(t)인 것임을 특징으로하는 광메모리.
  18. 제16항에 있어서, 상변하는 레이저광선(t)에 노출된시간과 출력밀도에 따라 이루어짐을 특징으로하는 광메모리.
  19. 제15항에 있어서, 반사성금속막(28,28′)은 Cu로 이루어진 것임을 특징으로하는 광메모리.
  20. 제15항에 있어서, 기판(16′,16″)위에 형성된 기록막(20′,20″)은 높은 진공상태와 낮은 압력조건으로 유전체(24′,24″)와 반도체물질(22′,22″)로 공동 스펏터링에 의해 기판(16′,16″)위체 형성시켜서 된 것임을 특징으로하는 광메모리.
  21. 기판과 기록막으로 이루어진 광메모리에 있어서, 기판(16″)위에 반투명 금속막(30)이 형성되어있고, 상기 기판(16″)위에는 화학적으로 안정한 유전체(24″)와 광선에 의하여 광반사율이 변화될 수 있는 반도체물질(22″)로 이루어진 기록막(20″)이 형성되어 있으며, 상기 기록막(20″)위에는 이 기록막(28″)를 통과하는 광선이 금속막(28′)에 의해 반사되도록 형성된 반사성 금속막(28′)으로 이루어진 것을 특징으로하는 광메모리.
  22. 제21항에 있어서, 반사성금속막(28′)위에는 보호막(26′)이 형성되어 있는것을 특징으로 하는 광메모리.
  23. 제21항에 있어서, 반도체물질(22″)은 광선에 의하여 비결정성구조 또는 결정성구조로 상변화가 일어나도록된 것을 특징으로하는 광메모리.
  24. 제23항에 있어서, 광선은 레이저광선(L)인것을 특징으로하는 광메모리.
  25. 제23항에 있어서, 상변화는 레이저광선(L)에 대한 노출시간과 출력밀도에 따라 일어나는 것임을 특징으로하는 메모리.
  26. 제21항에 있어서, 반투명금속막(30)은 금, 은, 구리, 알루미늄 중에서 적어도 하나의 물질로 형성 되어지되 0.03㎛ 이하의 두께로 이루어진것임을 특징으로하는 광메모리.
  27. 제21항에 있어서, 기록막(20″)은 기판위에 형성된 기록막(20″)은 높은 진공상태와 저압력하에서 융전체(24″)와 반도체물질(22″)을 공동시펏터링 또는 공동 증착에의해 기판(16″)위에 형성시켜서 된것임을 특징으로하는 광메모리.
  28. 정보를 저장하고 검색하는 벙법에 있어서, (가) 기록막(20, 20′,20″)을 화학적으로 안정한 유전체(24, 24′,24″)와 광선에 의하여 광반사율이 변화될 수 있는 반도체물질(22, 22′,22″)로 형성시키고, (나)상기 기록막의 선택된 부위에서 반도체물질이 최초의 구조적 변화를 일으키도록 광선을 적용시키고 이 때 광반사율도 변화시키는 단계로 정보를 저장하고 검색하는 방법.
  29. 제28항에 있어서, 단계 (나)후에 상기 기록막(20, 20′,20″)의 선택된 부위에 상기의 구조적인 변화를 광학적으로 검색하는 단계를 거치는 것을 특징으로하는 방법.
  30. 제28항에 있어서, 메모리의 기록막(20, 20′,20″)은 투명한 디스크(16, 16′,16″)로 형성된것을 특징으로하는 방법.
  31. 제28항에 있어서, 메모리의 기록막(20, 20′,20″)은 구조적 변화를 일으키기에는 충분하지만 기록막(20, 20′,20″)상에 홈을 형성하기에는 불충분한 출력밀도하에서 레이저광선을 조사시켜서 광반사율을 변화시킬 수 있도록된 것을 특징으로하는 방법.
  32. 제28항에 있어서, 단계 (나)후에 반도체물질(22, 22′,22″)내에서 두번째 구조적인 변화가 발생하는 부위체 레이저광선을 재조사시키는 단계를 거치는 것을 특징으로하는 방법.
  33. 광메모리인자를 제조하는 방법에 있어서, 유전체와 광선에 의하여 광반사율을 변화시킬 수 있는 반도체물질을 포함하는 기록막(20, 20′,20″)을 기판(16, 16′,16″)위에 형성시키기 위하여 기판(16, 16′,16″)상에서, 높은 진공상태와 낮은 압력상태로 반도체물질과 유전체물질을 공동증발단계와 공동스펏터링하는 단계를 거쳐 광메모리 인자를 제조하는 것을 특징으로하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019850005874A 1984-08-24 1985-08-14 광(光) 디스크 메모리 KR890004230B1 (ko)

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DE3580429D1 (de) 1990-12-13
US4969141A (en) 1990-11-06

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